Page 1
FDMS039N08B
Bottom
Power 56
Top
D
D
D
D
G
S
S
S
Pin 1
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
FDMS039N08B N-Channel PowerTrench
September
N-Channel PowerTrench® MOSFET
80V, 100A, 3.9mΩ
Features
• R
• Low FOM R
• Low reverse recovery charge, Q
• Soft reverse recovery body diode
• Enables highly efficiency in synchronous rectification
• Fast Switching Speed
• 100% UIL Tested
• RoHS Compliant
= 3.2mΩ (Typ.)@ VGS = 10V, ID = 50A
DS(on)
DS(on) *QG
rr
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• Synchronous Rectification for Server / Telecom PSU
• Battery Charger and Battery Protection circuit
• DC motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
I
DM
E
AS
P
D
TJ, T
STG
Drain to Source Voltage 80 V
Gate to Source Voltage ±20 V
Drain Current
Drain Current - Pulsed (Note 2) 400 A
Single Pulsed Avalanche Energy (Note 3) 240 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
= 25oC unless otherwise noted*
C
- Continuous (TC = 25oC) 100
- Continuous (TA = 25oC) (Note 1) 19.4
(TC = 25oC) 104 W
(TA = 25oC) (Note 1) 2.5 W
Thermal Characteristics
Symbol Parameter
R
θJC
R
θJA
©2011 Fairchild Semiconductor Corporation
FDMS039N08B Rev. C2
Thermal Resistance, Junction to Case 1.2
Thermal Resistance, Junction to Ambient (Note 1) 50
1
Ratings
A
o
C
Units
o
C/W
www.fairchildsemi.com
Page 2
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS039N08B FDMS039N08B Power 56 13 ” 12 mm 3000 units
FDMS039N08B N-Channel PowerTrench
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 80 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 64V, V
Gate to Body Leakage Current VGS = ±20V, V
ID = 250µA, Referenced to 25oC - 0.04 - V/oC
= 0V - - 1 µA
GS
= 0V - - ±100 nA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250µA 2.5 - 4.5 V
Static Drain to Source On Resistance VGS = 10V, I
Forward Transconductance
VDS = 10V, ID = 50A (Note 4)
= 50A - 3.2 3.9 mΩ
D
- 100 - S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
(er) Engry Releted Output Capacitance VDS = 40V, VGS = 0V - 1646 - pF
oss
Q
g(tot)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance - 881 1170 pF
Reverse Transfer Capacitance - 15 - pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 34 - nC
Gate Charge Threshold to Plateau - 13 - nC
Gate to Drain “Miller” Charge - 16 - nC
VDS = 40V, VGS = 0V
f = 1MHz
VDS = 40V, ID = 50A
VGS = 0V to 10V
(Note 4,5)
- 5715 7600 pF
- 77 100 nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 25 60 ns
Turn-Off Delay Time - 48 106 ns
Turn-Off Fall Time - 17 44 ns
VDD = 40V, ID = 50A
VGS = 10V, R
(Note 4,5)
GEN
= 4.7Ω
ESR Equivalent Series Resistance Drain Open, f = 1MHZ - 1.2 - Ω
- 42 94 ns
®
MOSFET
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1.R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 0.3mH, IAS = 40A, Starting TJ = 25°C
4. Pulse Test: Pulse Width ≤ 300 µs, Duty cycle ≤ 2.0%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDMS039N08B Rev. C2
Maximum Continuous Drain to Source Diode Forward Current - - 100 A
Maximum Pulsed Drain to Source Diode Forward Current - - 400 A
Drain to Source Diode Forward Voltage VGS = 0V, I
Reverse Recovery Time
Reverse Recovery Charge - 80 - nC
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
= 50A - - 1.3 V
SD
VGS = 0V, I
= 50A, VDD = 40V
SD
dIF/dt = 100A/µs (Note 4)
is guaranteed by design while R
θJC
2
- 68 - ns
is determined by
θCA
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
www.fairchildsemi.com
Page 3
Typical Performance Characteristics
0.1 1 4
1
10
100
400
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
I
D
, Drain Current[A]
VDS, Drain-Source Voltage[V]
V
GS
= 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
3 4 5 6 7
1
10
100
400
-55oC
150oC
*Notes:
1. VDS = 10V
2. 250µs Pulse Test
25oC
I
D
, Drain Current[A]
VGS, Gate-Source Voltage[V]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
1
10
100
400
*Notes:
1. VGS = 0V
2. 250µs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0 50 100 150 200 250 300 350
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
