Datasheet FDMS2510SDC Datasheet (Fairchild)

FDMS2510SDC

4
3
2
1

5
6
7
8

S

S

S

G

D
D

D

D

Bottom Top

Pin 1

D

D

D

D

G

S

S

S

Power 56

N-Channel Dual CoolTM PowerTrench® SyncFET

25 V, 49 A, 2.9 mΩ

Features

 Dual CoolTM Top Side Cooling PQFN package
 Max r
 Max r
 High performance technology for extremely low r
 SyncFET Schottky Body Diode

 RoHS Compliant

= 2.9 mΩ at VGS = 10 V, ID = 23 A

DS(on)

= 4.2 mΩ at VGS = 4.5 V, ID = 18 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
Advancements in both silicon and Dual Cool
technologies have been combined to offer the lowest r
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance. This device has the
added benefit of an efficient monolithic Schottky body diode.

Applications

 Synchronous Rectifier for DC/DC Converters
 Telecom Secondary Side Rectification
 High End Server/Workstation Vcore Low Side

TM

July 2010

®

process.

TM

package

DS(on)

FDMS2510SDC N-Channel Dual Cool

TM

PowerTrench

®

SyncFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 5) 2.5 V/ns
P

D

, T

T

J

STG

Drain to Source Voltage 25 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 49

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 200
Single Pulse Avalanche Energy (Note 3) 84 mJ

Power Dissipation TC = 25 °C 60
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

A

= 25 °C 117

C

= 25 °C (Note 1a) 28

A

= 25 °C (Note 1a) 3.3

A

A

W

Thermal Characteristics

R

θJC

R

θJC

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

Package Marking and Ordering Information

©2010 Fairchild Semiconductor Corporation
FDMS2510SDC Rev.C

Device Marking Device Package Reel Size Tape Width Quantity

Thermal Resistance, Junction to Case (Top Source) 4.4
Thermal Resistance, Junction to Case (Bottom Drain) 2.1
Thermal Resistance, Junction to Ambient (Note 1a) 38
Thermal Resistance, Junction to Ambient (Note 1b) 81
Thermal Resistance, Junction to Ambient (Note 1i) 16
Thermal Resistance, Junction to Ambient (Note 1j) 23
Thermal Resistance, Junction to Ambient (Note 1k) 11

2510S FDMS2510SDC Dual Cool

TM

Power 56 13’’ 12 mm 3000 units

°C/W

www.fairchildsemi.com1

TM

FDMS2510SDC N-Channel Dual Cool

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 25 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 20 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V

I

= 10 mA, referenced to 25 °C 19 mV/°C

D

= 0 V 500 μA

GS

= 0 V 100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.7 3.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 10 mA, referenced to 25 °C -5 mV/°C

D

V

= 10 V, ID = 23 A 2.4 2.9

GS

= 4.5 V, ID = 18 A 3.4 4.2

GS

= 10 V, ID = 23 A, TJ = 125 °C 3.5 4.3

V

GS

Forward Transconductance VDS = 5 V, ID = 23 A 159 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 577 770 pF
Reverse Transfer Capacitance 128 195 pF
Gate Resistance 1.1 2.4 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g
g
gs
gd

Turn-On Delay Time
Rise Time 410ns
Turn-Off Delay Time 27 43 ns
Fall Time 310ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 15 21 nC
Gate to Source Gate Charge 6.3 nC
Gate to Drain “Miller” Charge 4.0 nC

= 13 V, VGS = 0 V,

V

DS

f = 1 MHz

= 13 V, ID = 23 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

V

DD

I

= 23 A

D

= 13 V,

2090 2780 pF

10 20 ns

32 45 nC

mΩV

TM

PowerTrench

®

SyncFET

TM

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

©2010 Fairchild Semiconductor Corporation
FDMS2510SDC Rev.C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 17 31 nC

V

= 0 V, IS = 2 A (Note 2) 0.48 0.8

GS

= 0 V, IS = 23 A (Note 2) 0.79 1.2

V

GS

= 23 A, di/dt = 300 A/ μs

I

F

2

23 36 ns

V

www.fairchildsemi.com

Thermal Characteristics

FDMS2510SDC N-Channel Dual Cool

R

θJC

R

θJC

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

NOTES:

1. R

is determined with the device mounted on speci fi e d pa d 2 oz copper pad on board of FR-4 material. R

θJA

board design.

Thermal Resistance, Junction to Case (Top Source) 4.4
Thermal Resistance, Junction to Case (Bottom Drain) 2.1
Thermal Resistance, Junction to Ambient (Note 1a) 38
Thermal Resistance, Junction to Ambient (Note 1b) 81
Thermal Resistance, Junction to Ambient (Note 1c) 27
Thermal Resistance, Junction to Ambient (Note 1d) 34
Thermal Resistance, Junction to Ambient (Note 1e) 16
Thermal Resistance, Junction to Ambient (Note 1f) 19
Thermal Resistance, Junction to Ambient (Note 1g) 26
Thermal Resistance, Junction to Ambient (Note 1h) 61
Thermal Resistance, Junction to Ambient (Note 1i) 16
Thermal Resistance, Junction to Ambient (Note 1j) 23
Thermal Resistance, Junction to Ambient (Note 1k) 11
Thermal Resistance, Junction to Ambient (Note 1l) 13

a. 38 °C/W when mounted on
a 1 in2 pad of 2 oz copper

is guaranteed by design while R

θJC

b. 81 °C/W when mounted on
a minimum pad of 2 oz copper

is determined by the user's

θCA

°C/W

TM

PowerTrench

®

SyncFET

c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
of 84 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 13 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 20 A.

