Datasheet FDMQ8203 Datasheet (Fairchild)

MLP 4.5x5

Top

Bottom

10

9

8

7

3

4

5

6

11 12

2

1

Q1 (Nch)Q4 (Nch)

Q3 (Pch)

Q2 (Pch)

D1,D2 to backside

D3,D4 to backside

(isolated from D1,D2)

G1

S1

G2

S2

G4

S4

G3

S3

S2

S1

G2

S2

S1

G1

S3

S4

G3

S3

S4

G4

Pin 1

D3/ D4

D1/ D2

FDMQ8203

GreenBridge Dual N-Channel and Dual P-Channel PowerTrench

N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ

Features

Q1/Q4: N-Channel

 Max r  Max r

Q2/Q3: P-Channel

 Max r  Max r

 Substantial efficiency benefit in PD solutions  RoHS Compliant

= 110 mΩ at VGS = 10 V, ID = 3 A

DS(on)

= 175 mΩ at VGS = 6 V, ID = 2.4 A

DS(on)

= 190 mΩ at VGS = -10 V, ID = -2.3 A

DS(on)

= 235 mΩ at VGS = -4.5 V, ID = -2.1 A

DS(on)

TM

Series of High-Efficiency Bridge Rectifiers

®

MOSFET

General Description

This quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge.

Application

 High-Efficiency Bridge Rectifiers

FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench

December 2011

MOSFET Maximum Ratings T

Symbol Parameter Q1/Q4 Q2/Q3 Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Thermal Characteristics

R

θJA

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMQ8203 FDMQ8203 MLP4.5x5 13 ” 12 mm 3000 units

Drain to Source Voltage 100 -80 V Gate to Source Voltage ±20 ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 6 -6

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 12 -10 Power Dissipation for Single Operation TC = 25 °C 22 37 Power Dissipation for Dual Operation T Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Ambient (Note 1a) 50 Thermal Resistance, Junction to Ambient (Note 1b) 160

= 25 °C unless otherwise noted

A

= 25 °C 10 -10

C

= 25 °C (Note 1a) 3.4 -2.6

A

= 25 °C (Note 1a) 2.5

A

1

®

MOSFET

A

W

°C/W

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FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

ΔBV ΔT

I

DSS

I

GSS

DSS

DSS J

= 250 μA, VGS = 0 V

Drain to Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current

D

I

= -250 μA, VGS = 0 V

D

ID = 250 μA, referenced to 25 °C I

= -250 μA, referenced to 25 °C

D

V

= 80 V, V

DS

V

= -64 V, V

DS

GS

= 0 V

Gate to Source Leakage Current VGS = ±20 V, VDS= 0 V

Q1/Q4 Q2/Q3

100

-80

V

72

-79

mV/°C

1

-1

±100 ±100nAnA

I

On Characteristics

V

GS(th)

ΔV ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage Gate to Source Threshold Voltage

Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance

= VDS, ID = 250 μA

GS

V

= VDS, ID = -250 μA

GS

ID = 250 μA, referenced to 25 °C I

= -250 μA, referenced to 25 °C

D

= 10 V, ID = 3 A

V

GS

V

= 6 V, ID = 2.4 A

GS

V

= 10 V, ID = 3 A , TJ = 125 °C

GS

V

= -10 V, ID = -2.3 A

GS

V

= -4.5 V, ID = -2.1 A

GS

V

= -10 V, ID = -2.3 A, TJ = 125 °C

GS

V

= 10 V, ID = 3 A

DS

V

= -10 V, ID = -2.3 A

DS

Q1/Q4 Q2/Q32-13-1.64-3

Q1/Q4 Q2/Q3

Q1/Q4

Q2/Q3

Q1/Q4 Q2/Q3

-8 5

85 118 147

161 188 273

6 6

110 175 191

190 235 323

mV/°C

μA μA

V

mΩ

S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

gs

gd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

Q1/Q4:

= 50 V, VGS = 0 V, f = 1 MHZ

V

DS

Q2/Q3:

