Datasheet FDMF6706C Datasheet (Fairchild)

March 2012

FDMF6706C – Extra-Small, High-Performance, HighFrequency DrMOS Module

FDMF6706C - Extra-Small High-Performance, High-Frequency DrMOS Module

Benefits

 Ultra-Compact 6x6mm PQFN, 72% Space-Saving

Compared to Conventional Discrete Solutions

 Fully Optimized System Efficiency  Clean Switching Waveforms with Minimal Ringing  High-Current Handling

Features

 Over 93% Peak-Efficiency  High-Current Handling of 43A  High-Performance PQFN Copper Clip Package  3-State 5V PWM Input Driver  Shorter Propagation Delays than FDMF6704  Shorter Dead Times than FDMF6704  Skip-Mode SMOD# (Low-Side Gate Turn Off) Input  Thermal Warning Flag for Over-Temperature

Condition

 Driver Output Disable Function (DISB# Pin)  Internal Pull-Up and Pull-Down for SMOD# and

DISB# Inputs, Respectively

 Fairchild PowerTrench® Technology MOSFETs for

Clean Voltage Waveforms and Reduced Ringing

 Fairchild SyncFET™ (Integrated Schottky Diode)

Technology in the Low-Side MOSFET

 Integrated Bootstrap Schottky Diode  Adaptive Gate Drive Timing for Shoot-through

Protection

 Under-Voltage Lockout (UVLO)  Optimized for Switching Frequencies up to 1MHz  Low-Profile SMD Package  Fairchild Green Packaging and RoHS Compliant  Based on the Intel® 4.0 DrMOS Standard

Description

The XS™ DrMOS family is Fairchild’s next-generation, fully optimized, ultra-compact, integrated MOSFET plus driver power stage solutions for high-current, highfrequency, synchronous buck DC-DC applications. The FDMF6706C integrates a driver IC, two power MOSFETs, and a bootstrap Schottky diode into a thermally enhanced, ultra-compact 6x6mm PQFN package.

With an integrated approach, the complete switching power stage is optimized with regards to driver and MOSFET dynamic performance, system inductance, and Power MOSFET R Fairchild's high-performance PowerTrench® MOSFET technology, which dramatically reduces switch ringing, eliminating the need for a snubber circuit in most buck converter applications.

A new driver IC with reduced dead times and propagation delays further enhances the performance of this part. A thermal warning function has been included to warn of a potential over-temperature situation. The FDMF6706C also incorporates features, such as Skip Mode (SMOD), for improved light-load efficiency along with a 3-state 5V PWM input for compatibility with a wide range of PWM controllers.

. XS™ DrMOS uses

DS(ON)

Applications

High-Performance Gaming Motherboards

  Compact Blade Servers, V-Core and Non-V-Core

DC-DC Converters

 Desktop Computers, V-Core and Non-V-Core

DC-DC Converters

 Workstations  High-Current DC-DC Point-of-Load (POL)