*Note: TC = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[mΩ],
Drain-Source On-Resistance
ID, Drain Current [A]
0.1 1 10 80
5
10
100
1000
10000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. VGS = 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
0 20 40 60 80
0
2
4
6
8
10
*Note: ID = 50A
VDS = 16V
VDS = 40V
VDS = 64V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDMS039N08B N-Channel PowerTrench
®
MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDMS039N08B Rev. C2
3
www.fairchildsemi.com
Page 4
Typical Performance Characteristics (Continued)
-100 -50 0 50 100 150 200
0.94
0.96
1.00
1.04
1.08
*Notes:
1. VGS = 0V
2. ID = 250µA
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.6
0.8
1.0
1.2
1.4
1.6
1.8
*Notes:
1. VGS = 10V
2. ID = 50A
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
25 50 75 100 125 150
0
20
40
60
80
100
120
I
D
, Drain Current [A]
TC, Case Temperature [oC]
VGS=10V
R
θJC
=1.2oC/W
0.1 1 10 100
0.01
0.1
1
10
100
1000
100ms
1ms
10ms
I
D
, Drain Current [A]
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
DC
0 10 20 30 40 50 60 70 80
0.0
0.5
1.0
1.5
2.0
2.5
3.0
E
OSS
, [µJ]
VDS, Drain to Source Voltage [V]
0.01 0.1 1 10 100 1000
1
10
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]
STARTING TJ = 25oC
STARTING TJ = 150oC
I
AS
, AVALANCHE CURRENT (A)
tAV, TIME IN AVALANCHE (ms)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
FDMS039N08B N-Channel PowerTrench
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Ambient Temperature
Figure 11. Unclamped Inductive Figure 12. Eoss vs. Drain to Source Voltage
Switching Capability
®
MOSFET
FDMS039N08B Rev. C2
4
www.fairchildsemi.com
Page 5
Typical Performance Characteristics (Continued)
10
-3
10
-2
10
-1
1 10
100 1000
0.001
0.01
0.1
1
2
0.01
0.1
0.2
0.05
0.02
*Notes:
1. Z
θJA
(t) = 125oC/W Max.
2. Duty Factor, D= t1/t
2
3. TJM - TC = PDM * Z
θJC
(t)
0.5
Single pulse
Thermal Response [Z
θJA
]
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
Figure 13. Transient Thermal Response Curve
FDMS039N03B N-Channel PowerTrench
®
MOSFET
FDMS039N08B Rev. C2
www.fairchildsemi.com5
Page 6
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDMS039N08B N-Channel PowerTrench
®
MOSFET
FDMS039N08B Rev. C2
6
www.fairchildsemi.com
Page 7
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
• dv/dt controlled by R
G
• ISDcontrolled by pulse period
V
DD
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
IFM, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
• dv/dt controlled by R
G
• ISDcontrolled by pulse period
V
DD
L
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
IFM, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
FDMS039N08B N-Channel PowerTrench
Peak Diode Recovery dv/dt Test Circuit & Waveforms
®
MOSFET
FDMS039N08B Rev. C2
7
www.fairchildsemi.com
Page 8
Dimensional Outline and Pad Layout
FDMS039N08B N-Channel PowerTrench
®
MOSFET
FDMS039N08B Rev. C2
8
www.fairchildsemi.com
Page 9
TRADEMARKS
®
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
AccuPower™
Auto-SPM™
AX-CAP™*
®
BitSiC
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
®
®
ESBC™
®
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
®
FACT
®
FAST
FastvCore™
®
FlashWriter® *
FPS™
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
OptiHiT™
OPTOLOGIC
OPTOPLANAR
®
®
®
FETBench™
PDP SPM™
Power-SPM™
PowerTrench
PowerXS™
SM
Programmable Active Droop™
QFET
QS™
Quiet Series™
®
®
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
®
SPM
STEALTH™
SuperFET
®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™
®
®*
The Power Franchise
The Right Technology for Your Success™
TinyBoost™
TinyBuck™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
®
TranSiC
TriFault Detect™
TRUECURRENT®*
µSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
®
®
FDMS039N08B N-Channel PowerTrench
®
MOSFET
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FDMS039N08B Rev. C2
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
9
www.fairchildsemi.com
Rev. I55
Loading...