Datasheet FDMS3008SDC Datasheet (Fairchild)

FDMS3008SDC

4
3
2
1

5
6
7
8

S

S

S

G

D
D

D

D

Bottom Top

Pin 1

D

D

D

D

G

S

S

S

Power 56

N-Channel Dual CoolTM PowerTrench® SyncFET

30 V, 49 A, 2.6 mΩ
Features

 Dual CoolTM Top Side Cooling PQFN package
 Max r
 Max r
 High performance technology for extremely low r
 SyncFET Schottky Body Diode
 RoHS Compliant

= 2.6 mΩ at VGS = 10 V, ID = 28 A

DS(on)

= 3.3 mΩ at VGS = 4.5 V, ID = 22 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
Advancements in both silicon and Dual Cool
technologies have been combined to offer the lowest
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance. This device has the
added benefit of an efficient monolithic Schottky body diode.

Applications

 Synchronous Rectifier for DC/DC Converters
 Telecom Secondary Side Rectification
 High End Server/Workstation Vcore Low Side

TM

August 2011

®

process.

TM

package

r

DS(on)

FDMS3008SDC N-Channel Dual Cool

TM

PowerTrench

®

SyncFET

TM

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

dv/dt Peak Diode Recovery dv/d t (Note 5) 2.3 V/ns
P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJC

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

©2011 Fairchild Semiconductor Corporation
FDMS3008SDC Rev.C

Drain to Source Voltage 30 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 49

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 200
Single Pulse Avalanche Energy (Note 3) 112 mJ

Power Dissipation TC = 25 °C 78
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case (Top Source) 3.5
Thermal Resistance, Junction to Case (Bottom Drain) 1.6
Thermal Resistance, Junction to Ambient (Note 1a) 38
Thermal Resistance, Junction to Ambient (Note 1b) 81
Thermal Resistance, Junction to Ambient (Note 1i) 16
Thermal Resistance, Junction to Ambient (Note 1j) 23
Thermal Resistance, Junction to Ambient (Note 1k) 11

3008S FDMS3008SDC Dual Cool

= 25°C unless otherwise noted

A

= 25 °C 140

C

= 25 °C (Note 1a) 29

A

= 25 °C (Note 1a) 3.3

A

TM

Power 56 13’’ 12 mm 3000 units

1

A

W

°C/W

www.fairchildsemi.com

FDMS3008SDC N-Channel Dual Cool

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage I
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current V
Gate to Source Leakage Current, Forward V

= 1 mA, VGS = 0 V30 V

D

I

= 10 mA, referenced to 25°C 13 mV/°C

D

= 24 V, V

DS

= 20 V, V

GS

= 0 V500μA

GS

= 0 V 100nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, I
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance V

I

= 10 mA, referenced to 25°C -5 mV/°C

D

V

= 10 V, ID = 28 A 1.82.6

GS

= 4.5 V, ID = 22 A2.73.3

GS

= 10 V, ID = 28 A, T

V

GS

= 5 V, ID = 28 A 144 S

DS

= 1 mA 1.2 1.9 3.0 V

D

= 125°C 2.4 3.6

J

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 1115 1485 pF
Reverse Transfer Capacitance 80 120 pF
Gate Resistance 0.7 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g
g
gs
gd

Turn-On Delay Time
Rise Time 4.7 10 ns
Turn-Off Delay Time 33 53 ns
Fall Time 310ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 9.6 nC
Gate to Drain “Miller” Charge 4.3 nC

= 15 V, VGS = 0 V,

V

DS

f = 1MHz

= 15 V, ID = 28 A,

V

DD

V

= 10 V, R

GS

= 0 V to 10 V

GS

= 0 V to 4.5 V2129nC

GS

GEN

= 6 Ω

V

DD

I

= 28 A

D

= 15 V,

3400 4520 pF

15 27 ns

46 64 nC

mΩV

TM

PowerTrench

®

SyncFET

TM

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

©2011 Fairchild Semiconductor Corporation
FDMS3008SDC Rev.C

Source-Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 39 62 nC

V

= 0 V, IS = 2 A (Note 2) 0.4 0.8

GS

= 0 V, IS = 28 A (Note 2) 0.8 1.2

V

GS

= 28 A, di/dt = 300 A/μs

I

F

2

32 51 ns

V

www.fairchildsemi.com

Thermal Characteristics

FDMS3008SDC N-Channel Dual Cool

R

θJC

R

θJC

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

NOTES:

1. R

is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R

θJA

by the user's board design.