Converters

 Networking and Telecom Microprocessor Voltage

Regulators

 Small Form-Factor Voltage Regulator Modules

Ordering Information

Part

Number

FDMF6706C 40A 12V 1000kHz

Current

Rating

Input

Voltage

Switching

Frequency

Package Top Mark

40-Lead, Clipbond PQFN DrMOS,

6.0x6.0mm Package

FDMF6706C

Typical Application Circuit

A

FDMF6706C - Extra-Small High-Performance, High-Frequency DrMOS Module

V5V

C

VDRV

DISB#

PWM Input

OFF

ON

Open Drain Output

DrMOS Block Diagram

VCIN

UVLO

DISB#

PWM

SMOD#

THWN#

VDRV

VCIN

FDMF6706C

CGND

PGND

VIN

R

BOOT

PHASE

VSWH

BOOT

Figure 1. Typical Application Circuit

VDRV VIN

D

C

VIN

Boot

C

BOOT

VIN 3V ~ 15V

L

OUT

C

OUT

Q1 HS Power MOSFET

V

OUT

DISB#

PWM

THWN#

R

UP_PWM

R

DN_PWM

CGND

10µ

V

CIN

Temp. Sense

Input

State

3-

Logic

GH

Logic

Level Shift

Dead-Time

Control

GL

Logic

V

CIN

10µ

SMOD#

Figure 2. DrMOS Block Diagram

GH

30kΩ

PHASE

VSWH

V

DRV

GL

30kΩ

Q2 LS Power MOSFET

PGND

Pin Configuration

FDMF6706C - Extra-Small High-Performance, High-Frequency DrMOS Module

Figure 3. Bottom View Figure 4. Top View

Pin Definitions

Pin # Name Description

When SMOD#=HIGH, the low-side driver is the inverse of PWM input. When SMOD#=LOW,

1 SMOD#

2 VCIN IC bias supply. Minimum 1µF ceramic capacitor is recommended from this pin to CGND.

3 VDRV

4 BOOT

5, 37, 41 CGND IC ground. Ground return for driver IC.

6 GH For manufacturing test only. This pin must float. Must not be connected to any pin.

7 PHASE Switch node pin for bootstrap capacitor routing. Electrically shorted to VSWH pin.

8 NC

9 - 14, 42 VIN Power input. Output stage supply voltage.

15, 29 -

35, 43

16 – 28 PGND Power ground. Output stage ground. Source pin of low-side MOSFET.

36 GL For manufacturing test only. This pin must float. Must not be connected to any pin.

38 THWN#

39 DISB#

40 PWM PWM signal input. This pin accepts a 3-state 5V PWM signal from the controller.

VSWH

the low-side driver is disabled. This pin has a 10µA internal pull-up current source. Do not add a noise filter capacitor.

Power for gate driver. Minimum 1µF ceramic capacitor is recommended to be connected as close as possible from this pin to CGND.

Bootstrap supply input. Provides voltage supply to high-side MOSFET driver. Connect bootstrap capacitor from this pin to PHASE.

No connect. The pin is not electrically connected internally, but can be connected to VIN for convenience.

Switch node input. Provides return for high-side bootstrapped driver and acts as a sense point for the adaptive shoot-through protection.

Thermal warning flag, open collector output. When temperature exceeds the trip limit, the output is pulled LOW. THWN# does not disable the module.

Output disable. When LOW, this pin disables Power MOSFET switching (GH and GL are held LOW). This pin has a 10µA internal pull-down current source. Do not add a noise filter capacitor.

FDMF6706C - Extra-Small High-Performance, High-Frequency DrMOS Module

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

Symbol Parameter Min. Max. Unit

VCIN, VDRV, DISB#, PWM, SMOD#, GL, THWN# to CGND Pins 6

VIN to PGND, CGND Pins 25

BOOT, GH to VSWH, PHASE Pins 6

VSWH, PHASE to PGND, CGND Pins 25

BOOT to PGND, CGND Pins 27

BOOT to VDRV 22

f

=300kHz 43

(1)

I

O(AV)

θ

T

JPCB

STG

=12V, VO=1.0V

VIN

Junction-to-PCB Thermal Resistance 3.5 °C/W

Operating and Storage Temperature Range -55 +150 °C

ESD Electrostatic Discharge Protection

SW

fSW=1MHz 40

Human Body Model, JESD22-A114 2000

Charged Device Model, JESD22-C101 2000

Note:

1. I

is rated using Fairchild’s DrMOS evaluation board, at TA = 25°C, with natural convection cooling. This rating

O(AV)

is limited by the peak DrMOS temperature, T

= 150°C, and varies depending on operating conditions and PCB

J

layout. This rating can be changed with different application settings.

V

A

V

Recommended Operating Conditions

The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to Absolute Maximum Ratings.

Symbol Parameter Min. Typ. Max. Unit

V

Control Circuit Supply Voltage 4.5 5.0 5.5 V

CIN

V

Gate Drive Circuit Supply Voltage 4.5 5.0 5.5 V

DRV

VIN Output Stage Supply Voltage

Note:

2. Operating at high V

can create excessive AC overshoots on the VSWH-to-GND and BOOT-to-GND nodes

IN

during MOSFET switching transients. For reliable DrMOS operation, VSWH-to-GND and BOOT-to-GND must

remain at or below the Absolute Maximum Ratings shown in the table above. Refer to the “Application Information” and “PCB Layout Guidelines” sections of this datasheet for additional information.

