Page 1
May 2009
FDMS3500 N-Channel Power Trench
FDMS3500
N-Channel Power Trench® MOSFET
75V, 49A, 14.5m:
Features
Max r
Max r
Advanced Package and Silicon combination for low r
MSL1 robust package design
100% UIL Tested
RoHS Compliant
= 14.5m: at VGS = 10V, ID = 11.5A
DS(on)
= 16.3m: at VGS = 4.5V, ID = 10A
DS(on)
Top
Power 56
DS(on)
Bottom
S
S
D
D
D
D
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
®
process that has
Application
DC - DC Conversion
S
Pin 1
G
5
D
6
D
7
D
8
D
G
4
S
3
S
2
1
S
tm
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Thermal Characteristics
R
TJC
R
TJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS3500 FDMS3500 Power 56 13’’ 12mm 3000 units
©2009 Fairchild Semiconductor Corporation
FDMS3500 Rev.C
Drain to Source Voltage 75 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC= 25°C 49
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 100
Single Pulse Avalanche Energy (Note 3) 384 mJ
Power Dissipation TC = 25°C 96
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Case 1.3
Thermal Resistance, Junction to Ambient (Note 1a) 50
1
= 25°C unless otherwise noted
A
= 25°C 57
C
= 25°C (Note 1a) 9.2
A
= 25°C (Note 1a) 2.5
A
1
A
W
°C/W
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Page 2
FDMS3500 N-Channel Power Trench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
'BV
'T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250PA, VGS = 0V 75 V
Breakdown Voltage Temperature
Coefficient
I
= 250PA, referenced to 25°C 71 mV/°C
D
Zero Gate Voltage Drain Current VGS= 0V, VDS = 60V, 1 PA
Gate to Source Leakage Current VGS = ±20V, VDS= 0V ±100 nA
On Characteristics
V
GS(th)
'V
'T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250PA 1.0 1.8 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
= 250PA, referenced to 25°C -6.8 mV/°C
I
D
V
= 10V, ID = 11.5A 11.1 14.5
GS
= 4.5V, ID = 10A 12.8 16.3
GS
= 10V, ID = 11.5A, TJ = 125°C 17.6 23.0
V
GS
Forward Transconductance VDD = 5V, ID = 11.5A 56 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 225 300 pF
Reverse Transfer Capacitance 120 175 pF
V
= 40V, VGS = 0V,
DS
f = 1MHz
3580 4765 pF
Gate Resistance f = 1MHz 1.2 :
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
Turn-On Delay Time
Rise Time 918ns
Turn-Off Delay Time 48 77 ns
V
= 40V, ID = 11.5A,
DD
= 10V, R
V
GS
GEN
= 6:
Fall Time 611ns
g
g
gs
gd
Total Gate Charge VGS= 0 V t o 1 0 V
Total Gate Charge VGS = 0V to 5V 34 48 nC
Gate to Source Charge 9.9 nC
V
DD
I
D
= 40V,
= 11.5A
Gate to Drain “Miller” Charge 11.6 nC
16 29 ns
65 91 nC
m:V
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
TJA
the user's board design.
2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
3. Starting T
©2009 Fairchild Semiconductor Corporation
FDMS3500 Rev.C1
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 45 72 nC
= 25°C, L = 3mH, IAS = 16A, VDD = 75V, VGS = 10V
J
V
GS
V
GS
= 11.5A, di/dt = 100A/Ps
I
F
a. 50°C/W when mounted on a
2
pad of 2 oz copper.
1 in
= 0V, IS= 11.5A (Note 2) 0.8 1.3
= 0V, IS= 2.1A (Note 2) 0.7 1.2
38 60 ns
is guaranteed by design while R
TJC
b. 125°C/W when mounted on a
minimum pad of 2 oz copper.
