Datasheet FDMS3016DC Datasheet (Fairchild)

FDMS3016DC

Bottom Top

Pin 1

D

D

D

D

G

S

S

S

Power 56

G

S

S

S

D
D

D

D

5

6

7

8

3

2

1

4

N-Channel Dual CoolTM PowerTrench® MOSFET

30 V, 49 A, 6.0 mΩ

Features

 Dual CoolTM Top Side Cooling PQFN package
 Max r
 Max r
 High performance technology for extremely low r
 RoHS Compliant

= 6.0 mΩ at VGS = 10 V, ID = 12 A

DS(on)

= 9.0 mΩ at VGS = 4.5 V, ID = 10 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
Advancements in both silicon and Dual Cool
technologies have been combined to offer the lowest r
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.

Applications

 Synchronous Rectifier for DC/DC Converters
 Telecom Secondary Side Rectification
 High End Server/Workstation

July 2010

®

process.

TM

package

DS(on)

FDMS3016DC N-Channel Dual Cool

TM

PowerTrench

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 4) 1.3 V/ns
P

D

, T

T

J

STG

Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 49

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 200
Single Pulse Avalanche Energy (Note 3) 72 mJ

Power Dissipation TC = 25 °C 60
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

A

= 25 °C 78

C

= 25 °C (Note 1a) 18

A

= 25 °C (Note 1a) 3.3

A

Thermal Characteristics

R

θJC

R

θJC

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C

Thermal Resistance, Junction to Case (Top Source) 5.7
Thermal Resistance, Junction to Case (Bottom Drain) 2.1
Thermal Resistance, Junction to Ambient (Note 1a) 38
Thermal Resistance, Junction to Ambient (Note 1b) 81
Thermal Resistance, Junction to Ambient (Note 1i) 16
Thermal Resistance, Junction to Ambient (Note 1j) 23
Thermal Resistance, Junction to Ambient (Note 1k) 11

3016 FDMS3016DC Dual Cool

TM

Power 56 13’’ 12 mm 3000 units

1

®

MOSFET

A

W

°C/W

www.fairchildsemi.com

FDMS3016DC N-Channel Dual Cool

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 17 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 1.9 3.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -6 mV/°C

D

V

= 10 V, ID = 12 A 5.0 6.0

GS

= 4.5 V, ID = 10 A 7.0 9.0

GS

= 10 V, ID = 12 A, TJ = 125 °C 7.5 9.4

V

GS

Forward Transconductance VDS = 5 V, ID = 12 A 44 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 513 685 pF
Reverse Transfer Capacitance 87 135 pF

= 15 V, VGS = 0 V,

V

DS

f = 1 MHz

Gate Resistance 0.9 Ω

1038 1385 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

Turn-On Delay Time
Rise Time 310ns
Turn-Off Delay Time 19 35 ns

= 15 V, ID = 12 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

Fall Time 210ns

g
g
gs
gd

Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 7.6 10.6 nC
Gate to Source Gate Charge 3 nC

V

DD

I

= 12 A

D

= 15 V,

Gate to Drain “Miller” Charge 2.5 nC

918ns

16 23 nC

mΩV

TM

PowerTrench

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 9 18 nC

V

= 0 V, IS = 12 A (Note 2) 0.82 1.3

GS

= 0 V, IS = 1.9 A (Note 2) 0.73 1.2

V

GS

= 12 A, di/dt = 100 A/μs

I

F

2

25 45 ns

V

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Thermal Characteristics

FDMS3016DC N-Channel Dual Cool

R

θJC

R

θJC

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

NOTES:

1. R

is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R

θJA

by the user's board design.

Thermal Resistance, Junction to Case (Top Source) 5.7
Thermal Resistance, Junction to Case (Bottom Drain) 2.1
Thermal Resistance, Junction to Ambient (Note 1a) 38
Thermal Resistance, Junction to Ambient (Note 1b) 81
Thermal Resistance, Junction to Ambient (Note 1c) 27
Thermal Resistance, Junction to Ambient (Note 1d) 34
Thermal Resistance, Junction to Ambient (Note 1e) 16
Thermal Resistance, Junction to Ambient (Note 1f) 19
Thermal Resistance, Junction to Ambient (Note 1g) 26
Thermal Resistance, Junction to Ambient (Note 1h) 61
Thermal Resistance, Junction to Ambient (Note 1i) 16
Thermal Resistance, Junction to Ambient (Note 1j) 23
Thermal Resistance, Junction to Ambient (Note 1k) 11
Thermal Resistance, Junction to Ambient (Note 1l) 13

a. 38 °C/W when mounted on
a 1 in2 pad of 2 oz copper

is guaranteed by design while R

θJC

b. 81 °C/W when mounted on
a minimum pad of 2 oz copper

is determined

θCA

°C/W

TM

PowerTrench

®

MOSFET

c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9x10.4x12.7mm Alumi num He at Si nk, 1 in
j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41 B-11 Heat Sink, 1 in2 pad of 2 oz copper
l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. EAS of 72 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V.