(2)

3.0 12.0 15.0 V

Electrical Characteristics

Typical values are VIN = 12V, V

Symbol Parameter Condition Min. Typ. Max. Unit

Basic Operation

IQ Quiescent Current IQ=I

UVLO UVLO Threshold V

UVLO

PWM Input

R

V

t

D_HOLD-OFF

V

HiZ_PWM

DISB# Input

V

t

PD_DISBL

t

PD_DISBH

SMOD# Input

V

IH_SMOD

V

t

PD_SLGLL

t

PD_SHGLH

Thermal Warning Flag

R

250ns Timeout Circuit

t

D_TIMEOUT

UVLO Hysteresis 0.4 V

_Hyst

Pull-Up Impedance 10 kΩ

UP_PWM

Pull-Down Impedance 10 kΩ

DN_PWM

PWM High Level Voltage

IH_PWM

3-State Rising Threshold

TRI_HI

3-State Falling Threshold

TRI_LO

PWM Low Level Voltage

IL_PWM

3-State Shutoff Time 160 200 ns

3-State Open Voltage 2.3 2.5 2.7 V

High-Level Input Voltage 2 V

IH_DISB

Low-Level Input Voltage 0.8 V

IL_DISB

I

Pull-Down Current 10 µA

PLD

Propagation Delay

High-Level Input Voltage 2 V

Low-Level Input Voltage 0.8 V

IL_SMOD

I

Pull-Up Current 10 µA

PLM

Propagation Delay

T

Activation Temperature 150 °C

ACT

T

Reset Temperature 135 °C

RST

Pull-Down Resistance I

THWN

Timeout Delay

= 5V, V

CIN

= 5V, and T

DRV

VCIN+IVDRV

Rising 2.9 3.1 3.3 V

CIN

= +25°C unless otherwise noted.

A

, PWM=LOW or HIGH or Float 2 mA

3.30 3.55 3.80

3.20 3.45 3.70

1.00 1.25 1.50

0.85 1.15 1.40

PWM=GND, Delay Between DISB# from HIGH to LOW to GL from HIGH to LOW

PWM=GND, Delay Between DISB# from LOW to HIGH to GL from LOW to HIGH

PWM=GND, Delay Between SMOD# from HIGH to LOW to GL from HIGH to LOW

PWM=GND, Delay Between SMOD# from LOW to HIGH to GL from LOW to HIGH

=5mA 30 Ω

PLD

SW=0V, Delay Between GH from HIGH to LOW and GL from LOW to HIGH

25 ns

10 ns

250 ns

FDMF6706C - Extra-Small High-Performance, High-Frequency DrMOS Module

V

Continued on the following page…

FDMF6706C - Extra-Small High-Performance, High-Frequency DrMOS Module

Electrical Characteristics

Typical values are VIN = 12V, V

Symbol Parameter Condition Min. Typ. Max. Unit

High-Side Driver

R

SOURCE_GH

R

SINK_GH

t

D_DEADON

t

PD_PLGHL

t

PD_PHGHH

t

PD_TSGHH

Low-Side Driver

R

SOURCE_GL

R

SINK_GL

t

D_DEADOFF

t

PD_PHGLL

t

PD_TSGLH

Boot Diode

Output Impedance, Sourcing Source Current=100mA 1 Ω

Output Impedance, Sinking Sink Current=100mA 0.8 Ω

Rise Time GH=10% to 90%, C

R_GH

Fall Time GH=90% to 10%, C

F_GH

LS to HS Deadband Time

PWM LOW Propagation Delay

PWM HIGH Propagation Delay (SMOD Held LOW)

Exiting 3-State Propagation Delay

Output Impedance, Sourcing Source Current=100mA 1 Ω

Output Impedance, Sinking Sink Current=100mA 0.5 Ω

Rise Time GL=10% to 90%, C

R_GL

Fall Time GL=90% to 10%, C

F_GL

HS to LS Deadband Time

PWM-HIGH Propagation Delay

Exiting 3-State Propagation Delay

VF Forward-Voltage Drop IF=10mA 0.35 V

VR Breakdown Voltage IR=1mA 22 V

= 5V, V

CIN

= 5V, and T

DRV

= +25°C unless otherwise noted.