= -40 V, VGS = 0 V, f = 1 MHZ

V

DS

Q1/Q4 Q2/Q3

158 639

41 46

2.6 24

210 850

55 65

5

40

pF

®

MOSFET

Q1/Q4:

= 50 V, ID = 3 A,

V

DD

V

= 10 V, R

GS

GEN

Q2/Q3:

= -40 V, ID = -2.3 A,

V

DD

V

= -10 V, R

GS

GEN

VGS = 0 V to 10 V VGS = 0 V to -10 V

VGS = 0 V to 5 V VGS = 0 V to -4.5 V

= 6 Ω

Q1/Q4: V

DD

I

D

Q2/Q3: V

DD

I

D

= 50 V,

= 3 A

= -40 V,

= -2.3A

Q1/Q4 Q2/Q3

3.8

4.71010

1.3

2.81010

7.52215 35

1.9

2.71010

2.9

13

19

1.6

6.4310

0.8

1.6

0.8

2.6

ns

5

nC

2

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FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics

V

= 0 V , IS = 3 A (Note 2)

V

SD

t

rr

Q

rr

Notes: 1: R

θJA

by the user's board design.

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

a.

50 °C/W when mounted on a 1 in pad of 2 oz copper, the board designed Q1+Q3 or Q2+Q4.

GS

V

= 0 V, IS = -2.3 A (Note 2)

GS

Q1/Q4: I

= 3 A, di/dt = 100 A/μs

F

Q2/Q3: I

= -2.3 A, di/dt = 100 A/μs

F

2

Q1/Q4 Q2/Q3

0.86

-0.82

Q1/Q4 Q2/Q3

θJC

b.

160 °C/W when mounted on a minimum pad of 2 oz copper, the board designed Q1+Q3 or Q2+Q4.

is guaranteed by design while R

32 26

21 26

1.3

-1.3 52

42 34

42

θCA

is determined

V

ns

nC

2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

®

MOSFET

3

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FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench

012345

0

3

6

9

12

VGS = 7 V

VGS = 10 V

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

VGS = 5 V

VGS = 6 V

VGS = 8 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

036912

0

1

2

3

4

5

VGS = 8 V

VGS = 10 V

VGS = 7 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

VGS = 6 V

VGS = 5 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 3 A V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANC E

T

J

, JUNCTION TEMPERATURE (

o

C)

45678910

0

100

200

300

400

TJ = 125 oC

ID = 3 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VO LTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

234567

0

3

6

9

12

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURC E V OLTAGE (V)

0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

20

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics (N-Channel) T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

vs Drain Current and Gate Voltage

Norma l i z e d O n - R e s i stance

Fi g u r e 3. No r m a lized O n R esista n c e

vs Junction Temperature

Figure 5. Transfer Characteristics

®

MOSFET

Figure 4.

Figure 6.

Forward Voltage vs Source Current

4

On-R esistan ce vs Gat e to

Source Voltage

Source to Drain Diode

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FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench

0 0.5 1.0 1.5 2.0 2.5 3.0

0

2

4

6

8

10

ID = 3 A

VDD = 75 V

V

DD

= 25 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 50 V

0.1 1 10 100

1

10

100

1000

f = 1 MHz V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

rss

C

oss

C

iss

0.1 1 10 100 300

0.005

0.01

0.1

1

10

20

10 s

10 ms

DC

1 s

100 ms

1 ms

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS A REA IS LIMITED BY r

DS(on)

SINGLE PULSE T

J

= MAX RATED

R

θJA

= 160

o

C/W

T

A

= 25

o

C

Typical Characteristics (N-Channel) T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

J

Capa c i t a nce v s D r ain

to Source Voltage

Figure 10.

