Datasheet FDMS015N04B Datasheet (Fairchild)

FDMS015N04B

N-Channel PowerTrench® MOSFET

40V, 100A, 1.5mW

FDMS015N04B N-Channel PowerTrench

February 2012

Features

• R

• Advanced Package and Silicon Combination for Low R

• Fast Switching Speed

• 100% UIL Tested

• RoHS Compliant

= 1.13mW (Typ.)@ VGS = 10V, ID = 50A

DS(on)

and High Efficiency

Top

Power 56

Bottom

D

D

D

D

DS(on)

S

S

Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.

Application

• Synchronous Rectification for Server / Telecom PSU

• Battery Charger and Battery Protection circuit

• DC motor drives and Uninterruptible Power Supplies

• Micro Solar Inverter

S

Pin 1

G

D

5

D

6

D

7

8

D

G

4

S

3

S

2

S

1

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

I

DM

E

AS

P

D

TJ, T

STG

Drain to Source Voltage 40 V

Gate to Source Voltage ±20 V

Drain Current

Drain Current - Pulsed (Note 2) 400 A

Single Pulsed Avalanche Energy (Note 3) 526 mJ

Power Dissipation

Operating and Storage Temperature Range -55 to +150

= 25oC unless otherwise noted*

C

- Continuous (TC = 25oC) 100

- Continuous (TA = 25oC) (Note 1) 31.3

(TC = 25oC) 104 W

(TA = 25oC) (Note 1) 2.5 W

Thermal Characteristics

Symbol Parameter

R

qJC

R

qJA

©2012 Fairchild Semiconductor Corporation
FDMS015N04B Rev. C1

Thermal Resistance, Junction to Case 1.2

Thermal Resistance, Junction to Ambient (Note 1) 50

1

Ratings

A

o

C

Units

o

C/W

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS015N04B FDMS015N04B Power 56 13 ” 12 mm 3000 units

FDMS015N04B N-Channel PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
DBV

DT
I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250mA, VGS = 0V 40 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 32V, V

Gate to Body Leakage Current VGS = ±20V, V

ID = 250mA, Referenced to 25oC - 37 - mV/oC

= 0V - - 1 mA

GS

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250mA 2.0 - 4.0 V

Static Drain to Source On Resistance VGS = 10V, ID = 50A - 1.13 1.5 mW

Forward Transconductance

VDS = 5V, ID = 50A

- 171 - S

Dynamic Characteristics

C

iss

C

oss

C

rss

C

(er) Engry Releted Output Capacitance VDS = 20V, VGS = 0V - 3896 - pF

oss

Q

g(tot)

Q

gs

Q

gs2

Q

gd

Input Capacitance

Output Capacitance - 2795 3720 pF

Reverse Transfer Capacitance - 162 - pF

VDS = 20V, VGS = 0V
f = 1MHz

Total Gate Charge at 10V

Gate to Source Gate Charge - 26 - nC

Gate Charge Threshold to Plateau - 9 - nC

Gate to Drain “Miller” Charge - 16 - nC

VDS = 20V, ID = 50A
VGS = 0V to 10V

(Note 4)

- 6560 8725 pF

- 91 118 nC

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

ESR Equivalent Series Resistance Drain Open, f = 1MHZ - 1.4 - W

Turn-On Delay Time

Turn-On Rise Time - 24 58 ns

Turn-Off Delay Time - 71 152 ns

Turn-Off Fall Time - 26 62 ns

VDD = 20V, ID = 50A
VGS = 10V, R

(Note 4)

GEN

= 4.7W

- 34 78 ns

®

MOSFET

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1.R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

qJA

the user's board design.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 3mH, IAS = 18.72A, Starting TJ = 25°C

4. Essentially Independent of Operating Temperature Typical Characteristics

FDMS015N04B Rev. C1

Maximum Continuous Drain to Source Diode Forward Current - - 100 A

Maximum Pulsed Drain to Source Diode Forward Current - - 400 A

Drain to Source Diode Forward Voltage VGS = 0V, I

Reverse Recovery Time

Reverse Recovery Charge - 90 - nC

a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.

= 50A - - 1.3 V

SD

VGS = 0V, I

SD

= 50A

dIF/dt = 100A/ms

qJC

2

- 78 - ns

is guaranteed by design while R

b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.

is determined by

qCA

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Typical Performance Characteristics

VGS, Gate-Source Voltage

[V]

400

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

500

400

*Notes:

1. VDS = 10V

2. 250ms Pulse Test

100

FDMS015N04B N-Channel PowerTrench

100

V

= 15.0V

GS

10.0V

, Drain Current[A]

D

I

10

0.1 1 2

*Notes:

1. 250ms Pulse Test

2. TC = 25oC

8.0V

7.0V

6.5V

6.0V

5.5V

5.0V

150oC

10

, Drain Current[A]

D

I

1

2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

25oC

-55oC

VDS, Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

1.3

1.2

VGS = 10V

1.1

[mW],

DS(ON)

R

VGS = 20V

1.0

Drain-Source On-Resistance

*Note: TC = 25oC

0.9
0 50 100 150 200 250 300

ID, Drain Current [A]

100

150oC

25oC

10

, Reverse Drain Current [A]