4. ISD ≤ 12 A, di/dt ≤ 100 A/μs, VDD ≤ BV

, Starting TJ = 25 oC.

DSS

2

pad of 2 oz copper

©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C

3

www.fairchildsemi.com

FDMS3016DC N-Channel Dual Cool

Typical Characteristics T

50

VGS = 10V

40

30

20

, DRAIN CURRENT (A)

10

D

I

0

012345

Figure 1.

1.8

ID = 12A
V

1.6

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

VGS = 4.5V

VGS = 4V

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

On-Region Characteristics Figure 2.

= 10V

GS

T

, JUNCTION TEMPERATURE (

J

vs Junction Temperature

= 25°C unless otherwise noted

J

VGS = 3.5V

VGS = 3V

o

C)

6

PULSE DURATION = 80Ps

5

DUTY CYCLE = 0.5%MAX

VGS = 3V

4

VGS = 3.5V

V

V

= 4V

GS

GS

= 4.5V

NORMALIZED

3

2

1

V

=10V

DRAIN TO SOURCE ON-RESISTANCE

0

0 1020304050

I

, DRAIN CURRENT(A)

D

GS

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

50

40

(m:)

30

DRAIN TO

,

20

DS(on)

r

10

SOURCE ON-RESISTANCE

0

TJ= 25oC

246810

V

GS

Figure 4.

O n - R es i s t a n c e vs G a t e t o

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

ID= 12A

TJ= 125oC

, GATE TO SOURCE VOLTAGE (V)

Source Voltage

TM

Power Trench

®

MOSFET

50

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

40

VDS= 5V

30

20

TJ= 150oC

, DRAIN CURRENT (A)

10

D

I

0

12345

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

©2010 Fairchild Semiconductor Corporation

FDMS3016DC Rev.C

TJ= 25oC

TJ= -55oC

50

V

= 0V

GS

10

1

TJ= 150oC

TJ = 25oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = -55oC

Forward Voltage vs Source Current

4

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FDMS3016DC N-Channel Dual Cool

0.01 0.1 1 10 100

0.001

0.01

0.1

1

10

100

500

100 us

DC

100 ms

10 ms

1 ms

1 s

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY r

DS(on)

SINGLE PULSE
T

J

= MAX RATED

R

θJA

= 81

o

C/W

T

A

= 25

o

C

10 s

200

10-410-310-210

-1

110

100 1000

0.5

1

10

100

1000

2000

P

(PK)

, PEAK TRANSIENT POWER (W)

SINGLE PULSE
R

θJA

= 81 oC/W

T

A

= 25 oC

t, PULSE WIDTH (sec)

25 50 75 100 125 150

0

20

40

60

80

V

GS

= 4.5 V

R

θJC

= 2.1 oC/W

V

GS

= 10 V

I

D

, DRAIN CURRENT (A)

T

C

, CASE TEMPERATURE (

o

C)

Limited by package

Typical Characteristics T

10

ID= 12A

8

6

4

2

, GATE TO SOURCE VOLTAGE(V)

GS

V

0

0 3 6 9 12 15 18

Figure 7.

Gate Charge Characteristics Figure 8.

30

10

V

= 10V

DD

Qg, GATE CHARGE(nC)

= 25°C unless otherwise noted

J

VDD = 15V

VDD = 20V

TJ= 25oC

3000

1000

100

CAPACITANCE (pF)

f = 1MHz
V

= 0V

GS

30

0.1 1 10 30

VDS, DRAIN TO SOURCE VOLTAGE (V)

C a p a c i t a n c e v s D r a i n

to Source Voltage

C

iss

C

oss

C

rss

TM

Power Trench

®

MOSFET

TJ= 125oC

, AVALANCHE CURRENT(A)

AS

I

1

0.01 0.1 1 10 100

tAV, TI ME IN AVALANCHE(ms)

Figure 9.

U n c l a m p e d I n d u c t i v e

Switching Capability

©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C

Figure 11. F or wa rd Bias Safe

Operating Area

Figure 10. M a x i m u m C o n t i n u o u s D r a i n

C u r r e n t v s C a s e T e m p e r a t ur e

Figure

12. S i n g l e P u l s e M a x i m u m
Power Dissipation

5

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FDMS3016DC N-Channel Dual Cool

10

-4

10

-3

10

-2

10

-1

110

100 10 00

0.0005

0.001

0.01

0.1

1

2

SINGLE PULSE
R

θJA

= 81 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics T

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

= 25°C unless otherwise noted

J

TM

Power Trench

®

MOSFET

©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C

6

www.fairchildsemi.com

Dimensional Outline and Pad Layout

FDMS3016DC N-Channel Dual Cool

TM

PowerTrench

®

MOSFET

©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C

4

www.fairchildsemi.com

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FDMS3016DC N-Channel Dual Cool

TM

Power Trench

®

MOSFET

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PRODUCT STATUS DEFINITIONS
Definition of Terms

.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

Rev. I48

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