Thermal Resistance, Junction to Case (Top Source) 3.5
Thermal Resistance, Junction to Case (Bottom Drain) 1.6
Thermal Resistance, Junction to Ambient (Note 1a) 38
Thermal Resistance, Junction to Ambient (Note 1b) 81
Thermal Resistance, Junction to Ambient (Note 1c) 27
Thermal Resistance, Junction to Ambient (Note 1d) 34
Thermal Resistance, Junction to Ambient (Note 1e) 16
Thermal Resistance, Junction to Ambient (Note 1f) 19
Thermal Resistance, Junction to Ambient (Note 1g) 26
Thermal Resistance, Junction to Ambient (Note 1h) 61
Thermal Resistance, Junction to Ambient (Note 1i) 16
Thermal Resistance, Junction to Ambient (Note 1j) 23
Thermal Resistance, Junction to Ambient (Note 1k) 1 1
Thermal Resistance, Junction to Ambient (Note 1l) 13

a. 38 °C/W when mounted on

2

a 1 in

pad of 2 oz copper

is guaranteed by design while R

θJC

b. 81 °C/W when mounted on
a minimum pad of 2 oz copper

is determined

θCA

°C/W

TM

PowerTrench

®

SyncFET

2

c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in
d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink , 1 in2 pad of 2 oz copper
f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
g. 200FPM Airflow, No Heat Sink,1 in
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminu m He at Si nk, mi n im u m pad of 2 oz copper
k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in
l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. EAS of 112 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 15 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 33.4 A.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

5. ISD ≤ 28 A, di/dt ≤ 210 A/μs, VDD ≤ BV

2

pad of 2 oz copper

, Starting TJ = 25 oC.

DSS

pad of 2 oz copper

2

pad of 2 oz copper

TM

©2011 Fairchild Semiconductor Corporation
FDMS3008SDC Rev.C

3

www.fairchildsemi.com

FDMS3008SDC N-Channel Dual Cool

0.0 0.5 1.0 1.5 2.0

0

50

100

150

200

VGS = 4.5 V

VGS = 4 V

VGS = 3.5 V

VGS = 6 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 10 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 40 80 120 160 200

0

1

2

3

4

VGS = 6 V

VGS = 3.5 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

V

GS

= 4 V

VGS = 4.5 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 28 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANC E

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

2

4

6

8

10

TJ = 125 oC

ID = 28 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOL TAG E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

2.0 2.5 3.0 3.5 4.0

0

50

100

150

200

TJ = 125 oC

V

DS

= 5 V

PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0 .6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

100

200

TJ = -55 oC

TJ = 25 oC

TJ = 125 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25°C unless otherwise noted

J

vs Drain Current and Gate Voltage

Norm a l i z e d O n -Resista n c e

TM

PowerTrench

®

SyncFET

Fi g ure 3 . Nor m aliz e d On R esis t ance

vs Junction Temperature

©2011 Fairchild Semiconductor Corporation
FDMS3008SDC Rev.C

Figure 5. Transfer Characteristics

TM

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

4

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FDMS3008SDC N-Channel Dual Cool

0 1020304050

0

2

4

6

8

10

ID = 28 A

VDD = 20 V

V

DD

= 10 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 15 V

0.1 1 10

40

100

1000

5000

f = 1 MHz
V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

rss

C

oss

C

iss

30

0.01 0.1 1 10 100

1

10

40

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

I

AS

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

0

30

60

90

120

150

V

GS

= 4.5 V

Limited by Package

R

θJC

= 1.6 oC/W

V

GS

= 10 V

I

D

, DRAIN CURRENT (A)

