Page 1
FDMS2734
4
3
2
1
5
6
7
8
®
N-Channel UltraFET Trench
250V, 14A, 122m:
Features
Max r
Max r
Low Miller Charge
Optimized efficiency at high frequencies
RoHS Compliant
= 122m: at VGS = 10V, ID = 2.8A
DS(on)
= 130m: at VGS = 6V, ID = 1.7A
DS(on)
MOSFET
General Description
UItraFET devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for r
these devices are ideal for high frequency DC to DC converters.
Application
DC - DC Conversion
DS(on)
FDMS2734 N-Channel UltraFET Trench
March 2011
, low ESR, low total and Miller gate charge,
®
MOSFET
Pin 1
S
D
D
Power 56 (Bottom view)
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage 250 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Silicon limited) TC = 25°C 14
-Pulsed 30
Power Dissipation TC = 25°C 78
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
S
S
G
D
D
D
D
D
= 25°C unless otherwise noted
A
D
= 25°C (Note 1a) 2.8
A
= 25°C (Note 1a) 2.5
A
G
S
S
S
Thermal Characteristics
R
TJC
R
TJA
Thermal Resistance, Junction to Case 1.6
Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
A -Continuous T
W
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDMS2734 FDMS2734 Power 56 13’’ 12mm 3000 units
©2011 Fairchild Semiconductor Corporation
FDMS2734 Rev.C1
1
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Page 2
FDMS2734 N-Channel UltraFET Trench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
'BV
DSS
'T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
'V
GS(th)
'T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 250PA, VGS = 0V 250 V
Breakdown Voltage Temperature
Coefficient
I
= 250PA, referenced to 25°C 250 mV/°C
D
Zero Gate Voltage Drain Current VDS = 200V, 1 PA
Gate to Source Leakage Current VGS = ±20V, V
= 0V ±100 nA
GS
(Note 2)
Gate to Source Threshold Voltage VGS = VDS, ID = 250PA234V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance VDS = 10V, ID = 2.8A 11 S
= 250PA, referenced to 25°C -11 mV/°C
I
D
V
= 10V, ID = 2.8A 105 122
GS
= 6V, ID = 1.7A 110 130
GS
= 10V, ID = 2.8A TJ = 125°C 217 258
V
GS
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 80 110 pF
Reverse Transfer Capacitance 25 40 pF
V
= 100V, VGS = 0V,
DS
f = 1MHz
1775 2365 pF
Gate Resistance f = 1MHz 0.9 :
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time 10 20 ns
Turn-Off Delay Time 36 58 ns
VDD = 125V, ID = 2.8A
V
GS
= 10V, R
GEN
= 6:
Fall Time 12 22 ns
Total Gate Charge at 10V V
Gate to Source Gate Charge 7 nC
= 0V to 10V
GS
V
DD
I
D
= 125V
= 2.8A
Gate to Drain “Miller” Charge 9 nC
22 36 ns
30 42 nC
m:V
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: R
TJA
by the user's board design.
2: Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
FDMS2734 Rev.C1
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 214 321 nC
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
I
F
a. 50°C/W when mounted on
a 1 in2 pad of 2 oz copper
= 0V, IS = 2.8A (Note 2) 0.75 1.20 V
GS
= 2.8A, di/dt = 100A/Ps
2
79 119 ns
is guaranteed by design while R
TJC
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
TCA
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is determined
Page 3
FDMS2734 N-Channel UltraFET Trench
012345
0
5
10
15
20
25
30
VGS = 6V
VGS = 5V
VGS = 4.5V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
VGS = 10V
I
D
, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
0 5 10 15 20 25 30
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT(A)
V
GS
= 6V
VGS = 5V
VGS = 4.5V
V
GS
= 10V
-75 -50 -25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
ID = 2.8A
V
GS
= 10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERATURE (oC)
46810
80
160
240
320
400
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
TJ = 150oC
T
J
= 25
o
C
ID = 7A
r
DS(on)
, DRAIN TO
SOURCE ON-RESISTANCE
(m:)
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
TJ = -55oC
TJ = 25oC
TJ = 150oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1E-3
0.01
0.1
1
10
TJ = -55oC
TJ = 25oC
TJ = 150oC
V
GS
= 0V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
20
Typical Characteristics T
Figure 1.
On Region Characteristics Figure 2.
= 25°C unless otherwise noted
J
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
®
MOSFET
F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e
vs Junction Temperature
16
12
8
4
0
23456
FDMS2734 Rev.C1
Figure 5. Transfer Characteristics
Figure 4.
O n - R es i s t a n c e vs G a t e t o
Source Voltage
Figure 6.
S o u r ce t o D r a i n Di o d e
Forward Voltage vs Source Current
3
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Page 4
FDMS2734 N-Channel UltraFET Trench
0 8 16 24 32
0
2
4
6
8
10
VDD = 125V
V
DD
=75V
V
GS
, GATE TO SOURCE VOLTAGE(V)
Qg, GATE CHARGE(nC)
VDD = 175V
0.1 1 10 100
10
100
1000
f = 1MHz
V
GS
= 0V
C
rss
C
oss
C
iss
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
3000
0.01 0.1
1
2
3
4
TJ = 25oC
TJ = 125oC
tAV, TIME IN AVALANCHE(ms)
I
AS
, AVALANCHE CURRENT(A)
0.5
25 50 75 100 125 150
0
3
6
9
12
15
R
TJC
= 1.6oC/W
I
D
, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
V
GS
= 6V
V
GS
= 10V
0.1 1 10 100 1000
0.001
0.01
0.1
1
10
40
1 s
10 ms
DC
10 s
100 ms
1 ms
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
TJA
= 125
o
C/W
T
A
= 25
o
C
10
-3
10
-2
10-110
0
10
1
10
2
10
3
0.1
1
10
100
1000
VGS = 10V
SINGLE PULSE
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (s)
3000
TA = 25oC
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150 TA–
125
------------------------
Typical Characteristics T
Figure 7.
Gate Charge Characteristics Figure 8.
= 25°C unless otherwise noted
J
C a p a c i t a n c e v s D r a i n
to Source Voltage
®
MOSFET
Figure 9.
U n c l a m p e d I n d u c t i v e
Switching Capability
F ig u re 1 1. F or w ar d B ia s Sa f e
Operating Area
FDMS2734 Rev.C1
Figure 10.
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
Figure 12.
4
S i n g l e P u l s e M a x i m u m
Power Dissipation
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Page 5
FDMS2734 N-Channel UltraFET Trench
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1E-4
1E-3
0.01
0.1
1
T
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = PDM x Z
TJA
x R
TJA
+ T
A
Typical Characteristics T
2
DUTY CYCLE-DESCENDING ORDER
D = 0.5
JA
IMPEDANCE, Z
NORMALIZED THERMAL
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
= 25°C unless otherwise noted
J
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
®
MOSFET
FDMS2734 Rev.C1
5
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Page 6
FDMS2734 N-Channel UltraFET Trench
®
MOSFET
FDMS2734 Rev.C1
6
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Page 7
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®
t
tm
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intended to be an exhaustive list of all such trademarks.
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FlashWriter
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Global Power Resource
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Saving our world, 1mW/W/kW at a time™
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDMS2734 N-Channel UItraFET Trench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FDMS2734 Rev.C1
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
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Rev. I51
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