Datasheet FDMS2506SDC Datasheet (Fairchild)

FDMS2506SDC

4

3

2

1

5

6

7

8

S

S

S

G

D

D

D

D

Bottom Top

Pin 1

D

D

D

D

G

S

S

S

Power 56

N-Channel Dual CoolTM PowerTrench® SyncFET

25 V, 49 A, 1.45 mΩ

Features

 Dual CoolTM Top Side Cooling PQFN package

 Max r

 Max r

 High performance technology for extremely low r

 SyncFET Schottky Body Diode

 RoHS Compliant

= 1.45 mΩ at VGS = 10 V, ID = 30 A

DS(on)

= 2.1 mΩ at VGS = 4.5 V, ID = 26 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
Advancements in both silicon and Dual Cool
technologies have been combined to offer the lowest r
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance. This device has the
added benefit of an efficient monolithic Schottky body diode.

Applications

 Synchronous Rectifier for DC/DC Converters

 Telecom Secondary Side Rectification

 High End Server/Workstation Vcore Low Side

TM

July 2010

®

process.

TM

package

DS(on)

FDMS2506SDC N-Channel Dual Cool

TM

PowerTrench

®

SyncFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 5) 1.6 V/ns

P

D

, T

T

J

STG

Drain to Source Voltage 25 V

Gate to Source Voltage (Note 4) ±20 V

Drain Current -Continuous (Package limited) TC = 25 °C 49

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 200

Single Pulse Avalanche Energy (Note 3) 220 mJ

Power Dissipation TC = 25 °C 89

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

A

= 25 °C 202

C

= 25 °C (Note 1a) 39

A

= 25 °C (Note 1a) 3.3

A

A

W

Thermal Characteristics

R

θJC

R

θJC

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

©2010 Fairchild Semiconductor Corporation
FDMS2506SDC Rev.C

Thermal Resistance, Junction to Case (Top Source) 2.7

Thermal Resistance, Junction to Case (Bottom Drain) 1.4

Thermal Resistance, Junction to Ambient (Note 1a) 38

Thermal Resistance, Junction to Ambient (Note 1b) 81

Thermal Resistance, Junction to Ambient (Note 1i) 16

Thermal Resistance, Junction to Ambient (Note 1j) 23

Thermal Resistance, Junction to Ambient (Note 1k) 11

2506S FDMS2506SDC Dual Cool

TM

Power 56 13’’ 12 mm 3000 units

1

°C/W

www.fairchildsemi.com

TM

FDMS2506SDC N-Channel Dual Cool

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 25 V

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current VDS = 20 V, V

Gate to Source Leakage Current, Forward VGS = 20 V, V

I

= 10 mA, referenced to 25 °C 21 mV/°C

D

= 0 V 500 μA

GS

= 0 V 100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.7 3.0 V

Gate to Source Threshold Voltage
Temperature Coefficient

Static Drain to Source On Resistance

I

= 10 mA, referenced to 25 °C -5 mV/°C

D

V

= 10 V, ID = 30 A 1.2 1.45

GS

= 4.5 V, ID = 26 A 1.6 2.1

GS

= 10 V, ID = 30 A, TJ = 125 °C 1.6 2.0

V

GS

Forward Transconductance VDS = 5 V, ID = 30 A 171 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 1200 1560 pF

Reverse Transfer Capacitance 244 370 pF

= 13 V, VGS = 0 V,

V

DS

f = 1 MHz

Gate Resistance 0.8 1.8 Ω

4470 5945 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

Q

g

g

gs

gd

Turn-On Delay Time

Rise Time 7.4 15 ns

Turn-Off Delay Time 41 66 ns

= 13 V, ID = 30 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

16 29 ns

Fall Time 4.8 10 ns

Total Gate Charge VGS = 0 V to 10 V

Total Gate Charge VGS = 0 V to 4.5 V 30 43 nC

Gate to Source Gate Charge 13.4 nC

V

DD

I

= 30 A

D

= 13 V,

66 93 nC

Gate to Drain “Miller” Charge 7.5 nC

mΩV

TM

PowerTrench

®

SyncFET

TM

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

©2010 Fairchild Semiconductor Corporation
FDMS2506SDC Rev.C

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 39 63 nC

V

= 0 V, IS = 2 A (Note 2) 0.40 0.7

GS

= 0 V, IS = 30 A (Note 2) 0.76 1.2

V

GS

= 30 A, di/dt = 300 A/μs

I

F

2

35 56 ns

V

www.fairchildsemi.com

Thermal Characteristics

FDMS2506SDC N-Channel Dual Cool

R

θJC

R

θJC

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

NOTES:

