Page 1
tm
FDMS2572
N-Channel UltraFET Trench® MOSFET
150V, 27A, 47mΩ
Features
Max r
Max r
Low Miller Charge
Optimized efficiency at high frequencies
UIS Capability (Single pulse and Repetitive pulse)
RoHS Compliant
= 47mΩ at VGS = 10V, ID = 4.5A
DS(on)
= 53mΩ at VGS = 6V, ID = 4.5A
DS(on)
General Description
UItraFET devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for r
these devices are ideal for high frequency DC to DC converters.
DS(on)
Application
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
FDMS2572 N-Channel UltraFET Trench
February 2007
, low ESR, low total and Miller gate charge,
®
MOSFET
Pin 1
S
D
D
Power 56 (Bottom view)
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage 150 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25°C 27
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 30
Power Dissipation TC = 25°C 78
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
S
S
G
D
5
D
6
7
D
D
D
D
= 25°C unless otherwise noted
A
8
= 25°C 27
C
= 25°C (Note 1a) 4.5
A
= 25°C (Note 1a) 2.5
A
G
4
S
3
S
2
S
1
Thermal Characteristics
A
W
R
θJC
R
θJA
Thermal Resistance, Junction to Case 1.6
Thermal Resistance, Junction to Ambient (N ote 1a) 50
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS2572 FDMS2572 Power 56 13’’ 12mm 3000 units
©2007 Fairchild Semiconductor Corporation
FDMS2572 Rev.C2
°C/W
1
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Page 2
FDMS2572 N-Channel UltraFET Trench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 150 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 120V, V
Gate to Source Leakage Current VGS = ±20V, V
ID = 250µA, referenced to 25°C 180 mV/°C
= 0V 1 µA
GS
= 0V ±100 nA
DS
(Note 2)
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 2 3 4 V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance VDS = 10V, ID = 4.5A 14 S
ID = 250µA, referenced to 25°C -9.8 mV/°C
VGS = 10V, ID = 4.5A 36 47
VGS = 10V, ID = 4.5A, TJ = 125°C 69 103
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 130 175 pF
Reverse Transfer Capacitance 30 45 pF
VDS = 75V, VGS = 0V,
f = 1MHz
1960 2610 pF
Gate Resistance f = 1MHz 1.3 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time 8 16 ns
Turn-Off Delay Time 38 61 ns
VDD = 75V, ID = 1.0A
VGS = 10V, R
GEN
= 6Ω
11 20 ns
Fall Time 31 50 ns
Total Gate Charge at 10V V
Gate to Source Gate Charge 9 nC
= 0V to 10V
GS
VDD = 75V
ID = 4.5A
31 43 nC
Gate to Drain “Miller” Charge 7 nC
mΩVGS = 6V, ID = 4.5A 39 53
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: R
θJA
the user's board design.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
FDMS2572 Rev.C2
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 130 195 nC
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
IF = 4.5A, di/dt = 100A/µs
a.50°C/W when mounted on
a 1 in2 pad of 2 oz copper
= 0V, IS = 2.2A (Note 2) 0.7 1.0 V
GS
67 101 ns
is guaranteed by design while R
θJC
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
2
is determined by
θCA
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Page 3
FDMS2572 N-Channel UltraFET Trench
Typical Characteristics T
40
VGS = 10V
35
VGS = 6V
30
25
20
15
10
, DRAIN CURRENT (A)
D
I
5
0
012345
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1.
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
NORMALIZED
0.8
0.6
0.4
0.2
DRAIN TO SOURCE ON-RESISTANCE
-75 -50 -25 0 25 50 75 100 125 150
On-Region Characteristics Figure 2.
ID = 4.5A
V
= 10V
GS
TJ, JUNCTION TEMPERATURE (oC)
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
vs Junction Temperature
60
PULSE DURATION = 300µs
DUTY CYCLE = 2.0 %MAX
50
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
VGS = 5.5V
= 25°C unless otherwise noted
J
VGS = 5V
VGS = 4.5V
1.8
VGS =4.5V
0 8 16 24 32 40
ID, DRAIN CURRENT(A)
NORMALIZED
1.6
1.4
1.2
1.0
0.8
DRAIN TO SOURCE ON-RESISTANCE
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
VGS =5V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
110
PULSE DURATION =300µs
DUTY CYCLE = 2.0%MAX
, DRAIN TO
DS(on)
r
100
90
(mOHM)
80
70
60
50
40
30
SOURCE ON-RESISTANCE
345678910
Figure 4.
