Page 1
May 2009
FDMS3662 N-Channel Power Trench
FDMS3662
N-Channel Power Trench® MOSFET
100V, 49A, 14.8m:
Features
Max r
Advanced Package and Silicon combination for low r
MSL1 robust package design
100% UIL Tested
RoHS Compliant
= 14.8m: at VGS = 10V, ID = 8.9A
DS(on)
Top
Power 56
DS(on)
Bottom
S
S
D
D
D
D
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
®
process that has
Application
DC - DC Conversion
S
Pin 1
G
5
D
6
D
7
D
8
D
G
4
S
3
S
2
1
S
tm
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Thermal Characteristics
R
TJC
R
TJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS3662 FDMS3662 Power 56 13’’ 12mm 3000 units
©2009 Fairchild Semiconductor Corporation
FDMS3662 Rev.C
Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC= 25°C 49
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 90
Single Pulse Avalanche Energy (Note 3) 384 mJ
Power Dissipation TC = 25°C 104
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Case 1.2
Thermal Resistance, Junction to Ambient (Note 1a) 50
1
= 25°C unless otherwise noted
A
= 25°C 57
C
= 25°C (Note 1a) 8.9
A
= 25°C (Note 1a) 2.5
A
1
A
W
°C/W
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Page 2
FDMS3662 N-Channel Power Trench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
'BV
'T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250PA, VGS = 0V 100 V
Breakdown Voltage Temperature
Coefficient
= 250PA, referenced to 25°C 74 mV/°C
I
D
Zero Gate Voltage Drain Current VGS= 0V, VDS = 80V, 1 PA
Gate to Source Leakage Current VGS = ±20V, VDS= 0V ±100 nA
On Characteristics
V
GS(th)
'V
'T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250PA 2.5 3.5 4.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
= 250PA, referenced to 25°C -10.8 mV/°C
I
D
V
= 10V, ID = 8.9A 11.4 14.8
GS
= 10V, ID = 8.9A, TJ = 125°C 19.0 24.7
V
GS
Forward Transconductance VDD = 10V, ID = 8.9A 37 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 245 325 pF
Reverse Transfer Capacitance 110 165 pF
= 50V, VGS = 0V,
V
DS
f = 1MHz
Gate Resistance f = 1MHz 1.4 :
3470 4620 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Turn-On Delay Time
Rise Time 15 26 ns
Turn-Off Delay Time 32 52 ns
= 50V, ID = 8.9A,
V
DD
V
= 10V, R
GS
GEN
= 6:
Fall Time 610ns
g
gs
gd
Total Gate Charge at 10V
Gate to Source Charge 18 nC
Gate to Drain “Miller” Charge 15 nC
V
DD
I
D
= 50V,
= 8.9A
25 40 ns
54 75 nC
m:
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
TJA
the user's board design.
2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
3. Starting T
©2009 Fairchild Semiconductor Corporation
FDMS3662 Rev.C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 71 115 nC
= 25°C, L = 3mH, IAS = 16A, VDD = 100V, VGS = 10V
J
1
V
= 0V, IS= 8.9A (Note 2) 0.8 1.3 V
GS
= 0V, IS= 2.1A (Note 2) 0.7 1.2
V
GS
= 8.9A, di/dt = 100A/Ps
I
F
a. 50°C/W when mounted on a
2
pad of 2 oz copper.
1 in
2
45 73 ns
is guaranteed by design while R
TJC
b. 125°C/W when mounted on a
minimum pad of 2 oz copper.
is determined by
TCA
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Page 3
FDMS3662 N-Channel Power Trench
Typical Characteristics T
90
VGS = 10V
VGS = 8V
60
30
, DRAIN CURRENT (A)
D
I
0
01234
Figure 1.
2.2
ID = 8.9A
2.0
V
= 10V
GS
1.8
1.6
1.4
1.2
1.0
NORMALIZED
0.8
0.6
DRAIN TO SOURCE ON-RESISTANCE
0.4
-75 -50 -25 0 25 50 75 100 125 150
VGS = 7V
PULSE DURATION = 300Ps
DUTY CYCLE = 2%MAX
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
On-Region Characteristics Figure 2.
