Datasheet FDMS2504SDC Datasheet (Fairchild)

FDMS2504SDC

4
3
2
1

5
6
7
8

S

S

S

G

D
D

D

D

Bottom Top

Pin 1

D

D

D

D

G

S

S

S

Power 56

N-Channel Dual CoolTM PowerTrench® SyncFET

25 V, 49 A, 1.25 mΩ

Features

 Dual CoolTM Top Side Cooling PQFN package
 Max r
 Max r
 High performance technology for extremely low r
 SyncFET Schottky Body Diode

 RoHS Compliant

= 1.25 mΩ at VGS = 10 V, ID = 32 A

DS(on)

= 1.75 mΩ at VGS = 4.5 V, ID = 28 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
Advancements in both silicon and Dual Cool
technologies have been combined to offer the lowest r
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance. This device has the
added benefit of an efficient monolithic Schottky body diode.

Applications

 Synchronous Rectifier for DC/DC Converters
 Telecom Secondary Side Rectification
 High End Server/Workstation Vcore Low Side

TM

July 2010

®

process.

TM

package

DS(on)

FDMS2504SDC N-Channel Dual Cool

TM

PowerTrench

®

SyncFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 5) 1.5 V/ns
P

D

, T

T

J

STG

Drain to Source Voltage 25 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 49

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 200
Single Pulse Avalanche Energy (Note 3) 288 mJ

Power Dissipation TC = 25 °C 104
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

A

= 25 °C 235

C

= 25 °C (Note 1a) 42

A

= 25 °C (Note 1a) 3.3

A

A

W

Thermal Characteristics

R

θJC

R

θJC

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

Package Marking and Ordering Information

©2010 Fairchild Semiconductor Corporation
FDMS2504SDC Rev.C

Device Marking Device Package Reel Size Tape Width Quantity

Thermal Resistance, Junction to Case (Top Source) 2.6
Thermal Resistance, Junction to Case (Bottom Drain) 1.2
Thermal Resistance, Junction to Ambient (Note 1a) 38
Thermal Resistance, Junction to Ambient (Note 1b) 81
Thermal Resistance, Junction to Ambient (Note 1i) 16
Thermal Resistance, Junction to Ambient (Note 1j) 23
Thermal Resistance, Junction to Ambient (Note 1k) 11

2504S FDMS2504SDC Dual Cool

TM

Power 56 13’’ 12 mm 3000 units

1

°C/W

www.fairchildsemi.com

TM

FDMS2504SDC N-Channel Dual Cool

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 25 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 20 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V

I

= 10 mA, referenced to 25 °C 21 mV/°C

D

= 0 V 500 μA

GS

= 0 V 100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.6 3.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 10 mA, referenced to 25 °C -5 mV/°C

D

V

= 10 V, ID = 32 A 1.0 1.25

GS

= 4.5 V, ID = 28 A 1.4 1.75

GS

= 10 V, ID = 32 A, TJ = 125 °C 1.4 1.8

V

GS

Forward Transconductance VDD = 5 V, ID = 32 A 221 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 1615 2150 pF
Reverse Transfer Capacitance 317 475 pF
Gate Resistance 0.5 1.0 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g
g
gs
gd

Turn-On Delay Time
Rise Time 918ns
Turn-Off Delay Time 44 70 ns
Fall Time 510ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 39 55 nC
Gate to Source Gate Charge 16.5 nC
Gate to Drain “Miller” Charge 9.7 nC

= 13 V, VGS = 0 V,

V

DS

f = 1 MHz

= 13 V, ID = 32 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

V

DD

I

= 32 A

D

= 13 V,

5843 7770 pF

18 33 ns

85 119 nC

mΩV

TM

PowerTrench

®

SyncFET

TM

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

©2010 Fairchild Semiconductor Corporation
FDMS2504SDC Rev.C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 52 84 nC

V

= 0 V, IS = 2 A (Note 2) 0.38 0.7

GS

= 0 V, IS = 32 A (Note 2) 0.75 1.2

V

GS

= 32 A, di/dt = 300 A/μs

I

F

2

39 63 ns

V

www.fairchildsemi.com

Thermal Characteristics

FDMS2504SDC N-Channel Dual Cool

R

θJC

R

θJC

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

NOTES:

1. R

is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R

θJA

by the user's board design.