1. R

is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R

θJA

by the user's board design.

Thermal Resistance, Junction to Case (Top Source) 2.7

Thermal Resistance, Junction to Case (Bottom Drain) 1.4

Thermal Resistance, Junction to Ambient (Note 1a) 38

Thermal Resistance, Junction to Ambient (Note 1b) 81

Thermal Resistance, Junction to Ambient (Note 1c) 27

Thermal Resistance, Junction to Ambient (Note 1d) 34

Thermal Resistance, Junction to Ambient (Note 1e) 16

Thermal Resistance, Junction to Ambient (Note 1f) 19

Thermal Resistance, Junction to Ambient (Note 1g) 26

Thermal Resistance, Junction to Ambient (Note 1h) 61

Thermal Resistance, Junction to Ambient (Note 1i) 16

Thermal Resistance, Junction to Ambient (Note 1j) 23

Thermal Resistance, Junction to Ambient (Note 1k) 11

Thermal Resistance, Junction to Ambient (Note 1l) 13

a. 38 °C/W when mounted on
a 1 in2 pa d of 2 oz c opp er

is guaranteed by design while R

θJC

b. 81 °C/W when mounted on
a minimum pad of 2 oz copper

is determined

θCA

°C/W

TM

PowerTrench

®

SyncFET

c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper

d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper

e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper

f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper

h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper

i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in

j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper

k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper

l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. EAS of 220 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 21 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 32 A.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

5. ISD ≤ 30 A, di/dt ≤ 200 A/μs, VDD ≤ BV

, Starting TJ = 25 oC.

DSS

2

pad of 2 oz copper

TM

©2010 Fairchild Semiconductor Corporation
FDMS2506SDC Rev.C

3

www.fairchildsemi.com

FDMS2506SDC N-Channel Dual Cool

012345

0

30

60

90

120

150

180

VGS = 3.5 V

VGS = 10 V

VGS = 3 V

VGS = 2.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 4.5 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 30 60 90 120 150 180

0

2

4

6

8

10

12

VGS = 2.5 V

VGS = 4.5 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

VGS = 10 V

VGS = 3.5 V

VGS = 3 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

-75 -50 -25 0 25 50 75 100 125 150

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

ID = 30 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

1

2

3

4

5

6

TJ = 125 oC

ID = 30 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

1.0 1.5 2.0 2.5 3.0 3.5 4.0

0

30

60

90

120

150

180

TJ = 125 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.01

0.1

1

10

100

180

TJ = -55 oC

TJ = 25 oC

TJ = 125 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

TM

PowerTrench

®

SyncFET

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

vs Junction Temperature

©2010 Fairchild Semiconductor Corporation
FDMS2506SDC Rev.C

Figure 5. Transfer Characteristics

TM

Figure 4.

O n - R es i s t a n c e vs G a t e t o

Source Voltage

Figure 6.

S o u r ce t o D r a i n Di o d e

Forward Voltage vs Source Current

4

www.fairchildsemi.com

FDMS2506SDC N-Channel Dual Cool

0 10203040506070

0

2

4

6

8

10

ID = 30 A

VDD = 13 V

V

DD

= 10 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 16 V

0.1 1 10 30

100

1000

10000

f = 1 MHz
V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

rss

C

oss

C

iss

0.01 0.1 1 10 100 500

1

10

50

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TI ME IN AV ALANCHE ( ms)