ID = 4.5A
VGS, GATE TO SOURCE VOLTAGE (V)
O n - R es i s t a n c e vs G a t e t o
Source Voltage
60
V
= 0V
GS
10
VGS =5.5V
VGS = 6V
VGS = 10V
TJ = 150oC
o
T
= 25
J
®
MOSFET
C
40
30
20
, DRAIN CURRENT (A)
10
D
I
0
FDMS2572 Rev.C2
TJ = 125oC
TJ = 25oC
TJ =-55oC
123456
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
3
1
TJ = 125oC
0.1
0.01
1E-3
, REVERSE DRAIN CURRENT (A)
S
I
1E-4
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
S o u r ce t o D r a i n Di o d e
TJ = 25oC
TJ = -55oC
Forward Voltage vs Source Current
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Page 4
FDMS2572 N-Channel UltraFET Trench
Typical Characteristics T
10
ID = 4.5A
8
6
4
2
, GATE TO SOURCE VOLTAGE(V)
0
GS
V
0 7 14 21 28 35
Qg, GATE CHARGE(nC)
Figure 7.
Gate Charge Characteristics Figure 8.
6
5
4
3
2
, AVALANCHE CURRENT(A)
AS
I
1
0.01 0.1 1 10
tAV, TIME IN AVALANCHE(ms)
Figure 9.
U n c l a m p e d I n d u c t i v e
Switching Capability
60
10
1
0.1
OPERATION IN THIS
AREA MAY BE
, DRAIN CURRENT (A)
LIMITED BY r
0.01
D
I
1E-3
0.1 1 10 100
DS(on)
VDS, DRAIN to SOURCE VOLTAGE (V)
F ig u re 1 1. F or w ar d B ia s Sa f e
Operating Area
V
=50V
DD
TJ = 125oC
SINGLE PULSE
T
= MAX RATED
J
= 25OC
T
A
= 25°C unless otherwise noted
J
VDD = 75V
VDD = 100V
TJ = 25oC
50
100us
1ms
10ms
100ms
1s
10s
DC
600
3000
1000
100
CAPACITANCE (pF)
f = 1MHz
V
= 0V
GS
10
0.1 1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
C a p a c i t a n c e v s D r a i n
to Source Voltage
6
5
V
= 10V
4
3
2
, DRAIN CURRENT (A)
1
D
R
= 50oC/W
I
θJA
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
Figure 10.
M a x i m u m C o n t i n u o u s D r a i n
GS
V
= 6V
GS
Current vs Ambient Temperature
2000
1000
100
VGS = 10V
FOR TEMPERATURES
o
I = I
25
C DERATE PEAK
150 TA–
-----------------------
125
ABOVE 25
CURRENT AS FOLLOWS:
10
), PEAK TRANSIENT POWER (W)
1
PK
0.5
P(
10
-3
Figure 12.
SINGLE PULSE
-2
10
10
t, PULSE WIDTH (s)
-1
10010
1
S i n g l e P u l s e M a x i m u m
Power Dissipation
C
iss
C
oss
C
rss
TA = 25oC
2
10
®
MOSFET
3
10
FDMS2572 Rev.C2
4
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Page 5
FDMS2572 N-Channel UltraFET Trench
Typical Characteristics T
2
1
θJA
0.1
0.01
IMPEDANCE, Z
NORMALIZED THERMAL
1E-3
5E-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
-3
10
10
-2
= 25°C unless otherwise noted
J
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-1
10
0
10
1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
P
DM
t
1
t
2
1/t2
x R
+ T
θJA
θJA
A
2
10
3
10
®
MOSFET
FDMS2572 Rev.C2
5
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Page 6
FDMS2572 N-Channel UltraFET Trench
®
MOSFET
FDMS2572 Rev.C2
6
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Page 7
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
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WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
®
UniFET™
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FDMS2572 N-Channel UItraFET Trench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body, or (b) support or sustain
life, or (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
FDMS2572 Rev. C2
Rev. I22
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