Thermal Resistance, Junction to Case (Top Source) 2.6
Thermal Resistance, Junction to Case (Bottom Drain) 1.2
Thermal Resistance, Junction to Ambient (Note 1a) 38
Thermal Resistance, Junction to Ambient (Note 1b) 81
Thermal Resistance, Junction to Ambient (Note 1c) 27
Thermal Resistance, Junction to Ambient (Note 1d) 34
Thermal Resistance, Junction to Ambient (Note 1e) 16
Thermal Resistance, Junction to Ambient (Note 1f) 19
Thermal Resistance, Junction to Ambient (Note 1g) 26
Thermal Resistance, Junction to Ambient (Note 1h) 61
Thermal Resistance, Junction to Ambient (Note 1i) 16
Thermal Resistance, Junction to Ambient (Note 1j) 23
Thermal Resistance, Junction to Ambient (Note 1k) 11
Thermal Resistance, Junction to Ambient (Note 1l) 13

a. 38 °C/W when mounted on
a 1 in2 pad of 2 oz copper

is guaranteed by design while R

θJC

b. 81 °C/W when mounted on
a minimum pad of 2 oz copper

is determined

θCA

°C/W

TM

PowerTrench

®

SyncFET

c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum He at Sink, 1 in2 pad of 2 oz copper
j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
of 288 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 24 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 35 A.

3. E

AS

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

5. ISD ≤ 32 A, di/dt ≤ 200 A/μs, VDD ≤ BV

, Starting TJ = 25 °C.

DSS

TM

©2010 Fairchild Semiconductor Corporation
FDMS2504SDC Rev.C

3

www.fairchildsemi.com

FDMS2504SDC N-Channel Dual Cool

012345

0

30

60

90

120

150

180

VGS = 3.5 V

VGS = 3 V

VGS = 2.5 V

VGS = 4.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 10 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 30 60 90 120 150 180

0

4

8

12

16

20

VGS = 2.5 V

VGS = 3.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

VGS = 4.5 V

VGS = 3 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

ID = 32 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

1

2

3

4

5

TJ = 125 oC

ID = 32 A

TJ = 25 oC

V

GS

, GATE TO S OURCE VOLTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

1.5 2.0 2.5 3.0 3.5

0

30

60

90

120

150

180

TJ = 125 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0

0.01

0.1

1

10

100

200

TJ = -55 oC

TJ = 25 oC

TJ = 125 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Nor m a l i z e d On-Resis t a n c e

vs Drain Current and Gate Voltage

TM

PowerTrench

®

SyncFET

Fi gure 3 . No r mali zed O n Res i sta n ce

vs Junction Temperature

©2010 Fairchild Semiconductor Corporation
FDMS2504SDC Rev.C

Figure 5. Transfer Characteristics

TM

Figure 4.

On-Re sistance v s Gate to

Source Voltage

Figure 6.

Sou rce to Drain Diode

Forward Voltage vs Source Current

4

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FDMS2504SDC N-Channel Dual Cool

0 153045607590

0

2

4

6

8

10

ID = 32 A

V

DD

= 16 V

V

DD

= 13 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 10 V

0.1 1 10 30

200

1000

8000

f = 1 MHz
V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOL TAGE (V)

C

rss

C

oss

C

iss

0.01 0.1 1 10 100 1000

1

10

40

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

I

AS

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

0

50

100

150

200

250

V

GS

= 4.5 V

R

θJC

= 1.2 oC/W

V

GS

= 10 V

I

D

, DRAIN CURRENT (A)

T

C

, CASE TEMPERATURE (

o

C)