T
, JUNCTION TEMPERATURE (
J
= 25°C unless otherwise noted
J
VGS = 6.5V
VGS = 6V
o
C)
2.5
VGS = 6V
2.0
1.5
NORMALIZED
PULSE DURATION = 300Ps
DUTY CYCLE = 2%MAX
VGS = 6.5V
VGS= 7V
1.0
V
=8V
GS
DRAIN TO SOURCE ON-RESISTANCE
0.5
0306090
I
, DRAIN CURRENT(A)
D
VGS=10V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
40
PULSE DURATION = 300Ps
(m:)
30
20
DRAIN TO
,
DS(on)
r
10
SOURCE ON-RESISTANCE
0
46810
V
, GATE TO SOURCE VOLTAGE (V)
GS
DUTY CYCLE = 2%MAX
ID= 8.9A
TJ= 125oC
TJ= 25oC
®
MOSFET
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
vs Junction Temperature
90
PULSE DURATION = 300Ps
DUTY CYCLE = 2%MAX
V
= 10V
DS
60
TJ= 150oC
30
, DRAIN CURRENT (A)
D
I
0
345678
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
©2009 Fairchild Semiconductor Corporation
FDMS3662 Rev.C
1
TJ = 25oC
TJ = -55oC
Figure 4.
O n - R es i s t a n c e vs G a t e t o
Source Voltage
90
V
= 0V
GS
10
TJ= 150oC
1
TJ = 25oC
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
S o u r ce t o D r a i n Di o d e
TJ = -55oC
Forward Voltage vs Source Current
3
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Page 4
FDMS3662 N-Channel Power Trench
Typical Characteristics T
10
V
= 25V
DD
TJ= 125oC
VDD = 50V
ID= 8.9A
8
6
4
2
, GATE TO SOURCE VOLTAGE(V)
GS
V
0
0204060
Figure 7.
Qg, GATE CHARGE(nC)
Gate Charge Characteristics Figure 8.
20
10
, AVALANCHE CURRENT(A)
AS
I
1
0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE(ms)
Figure 9.
U n c l a m p e d I n d u c t i v e
Switching Capability
= 25°C unless otherwise noted
J
VDD = 75V
TJ= 25oC
400
10000
C
iss
1000
100
CAPACITANCE (pF)
f = 1MHz
V
= 0V
GS
10
0.1 1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
oss
C
rss
C a p a c i t a n c e v s D r a i n
to Source Voltage
60
R
TJC
VGS= 10V
= 1.2oC/W
o
C)
40
Limited by Package
20
, DRAIN CURRENT (A)
D
I
0
25 50 75 100 125 150
T
, Ambient TEMPERATURE (
A
Figure 10.
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
®
MOSFET
100
10
1
THIS AREA IS
LIMITED BY r
, DRAIN CURRENT (A)
D
0.1
I
0.01
0.01 0.1 1 10 100
DS(on)
SINGLE PULSE
T
= MAX RATED
J
R
= 125oC/W
TJA
= 25oC
T
A
VDS, DRAIN to SOURCE VOLTAGE (V)
F ig u re 1 1. F or w ar d B ia s Sa f e
Operating Area
©2009 Fairchild Semiconductor Corporation
FDMS3662 Rev.C
1
1ms
10ms
100ms
1s
10s
DC
400
2000
1000
100
VGS = 10V
SINGLE PULSE
= 125oC/W
R
TJA
= 25oC
T
A
10
), PEAK TRANSIENT POWER (W)
1
PK
P(
0.5
10-310
-2
Figure 12.
-1
10
t, PULSE WIDTH (s)
110
100 1000
S i n g l e P u l s e M a x i m u m
Power Dissipation
4
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Page 5
FDMS3662 N-Channel Power Trench
Typical Characteristics T
2
1
TJA
0.1
Z
0.01
IMPEDANCE,
NORMALIZED THERMAL
1E-3
5E-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
-3
10
10
SINGLE PULSE
R
TJA
-2
= 25°C unless otherwise noted
J
NOTES:
DUTY FACTOR: D = t
= 125oC/W
-1
10
t, RECTANGULAR PULSE DURATION (sec)
110
PEAK TJ = PDM x Z
Figure 13. Transient Thermal Response Curve
P
DM
t
1
t
2
1/t2
x R
+ T
TJA
TJA
A
100 1000
®
MOSFET
©2009 Fairchild Semiconductor Corporation
FDMS3662 Rev.C
1
5
www.fairchildsemi.com
Page 6
Dimensional Outline and Pad Layout
FDMS3662 N-Channel Power Trench
®
MOSFET
©2009 Fairchild Semiconductor Corporation
FDMS3662 Rev.C
1
6
www.fairchildsemi.com
Page 7
TRADEMARKS
t
®
m
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
EfficentMax™
EZSWITCH™ *
™*
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™
®
m
®
®
®
®
*
®
F-PFS™
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
tm
PDP SPM™
Power-SPM™
®
SM
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
®
®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®
®
™
®
The Power Franchise
TinyBoost™
TinyBuck™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
®
t
®
®
PSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
®*
XS™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDMS3662 N-Channel Power Trench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
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committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I40
©2009 Fairchild Semiconductor Corporation
FDMS3662 Rev.C
1
www.fairchildsemi.com
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