T

C

, CASE TEMPERATURE (

o

C)

0.01 0.1 1 10 100200

0.01

0.1

1

10

100

500

1 s

100 μs

10 ms

DC

10 s

100 ms

1 ms

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS A REA IS
LIMITED BY r

DS(on)

SINGLE PULSE
T

J

= MAX RATED

R

θJA

= 81

o

C/W

T

A

= 25

o

C

10-410-310-210

-1

110

100 1000

1

10

100

1000

2000

SINGLE PULSE
R

θJA

= 81

o

C/W

T

A

= 25

o

C

P(

PK

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics

= 25°C unless otherwise noted

J

Figure 8.

Capacitance vs Drain

to Source Voltage

TM

PowerTrench

®

SyncFET

Figure 9.

Unc l a m p e d I ndu c t i v e

Switching Capability

©2011 Fairchild Semiconductor Corporation
FDMS3008SDC Rev.C

Figure 11. Forward Bias Safe

Op

erating Area

TM

Figure 10.

Ma ximum Con tin uous D rai n

Current vs Case Temperature

Figure 12.

Sing le Pulse Ma ximum

Power Dissipation

5

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FDMS3008SDC N-Channel Dual Cool

10

-4

10

-3

10

-2

10

-1

10

0

10

1

100 1000

0.0005

0.001

0.01

0.1

1

SINGLE PULSE
R

θJA

= 81 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

2

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics T

Figure 13.

= 25°C unless otherwise noted

J

Junction-to-Ambient Transient Thermal Response Curve

TM

PowerTrench

®

SyncFET

©2011 Fairchild Semiconductor Corporation
FDMS3008SDC Rev.C

6

TM

www.fairchildsemi.com

Figure 15. SyncFET body diode reverses
leakage versus drain-source voltage

0 5 10 15 20 25

0.000001

0.00001

0.0001

0.001

0.01

TJ = 125 oC

TJ = 100 oC

TJ = 25 oC

I

DSS

, REVERSE LEAKAGE CURRENT (A)

VDS, REVERSE VOLTAGE (V)

Typical Characteristics (continued)

0 50 100 150 200 250 300

-5

0

5

10

15

20

25

30

di/dt = 300 A/μs

CURRENT (A)

TIME (ns)

SyncFET Schottky body diode
Characteristics

FDMS3008SDC N-Channel Dual Cool

Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS3008SDC.

Figure 14. FDMS3008SDC SyncFET body
diode reverse recovery characteristic

Schottky barrier diodes exhibit significant leakage at high tem­perature and high reverse voltage. This will increase the power
in the device.

TM

PowerTrench

®

SyncFET

TM

©2011 Fairchild Semiconductor Corporation
FDMS3008SDC Rev.C

7

www.fairchildsemi.com

Dimensional Outline and Pad Layout

FDMS3008SDC N-Channel Dual Cool

TM

PowerTrench

®

SyncFET

TM

©2011 Fairchild Semiconductor Corporation
FDMS3008SDC Rev.C

8

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TRADEMARKS

tm

®

tm

™

tm

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semicon ductor and/or it s global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.

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QS™
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Saving our world, 1mW/W/kW at a time™
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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.

FDMS3008SDC N-Channel Dual Cool

TM

PowerTrench

®

SyncFET

TM

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the in dustry. All manufactures of semiconductor products are experi encing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit part s experi ence ma ny pr oblems such as lo ss of brand r eput ation, sub stan dard perfor mance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Fairchild stro ngly encourages customers t o purchase Fairchild part s either di rectly from Fairchild or from Authorized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms

.

2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

©2011 Fairchild Semiconductor Corporation
FDMS3008SDC Rev.C

Datasheet contains the design specifications for product develop ment. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

9

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Rev. I55