Limited by package

0.01 0.1 1 10 100

0.01

0.1

1

10

100

500

100 us

DC

100 ms

10 ms

1 ms

1 s

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY r

DS(on)

SINGLE PULSE
T

J

= MAX RATED

R

θJA

= 81

o

C/W

T

A

= 25

o

C

10 s

200

10-410-310-210

-1

110

100 1000

0.5

1

10

100

1000

10000

P

(PK)

, PEAK TRANSIENT POWER (W)

SINGLE PULSE
R

θJA

= 81 oC/W

T

A

= 25 oC

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

J

Capacitance vs Drain

to Source Voltage

TM

PowerTrench

®

SyncFET

Figure 9.

©2010 Fairchild Semiconductor Corporation
FDMS2504SDC Rev.C

Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain

Figure 11.

Forw a r d B i a s Safe

Operating Area

TM

Current vs Case Temperature

Figure 12.

Single Pulse Maximum

Pow er Dissipation

5

www.fairchildsemi.com

FDMS2504SDC N-Channel Dual Cool

10

-4

10

-3

10

-2

10

-1

110

100 1000

0.0001

0.001

0.01

0.1

1

2

SINGLE PULSE
R

θJA

= 81 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics T

Figure 13. Junction-to-Ambient Transient Thermal Response Cu rve

= 25 °C unless otherwise noted

J

TM

PowerTrench

®

SyncFET

©2010 Fairchild Semiconductor Corporation
FDMS2504SDC Rev.C

6

TM

www.fairchildsemi.com

Typical Characteristics (continued)

0 5 10 15 20 25

-5

0

5

10

15

20

25

30

35

di/dt = 300 A/μs

CURRENT (A)

TIME (ns)

0 5 10 15 20 25

10

-6

10

-5

10

-4

10

-3

10

-2

TJ = 125 oC

TJ = 100 oC

TJ = 25 oC

I

DSS

, REVERSE LEAKAGE CURRENT (A)

VDS, REVERSE VOLTAGE (V)

SyncFET Schottky body diode
Characteristics

FDMS2504SDC N-Channel Dual Cool

Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS2504SDC.

Figure 14. FD MS2504SDC SyncFET bo dy

diode reverse recovery characteristic

Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power in
the device.

TM

PowerTrench

®

SyncFET

Figure 15. SyncFET body diode reverse
leakage versus drain-source voltage

TM

©2010 Fairchild Semiconductor Corporation
FDMS2504SDC Rev.C

7

www.fairchildsemi.com

Dimensional Outline and Pad Layout

FDMS2504SDC N-Channel Dual Cool

TM

PowerTrench

®

SyncFET

TM

©2010 Fairchild Semiconductor Corporation
FDMS2504SDC Rev.C

8

www.fairchildsemi.com

TRADEMARKS

®

The following includes registered and unregistered tradema rks and service marks, owned by Fair child Semiconductor and/ or its global subsidiaries, and is no t
intended to be an exhaustive list of all such trademarks.

AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
ESBC™

Fairchild
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FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™

®

®

®

®

®

®

*

F-PFS™

®

FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™

®

MotionMax™
Motion-SPM™
OptiHiT™
OPTOLOGIC
OPTOPLANAR

®

®

SM

®

PDP SPM™

Power-SPM™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™

®

®

™

Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™

®

SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™

®*
The Power Franchise

®

TinyBoost™
TinyBuck™
TinyCalc™

®

TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
μSerDes™

®

UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™

®

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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THEREIN, WHICH COVERS THESE PRODUCTS.

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As used here in:

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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufact ures of semiconductor products are experiencin g counterfeiting of their
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FDMS2504SDC N-Channel Dual Cool

TM

PowerTrench

®

SyncFET

TM

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

©2010 Fairchild Semiconductor Corporation
FDMS2504SDC Rev.C

Datasheet contains the design specificatio ns for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinu ed by Fai r child
Semiconductor. The datashe et is for reference information only.

Rev. I48

9

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