Datasheet FDMS0308AS Datasheet (Mosfet)

FDMS0308AS

4
3
2
1

5
6
7
8

Power 56

D

D

D

D

S

S

S

G

D
D

D

D

G

S

S

S

Pin 1

Bottom

Top

N-Channel PowerTrench® SyncFET

30 V, 49 A, 2.8 mΩ
Features

 Max r
 Max r
 Advanced package and silicon combination for low r

hig

 SyncFET Schottky Body Diode
 MSL1 robust package design
 100% UIL tested
 RoHS Co

= 2.8 mΩ at VGS = 10 V, ID = 24 A

DS(on)

= 3.5 mΩ at VGS = 4.5 V, ID = 21 A

DS(on)

h efficiency

mpliant

DS(on)

and

October 2014

TM

General Description

The FDMS0308AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r

while maintaining excellent switching performance.This

DS(on)

device has the added benefit of an efficient monolithic Schottky
body diode.

Applications

 Synchronous Rectifier for DC/DC Converters
 Notebook Vcore/GPU low side switch
 Networking Point of Load low side switch
 Telecom secondary side rectification

FDMS0308AS N-Channel PowerTrench

®

SyncFET

TM

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25°C 49

-

Continuous (Silicon limited) T

-Continuous T

-Pulsed
Single Pulse Avalanche Energy (Note 3) 66 mJ
Power Dissipation TC = 25°C 50
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

C

= 25°C 109

C

= 25°C (Note 1a) 24

A

= 25°C (Note 1a) 2.5

A

A

100

W

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS0308AS FDMS0308AS Power 56 13 ’’ 12

©2010 Fairchild Semiconductor Corporation
FDMS0308AS Rev.C2

Thermal Resistance, Junction to Case 2.5
Thermal Resistance, Junction to Ambient (Note 1a) 50

1

°C/W

mm 3000 units

www.fairchildsemi.com

FDMS0308AS N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage I
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current V
Gate to Source Leakage Current, Forward V

= 1 mA, VGS = 0 V30 V

D

I

= 10 mA, referenced to 25°C 19 mV/°C

D

= 24 V, V

DS

= 20 V, V

GS

= 0 V500μA

GS

= 0 V 100nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, I
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance V

I

= 10 mA, referenced to 25°C -5 mV/°C

D

V

= 10 V, ID = 24 A 2.22.8

GS

= 4.5 V, ID = 21 A3.03.5

GS

= 10 V, ID = 24 A, T

V

GS

= 5 V, ID = 24 A 145 S

DS

= 1 mA 1.2 1.7 3.0 V

D

= 125°C 3.1 4.0

J

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 815 1085 pF
Reverse Transfer Capacitance 85 125 pF
Gate Resistance 1.0 2.5 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g
g
gs
gd

Turn-On Delay Time
Rise Time 4.5 10 ns
Turn-Off Delay Time 29 46 ns
Fall Time 3.7 10 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 5.9 nC
Gate to Drain “Miller” Charge 4.6 nC

= 15 V, VGS = 0 V,

V

DS

f = 1MHz

= 15 V, ID = 24 A,

V

DD

V

= 10 V, R

GS

= 0 V to 10 V

GS

= 0 V to 4.5 V1623nC

GS

GEN

= 6 Ω

V

DD

I

= 24 A

D

= 15 V,

2255 3000 pF

11 19 ns

34 47 nC

mΩV

®

SyncFET

TM

Drain-Source Diode Characteristics

V

= 0 V, IS = 2 A (Note 2) 0.62 0.8

V

SD

t

rr

Q

rr

Notes:

1. R

is determined with the devi ce m ount ed on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

Source-Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 27 44 nC

a. 50 °C/W when mounted on a

2

1 in

pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. EAS of 66 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 21 A, VDD = 27 V, VGS = 10 V.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

©2010 Fairchild Semiconductor Corporation
FDMS0308AS Rev.C2

GS

= 0 V, IS = 24 A (Note 2) 0.8 1.2

V

GS

= 24 A, di/dt = 300 A/μs

I

F

2

26 42 ns

is guaranteed by design while R

θJC

b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.