3. E

AS

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

5. ISD ≤ 23 A, di/dt ≤ 200 A/μs, VDD ≤ BV

, Starting TJ = 25 oC.

DSS

TM

©2010 Fairchild Semiconductor Corporation
FDMS2510SDC Rev.C

3

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FDMS2510SDC N-Channel Dual Cool

012345

0

30

60

90

120

150

VGS = 3.5 V

VGS = 10 V

VGS = 3 V

VGS = 2.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 4.5 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 30 60 90 120 150

0

2

4

6

8

10

VGS = 2.5 V

VGS = 4.5 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

VGS = 10 V

VGS = 3.5 V

VGS = 3 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

-75 -50 -25 0 25 50 75 100 125 150

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

ID = 23 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

2

4

6

8

10

TJ = 125 oC

ID = 23 A

TJ = 25 oC

V

GS

, GATE TO S OURCE VOLTAG E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

1.0 1.5 2.0 2.5 3.0 3.5 4.0

0

30

60

90

120

150

TJ = 125 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

100

200

TJ = -55 oC

TJ = 25 oC

TJ = 125 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Nor m a l i z e d On-Resis t a n c e

vs Drain Current and Gate Voltage

TM

PowerTrench

®

SyncFET

Fi gure 3 . No r mali zed O n Res i sta n ce

vs Junction Temperature

©2010 Fairchild Semiconductor Corporation
FDMS2510SDC Rev.C

Figure 5. Transfer Characteristics

TM

Figure 4.

On-Re sistance v s Gate to

Source Voltage

Figure 6.

Sou rce to Drain Diode

Forward Voltage vs Source Current

4

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FDMS2510SDC N-Channel Dual Cool

0 5 10 15 20 25 30 35

0

2

4

6

8

10

ID = 23A

V

DD

= 16 V

V

DD

= 10 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 13 V

0.1 1 10 30

50

100

1000

5000

f = 1 MHz
V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOL TAGE (V)

C

rss

C

oss

C

iss

0.01 0.1 1 10 1000

1

10

50

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

I

AS

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

0

50

100

150

V

GS

= 4.5 V

R

θJC

= 2.1 oC/W

V

GS

= 10 V

I

D

, DRAIN CURRENT (A)

T

C

, CASE TEMPERATURE (

o

C)

Limited by package

0.01 0.1 1 10 100

0.01

0.1

1

10

100

500

100 us

DC

100 ms

10 ms

1 ms

1 s

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY r

DS(on)

SINGLE PULSE
T

J

= MAX RATED

R

θJA

= 81

o

C/W

T

A

= 25

o

C

10 s

200

10-410-310-210-1110

100 1000

0.5

1

10

100

1000

10000

P

(PK)

, PEAK TRANSIENT POWER (W)

SINGLE PULSE
R

θJA

= 81 oC/W

T

A

= 25 oC

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

J

Capacitance vs Drain

to Source Voltage

TM

PowerTrench

®

SyncFET

Figure 9.

©2010 Fairchild Semiconductor Corporation
FDMS2510SDC Rev.C

Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain

Figure 11.

Forw a r d B i a s Safe

Operating Area

TM

Current vs Case Temperature

Figure 12.

Single Pulse Maximum

Pow er Dissipation

5

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FDMS2510SDC N-Channel Dual Cool

10

-4

10

-3

10

-2

10

-1

110

100 1000

0.001

0.01

0.1

1

2

SINGLE PULSE
R

θJA

= 81 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PU L SE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics T

Figure 13. Junction-to-Ambient Transient T hermal Response Curve

= 25 °C unless otherwise noted

J

TM

PowerTrench

®

SyncFET

©2010 Fairchild Semiconductor Corporation
FDMS2510SDC Rev.C

6

TM

www.fairchildsemi.com

Typical Characteristics (continued)

0 50 100 150 200

-5

0

5

10

15

20

25

di/dt = 300 A/μs

CURRENT (A)

TIME (ns)

0 5 10 15 20 25

10

-6

10

-5

10

-4

10

-3

10

-2

TJ = 125 oC

TJ = 100 oC

TJ = 25 oC

I

DSS

, REVERSE LEAKAGE CURRENT (A)

VDS, REVERSE VOLTAGE (V)

SyncFET Schottky body diode
Characteristics

FDMS2510SDC N-Channel Dual Cool

Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS2510SDC.

Figure 14. FD MS2510SDC SyncFET bo dy

diode reverse recovery characteristic

Schottky barrier diodes exhibit significant leakage at high temper­ature and high reverse voltage. This will increase the power in the
device.

TM

PowerTrench

®

SyncFET

Figure 15. SyncFET body diode reverse
leakage versus drain-source voltage

TM

©2010 Fairchild Semiconductor Corporation
FDMS2510SDC Rev.C

7

www.fairchildsemi.com

Dimensional Outline and Pad Layout

FDMS2510SDC N-Channel Dual Cool

TM

PowerTrench

®

SyncFET

TM

©2010 Fairchild Semiconductor Corporation
FDMS2510SDC Rev.C

8

www.fairchildsemi.com

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®

The following includes registered and unregistered trademarks and se rvice marks, owned by Fairchild Semiconductor and/o r its global subsidia ries, and is not
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FDMS2510SDC N-Channel Dual Cool

TM

PowerTrench

®

SyncFET

TM

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

©2010 Fairchild Semiconductor Corporation
FDMS2510SDC Rev.C

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time withou t
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

9

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Rev. I48