Figure 9. Forward Bias Safe Operating Area

®

MOSFET

5

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FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench

012345

0

2

4

6

8

10

VGS = -2.5 V

VGS = -3 V

VGS = -4.5 V

VGS = -10 V

VGS = -3.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

-I

D

, DRAIN CURRENT (A)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

0246810

0

1

2

3

4

VGS = -2.5 V

VGS = -4.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

-ID, DRAIN CURRENT (A)

VGS = -3.5 V

VGS = -10 V

V

GS

= -3 V

-75 -50 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = - 2.3 A V

GS

= - 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESIST ANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

100

200

300

400

500

600

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = 125 oC

T

J

= 25

o

C

ID = -2.3 A

r

DS(on)

, DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

-VGS, GATE TO S OURCE VO L TAGE (V)

12345

0

2

4

6

8

10

TJ = 25 oC

V

DS

= -5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 150 oC

-I

D

, DRAIN CURRENT (A)

-VGS, GATE TO SOURCE V OLTAGE (V)

0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

-I

S

, REVERSE DRAIN CURRENT (A)

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics (P-Channel) T

Figure 10. On-Region Characteristics

= 25 oC unlenss otherwise noted

J

Figure 11. Normalized on-Resistance vs Drain

Current and Gate Voltage

Figure 12. Normalized On-Resistance

vs Junction Temperature

Figure 14. Transfer Characteristics

®

MOSFET

Figure 13. On-Resistance vs Gate to

Source Voltage

Figure 15. Source to Drain Diode

Forward Voltage vs Source Current

6

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02468101214

0

2

4

6

8

10

ID = -2.3 A

VDD = -12 V

V

DD

= -10 V

-V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = -8 V

0.1 1 10 100

10

100

1000

f = 1 MHz V

GS

= 0 V

CAPACITANCE (pF)

-VDS, DRAIN TO SOURCE VOLTA G E (V)

C

rss

C

oss

C

iss

0.1 1 10 100 300

0.005

0.01

0.1

1

10

20

10 s

10 ms

DC

1 s

100 ms

1 ms

-I

D

, DRAIN CURRENT (A)

-VDS, DRAIN to SOURCE VOLTAGE (V)

THIS A REA IS LIMITED BY r

DS(on)

SINGLE PULSE T

J

= MAX RATED

R

θJA

= 160

o

C/W

T

A

= 25

o

C

FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench

Typical Characteristics (P-Channel) T

Figure 16. Gate Charge Characteristics

= 25 oC unlenss otherwise noted

J

Figure 17. Capacitance vs Drain

to Source Voltage

igure 18. Forward Bias Safe Operating Area

F

®

MOSFET

7

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FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench

10

-4

10

-3

10

-2

10

-1

110

100 1000

0.1

1

10

100

1000

2000

P

(PK)

, PEAK TRANSIENT POWER (W)

SINGLE PULSE R

θJA

= 160 oC/W

T

A

= 25 oC

t, PULSE WIDTH (sec)

10

-4

10

-3

10

-2

10

-1

110

100 1000

0.0005

0.001

0.01

0.1

1

2

SINGLE PULSE R

θJA

= 160 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

P

DM

t

1

t

2

NOTES: DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics T

= 25 oC unlenss otherwise noted

J

Figure 19. Single Pulse Maximum Power Dissipation

Figure 20. Junction-to-Ambient Transient Thermal Response Curve

8

®

MOSFET

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Dimensional Outline and Pad Layout

FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench

®

MOSFET

9

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TRADEMARKS

tm

®

™

tm

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor an d/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

2Cool™ AccuPower™ Auto-SPM™ AX-CAP™*

®

BitSiC Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter

®

*

®

FPS™ F-PFS™

®

FRFET Global Power Resource GreenBridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ mWSaver™ OptoHiT™ OPTOLOGIC OPTOPLANAR

®

SM

®

PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™

®

RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™

®

SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™

®

®*

The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™

®

TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™

®

TranSiC TriFault Detect™ TRUECURRENT μSerDes™

®

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™

®

*

FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

®

MOSFET

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experie ncing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts exp erience many problems such as loss o f bran d re putat ion, subst and ard performance, fa iled application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Fairch ild stron gly encourage s custome rs to purchase Fair child part s either dire ctly from Fa irchild or from Au thorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and e ncourage our cust omers to do their part in stopping this practice by bu ying direct or from aut horized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

.

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

10

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Rev. I60

Datasheet FDMQ8203 Datasheet (Fairchild)

Specifications and Main Features

Frequently Asked Questions

User Manual