V

is determined by

θCA

www.fairchildsemi.com

FDMS0308AS N-Channel PowerTrench

0.00.51.01.52.0

0

20

40

60

80

100

VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V

VGS = 6 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 3 V

VGS = 10 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

020406080100

0

2

4

6

8

VGS = 6 V

VGS = 3.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

V

GS

= 4 V

VGS = 4.5 V

VGS = 3 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 24 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

3

6

9

12

TJ = 125 oC

ID = 24 A

TJ = 25 oC

V

GS

, GATE TO S OURCE VO L TAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX

1234

0

20

40

60

80

100

TJ = 125 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0

0.001

0.01

0.1

1

10

100

TJ = -55 oC

TJ = 25 oC

TJ = 125 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25°C unless otherwise noted

J

Norma l i z e d O n - Resistance

vs Drain Current and Gate Voltage

®

SyncFET

TM

Fig ure 3. Norm a lized On Re s ista n ce

vs Junction Temperature

©2010 Fairchild Semiconductor Corporation
FDMS0308AS Rev.C2

Figure 5. Transfer Characteristics

Figure 4.

On-Resis tance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

3

www.fairchildsemi.com

FDMS0308AS N-Channel PowerTrench

0 10203040

0

2

4

6

8

10

ID = 24 A

VDD = 20 V

V

DD

= 10 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 15 V

0.1 1 10

100

1000

50

f = 1 MHz
V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

rss

C

oss

C

iss

30

5000

0.01 0.1 1 10 100

1

10

40

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE ( ms)

I

AS

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

0

20

40

60

80

100

120

V

GS

= 4.5 V

Limited by Package

R

θJC

= 2.5 oC/W

V

GS

= 10 V

I

D

, DRAIN CURRENT (A)

T

C

, CASE TEMPERATURE (

o

C)

0.01 0.1 1 10 100200

0.01

0.1

1

10

100

200

1 s

100 μs

10 ms

DC

10 s

100 ms

1 ms

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AR E A IS
LIMITED BY r

DS(on)

SINGLE PULSE
T

J

= MAX RATED

R

θJA

= 125

o

C/W

T

A

= 25

o

C

10-410-310-210-1110

100 1000

0.5

1

10

100

1000

2000

SINGLE PULSE
R

θJA

= 125

o

C/W

T

A

= 25

o

C

P(

PK

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics

= 25°C unless otherwise noted

J

Figure 8.

Capacitance vs Drain

to Source Voltage

®

SyncFET

TM

Figure 9.

Unc l a m p e d I ndu c t i v e

Switching Capability

©2010 Fairchild Semiconductor Corporation
FDMS0308AS Rev.C2

Figure 11. Forward Bias Safe

Op

erating Area

Figure 10.

Ma xim um C ont inu ous Dra in

Current vs Case Temperature

Figure 12.

Single Pulse Maximum

Power Dissipation

4

www.fairchildsemi.com

FDMS0308AS N-Channel PowerTrench

10

-4

10

-3

10

-2

10

-1

110

100 1000

0.0001

0.001

0.01

0.1

1

SINGLE PULSE
R

θJA

= 125 oC/W

(Note 1b)

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

2

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics T

Figure 13.

= 25°C unless otherwise noted

J

Junction-to-Ambient Transient Thermal Response Curve

®

SyncFET

TM

©2010 Fairchild Semiconductor Corporation
FDMS0308AS Rev.C2

5

www.fairchildsemi.com

Typical Characteristics (continued)

0 50 100 150 200 250

-5

0

5

10

15

20

25

di/dt = 3 00 A/μs

CURRENT (A)

TIME (ns)

0 5 10 15 20 25 30

0.000001

0.00001

0.0001

0.001

0.01

TJ = 125 oC

TJ = 100 oC

TJ = 25 oC

I

DSS

, REVERSE LEAKAGE CURRENT (A)

VDS, REVERSE VOLTAGE (V)

SyncFET Schottky body diode
Characteristics

FDMS0308AS N-Channel PowerTrench

Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS0308AS.

Figure 14. FDMS0308AS SyncFET body

diode reverse recovery characteristic

Schottky barrier diodes exhibit significant leakage at high tem­perature and high reverse voltage. This will increase the power
in the device.

®

SyncFET

TM

Figure 15. SyncFET body diode reverse
leakage versus drain-source voltage

©2010 Fairchild Semiconductor Corporation
FDMS0308AS Rev.C2

6

www.fairchildsemi.com

®

®

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Rev. I77

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