I

AS

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

0

50

100

150

200

250

V

GS

= 4.5 V

R

θJC

= 1.4 oC/W

V

GS

= 10 V

I

D

, DRAIN CURRENT (A)

T

C

, CASE TEMPERATURE (

o

C)

Limited by package

0.01 0.1 1 10 100

0.01

0.1

1

10

100

500

100 us

DC

100 ms

10 ms

1 ms

1 s

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY r

DS(on)

SINGLE PULSE
T

J

= MAX RATED

R

θJA

= 81

o

C/W

T

A

= 25

o

C

10 s

200

10-410-310-210

-1

110

100 1000

0.5

1

10

100

1000

10000

P

(PK)

, PEAK TRANSIENT POWER (W)

SINGLE PULSE

R

θJA

= 81 oC/W

T

A

= 25 oC

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Fi gure 8.

= 25 °C unless otherwise noted

J

C a p a c i t a n c e v s D r a i n

to Source Voltage

TM

PowerTrench

®

SyncFET

Figure 9.

U n c l a m p e d I n d u c t i v e

Switching Capability

©2010 Fairchild Semiconductor Corporation
FDMS2506SDC Rev.C

F ig u re 1 1. F or w ar d B ia s Sa f e

erating Area

Op

TM

Figure 10.

M a x i m u m C o n t i n u o u s D r a i n

Current vs Case Temperature

Figure 12.

S i n g l e P u l s e M a x i m u m

Power Dissipation

5

www.fairchildsemi.com

FDMS2506SDC N-Channel Dual Cool

10

-4

10

-3

10

-2

10

-1

110

100 1000

0.0001

0.001

0.01

0.1

1

2

SINGLE PULSE

R

θJA

= 81 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PULSE DURATION (sec )

D = 0.5

0.2

0.1

0.05

0.02

0.01

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics T

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

J

TM

PowerTrench

®

SyncFET

©2010 Fairchild Semiconductor Corporation
FDMS2506SDC Rev.C

6

TM

www.fairchildsemi.com

Typical Characteristics (continued)

0 5 10 15 20 25

10

-6

10

-5

10

-4

10

-3

10

-2

TJ = 125 oC

TJ = 100 oC

TJ = 25 oC

I

DSS

, REVERSE LEAKAGE CURRENT (A)

VDS, REVERSE VOLTAGE (V)

0 50 100 150 200 250

-5

0

5

10

15

20

25

30

35

di/dt = 300 A/μs

CURRENT (A)

TIME (ns)

SyncFET Schottky body diode
Characteristics

FDMS2506SDC N-Channel Dual Cool

Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS2506SDC.

Figure 14. FDMS2506SDC SyncFET body

diode reverse recovery characteristic

Schottky barrier diodes exhibit significant leakage at high tem­perature and high reverse voltage. This will increase the power
in the device.

TM

PowerTrench

®

SyncFET

Figure 15. SyncFET body diode reverse

leakage versus drain-source voltage

TM

©2010 Fairchild Semiconductor Corporation
FDMS2506SDC Rev.C

7

www.fairchildsemi.com

Dimensional Outline and Pad Layout

FDMS2506SDC N-Channel Dual Cool

TM

PowerTrench

®

SyncFET

TM

©2010 Fairchild Semiconductor Corporation
FDMS2506SDC Rev.C

8

www.fairchildsemi.com

TRADEMARKS

®

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.

AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
ESBC™

Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™

®

®

®

®

®

®

*

F-PFS™

®

FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™

®

MotionMax™
Motion-SPM™
OptiHiT™
OPTOLOGIC
OPTOPLANAR

®

®

SM

®

PDP SPM™

Power-SPM™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™

®

®

™

Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™

®

SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™

®*

The Power Franchise

®

TinyBoost™
TinyBuck™
TinyCalc™

®

TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
μSerDes™

®

UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™

®

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed

application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is

.

2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.

committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

FDMS2506SDC N-Channel Dual Cool

TM

PowerTrench

®

SyncFET

TM

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

©2010 Fairchild Semiconductor Corporation
FDMS2506SDC Rev.C

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

Rev. I48

www.fairchildsemi.com9