S

I

1

0.2 0.4 0.6 0.8 1.0 1.2

*Notes:

1. VGS = 0V

2. 250ms Pulse Test

VSD, Body Diode Forward Voltage [V]

®

MOSFET

FDMS015N04B Rev. C1

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10000

1000

*Note:

1. VGS = 0V

Capacitances [pF]

2. f = 1MHz

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

100

C

rss

50

0.1 1 10 40

= C

gd

gd

VDS, Drain-Source Voltage [V]

C

iss

C

oss

C

rss

10

8

VDS = 8V
VDS = 20V
VDS = 32V

6

4

, Gate-Source Voltage [V]

GS

V

2

*Note: ID = 50A

0

0 25 50 75 100

Qg, Total Gate Charge [nC]

3

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Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature

1.12

1.08

1.7

1.6

1.4

FDMS015N04B N-Channel PowerTrench

1.04

, [Normalized]

1.00

DSS

BV

0.96

Drain-Source Breakdown Voltage

0.92

-80 -40 0 40 80 120 160
TJ, Junction Temperature [oC]

*Notes:

1. VGS = 0V

2. ID = 250mA

1.2

, [Normalized]

1.0

DS(on)

R

0.8

Drain-Source On-Resistance

0.6

-80 -40 0 40 80 120 160
TJ, Junction Temperature [oC]

*Notes:

1. VGS = 10V

2. ID = 50A

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Ambient Temperature

1000

100

10

Operation in This Area

1

is Limited by R

, Drain Current [A]

D

I

*Notes:

1. TC = 25oC

0.1

2. TJ = 150oC

3. Single Pulse

0.01

0.01 0.1 1 10 100

DS(on)

VDS, Drain-Source Voltage [V]

10ms

100ms

DC

1ms

120

VGS= 10V

80

40

, Drain Current [A]

D

I

R

= 1.2oC/W

qJC

0

25 50 75 100 125 150

TC, Case Temperature [oC]

Figure 11. Eoss vs. Drain to Source Voltage Figure 12. Unclamped Inductive
Switching Capability

2.0

1.5

50

If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]

®

MOSFET

, [mJ]

1.0

OSS

E

0.5

0

0 10 20 30 40

VDS, Drain to Source Voltage [V]

FDMS015N04B Rev. C1

10

, Avalanche Current [A]

AS

I

4

STARTING TJ = 125oC

1

0.1 1 10 100 1000

tAV, Time In Avalanche [ms]

STARTING TJ = 25oC

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Typical Performance Characteristics (Continued)

Figure 13. Transient Thermal Response Curve

FDMS015N04B N-Channel PowerTrench

]

2

qJA

1

0.5

0.2

0.1

0.1

0.05

0.02

0.01

0.01

Single pulse

0.005

Thermal Response [Normalized] [Z

0.01 0.1 1 10 100 1000

P

*Notes:

1. Z

2. Duty Factor, D= t1/t

3. TJM - TC = PDM * Z

Rectangular Pulse Duration [sec]

DM

t

(t) = 125oC/W Max.

qJA

1

t

2

2

qJC

(t)

®

MOSFET

FDMS015N04B Rev. C1

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Gate Charge Test Circuit & Waveform

FDMS015N04B N-Channel PowerTrench

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

®

MOSFET

FDMS015N04B Rev. C1

6

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

+

DUT

DUT

I

I

SD

SD

Driver

Driver

R

R

G

G

V

V

GS

GS

+

V

V

DS

DS

_

_

L

LL

Same Type

Same Type

as DUT

as DUT

• dv/dt controlled by R

• dv/dt controlled by R

• ISDcontrolled by pulse period

• ISDcontrolled by pulse period

G

G

FDMS015N04B N-Channel PowerTrench

V

V

DD

DD

®

MOSFET

V

V

GS

GS

( Driver )

( Driver )

I

I

SD

SD

( DUT )

( DUT )

V

V

DS

DS

( DUT )

( DUT )

Gate Pulse Width

Gate Pulse Width

Gate Pulse Width

--------------------------

--------------------------

--------------------------

D =

D =

D =

Gate Pulse Period

Gate Pulse Period

Gate Pulse Period

IFM, Body Diode Forward Current

IFM, Body Diode Forward Current

I

I

RM

RM

Body Diode Reverse Current

Body Diode Reverse Current

Body Diode Recovery dv/dt

Body Diode Recovery dv/dt

V

V

SD

SD

Body Diode

Body Diode

Forward Voltage Drop

Forward Voltage Drop

di/dt

di/dt

10V

10V

V

V

DD

DD

FDMS015N04B Rev. C1

7

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Dimensional Outline and Pad Layout

FDMS015N04B N-Channel PowerTrench

®

MOSFET

FDMS015N04B Rev. C1

8

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®

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®

FAST
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®

FPS™
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®

FRFET
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OPTOLOGIC
OPTOPLANAR

®

®

®

SM

PDP SPM™
Power-SPM™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
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RapidConfigure™

®

®

Saving our world, 1mW/W/kW at a time™
SignalWise™
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®

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®

UHC
Ultra FRFET™
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®

®

FDMS015N04B N-Channel PowerTrench

®

MOSFET

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDMS015N04B Rev. C1

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

9

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Rev. I58