2
TCA
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V
is determined by
Page 3
FDMS3500 N-Channel Power Trench
Typical Characteristics T
100
VGS = 10V
80
VGS = 4.5V
60
40
, DRAIN CURRENT (A)
20
D
I
0
0123
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance
2.0
ID = 11.5A
1.8
V
= 10V
GS
1.6
1.4
1.2
NORMALIZED
1.0
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-75 -50 -25 0 25 50 75 100 125 150
T
, JUNCTION TEMPERATURE (
J
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
vs Junction Temperature
VGS = 4V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
= 25°C unless otherwise noted
J
VGS = 3.5V
VGS = 3V
o
C)
3.0
VGS = 3V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
2.5
2.0
VGS = 3.5V
V
= 4V
V
GS
GS
=4.5V
V
= 10V
GS
1.5
NORMALIZED
1.0
DRAIN TO SOURCE ON-RESISTANCE
0.5
020406080100
I
, DRAIN CURRENT(A)
D
vs Drain Current and Gate Voltage
40
(m:)
30
20
DRAIN TO
,
DS(on)
r
10
SOURCE ON-RESISTANCE
0
246810
ID= 11.5A
V
, GATE TO SOURCE VOLTAGE (V)
GS
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
TJ= 125oC
TJ= 25oC
F i g u re 4 . O n - R e si s t a n c e v s Ga t e t o
Source Voltage
®
MOSFET
100
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
80
V
= 5V
DS
60
TJ= 150oC
40
, DRAIN CURRENT (A)
20
D
I
0
012345
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode
©2009 Fairchild Semiconductor Corporation
FDMS3500 Rev.C
1
TJ = 25oC
TJ = -55oC
100
V
= 0V
GS
10
TJ= 150oC
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
TJ = 25oC
TJ = -55oC
Forward Voltage vs Source Current
3
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Page 4
FDMS3500 N-Channel Power Trench
Typical Characteristics T
10
ID= 11.5A
8
VDD = 40V
6
VDD = 30V
4
2
, GATE TO SOURCE VOLTAGE(V)
GS
V
0
0 10203040506070
Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain
20
10
, AVALANCHE CURRENT(A)
AS
I
1
0.01 0.1 1 10 100
F i g u r e 9 . U n c l a m p e d I n d u c t i v e
Qg, GATE CHARGE(nC)
TJ= 125oC
tAV, TI ME IN AVALANCHE (ms)
Switching Capability
= 25°C unless otherwise noted
J
V
= 50V
DD
TJ= 25oC
400
10000
C
1000
C
CAPACITANCE (pF)
100
f = 1MHz
V
= 0V
GS
30
0.1 1 10
VDS, DRAIN TO SOURCE VOLT AGE (V)
C
to Source Voltage
60
50
40
Limited by Package
VGS= 10V
30
VGS= 4.5V
20
, DRAIN CURRENT (A)
D
I
10
R
= 1.3oC/W
0
25 50 75 100 125 150
T
, CASE TEMPERATURE (
C
TJC
o
C)
F i g u r e 1 0 . M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
iss
oss
rss
75
®
MOSFET
400
THIS AREA IS
100
LIMITED BY r
DS(on)
10
1
SINGLE PULSE
T
, DRAIN CURRENT (A)
D
0.1
I
0.01
0.01 0.1 1 10 100 300
= MAX RATED
J
R
= 125oC/W
TJA
= 25oC
T
A
VDS, DRAIN to SOURCE VOLTAGE (V)
F ig u re 1 1. F or w ar d B ia s Sa f e
Operating Area
©2009 Fairchild Semiconductor Corporation
FDMS3500 Rev.C
1
1ms
10ms
100ms
1s
10s
DC
1000
VGS = 10V
100
SINGLE PULSE
= 125oC/W
R
TJA
= 25oC
T
A
10
), PEAK TRANSIENT POWER (W)
1
PK
P(
0.5
10-310
-2
-1
10
t, PULSE WIDTH ( sec)
110
100 1000
F i g u r e 1 2 . S i n g l e P u l s e M a x i m u m
Power Dissipation
4
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Page 5
FDMS3500 N-Channel Power Trench
Typical Characteristics T
2
1
TJA
Z
0.1
IMPEDANCE,
0.01
NORMALIZED THERMAL
0.001
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
-3
10
10
-2
= 25°C unless otherwise noted
J
SINGLE PULSE
R
= 125oC/W
TJA
-1
10
t, RECTANGULAR PULSE DURATION (sec )
110
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
Figure 13. Transient Thermal Response Curve
P
DM
t
1
t
2
1/t2
x R
+ T
TJA
TJA
A
100 1000
®
MOSFET
©2009 Fairchild Semiconductor Corporation
FDMS3500 Rev.C
1
5
www.fairchildsemi.com
Page 6
Dimensional Outline and Pad Layout
FDMS3500 N-Channel Power Trench
®
MOSFET
©2009 Fairchild Semiconductor Corporation
FDMS3500 Rev.C
1
6
www.fairchildsemi.com
Page 7
TRADEMARKS
t
®
m
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
EfficentMax™
EZSWITCH™ *
™*
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™
®
m
®
®
®
®
*
®
F-PFS™
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
tm
PDP SPM™
Power-SPM™
®
SM
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
®
®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®
®
™
®
The Power Franchise
TinyBoost™
TinyBuck™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
®
t
®
®
PSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
®*
XS™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDMS3500 N-Channel Power Trench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
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committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I40
©2009 Fairchild Semiconductor Corporation
FDMS3500 Rev.C
1
www.fairchildsemi.com
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