A

=1.1nF 12 ns

LOAD

=1.1nF 11 ns

LOAD

GL going LOW to GH going HIGH, 2V GL to 10 % GH

PWM going LOW to GH going LOW, V

IL_PWM

to 90% GH

PWM going HIGH to GH going HIGH, V

to 10% GH (SMOD=LOW)

IH_PWM

PWM (from 3-State) going HIGH to GH going HIGH, V

IH_PWM

to 10% GH

=2.7nF 12 ns

LOAD

=2.7nF 8 ns

LOAD

SW going LOW to GL going HIGH,

2.2V SW to 10% GL

PWM going HIGH to GL going LOW, V

IH_PWM

to 90% GL

PWM (from 3-State) going LOW to GL going HIGH, V

IL_PWM

to 10% GL

10 ns

16 30 ns

30 ns

12 ns

9 25 ns

20 ns

PWM

VSW

V

IH_PWM

FDMF6706C - Extra-Small High-Performance, High-Frequency DrMOS Module

V

IL_PWM

GL

GH

to

VSWH

H

t

PD PHGLL

90%

2.0V

t D_DEADON

Figure 5. PWM Timing Diagram

10%

t

PD PLGHL

90%

10%

1.2V

t

D_DEADOFF

t

D_TIMEOUT

( 250ns Timeout)

2.2V

Typical Performance Character istics

Test Conditions: VIN=12V, V unless otherwise specified.

Figure 6. Safe Operating Area Figure 7. Module Power Loss vs. Output Current

=1.0V, V

OUT

300kHz

1MHz

CIN

=5V, V

DRV

=5V, L

=320nH, TA=25°C, and natural convection cooling,

OUT

FDMF6706C - Extra-Small High-Performance, High-Frequency DrMOS Module

I

= 30A

OUT

fSW = 300kHz I

= 30A

OUT

Figure 8. Power Loss vs. Switching Frequency Figure 9. Power Loss vs. Input Voltage

fSW = 300kHz

= 30A

I

OUT

fSW = 300kHz

= 30A

I

OUT

Figure 10. Power Loss vs. Driver Supply Voltage Figure 11. Power Loss vs. Output Voltage

Typical Performance Characteristics (Continued)

Test Conditions: VIN=12V, V unless otherwise specified.

Figure 12. Power Loss vs. Output Inductance Figure 13. Driver Supply Current vs. Frequency

=1.0V, V

OUT

fSW = 300kHz I

= 30A

OUT

=5V, V

CIN

DRV

=5V, L

=320nH, TA=25°C, and natural convection cooling,

OUT

I

= 0A

OUT

FDMF6706C - Extra-Small High-Performance, High-Frequency DrMOS Module

fSW = 300kHz

= 0A

I

OUT

Figure 14. Driver Supply Current vs. Driver

Supply Voltage

Figure 15. Driver Supply Current vs. Output Current

Figure 16. PWM Thresholds vs. Temperature Figure 17. DISB# Thresholds vs. Temperature

Typical Performance Characteristics (Continued)

Test Conditions: VIN=12V, V unless otherwise specified.

=1.0V, V

OUT

=5V, V

CIN

=5V, L

DRV

OUT

FDMF6706C - Extra-Small High-Performance, High-Frequency DrMOS Module

=320nH, TA=25°C, and natural convection cooling,

Figure 18. SMOD# Thresholds vs. Temperature Figure 19. BOOT Diode V

vs. Temperature

F

Functional Description

A

p

t

The FDMF6706C is a driver-plus-FET module optimized for the synchronous buck converter topology. A single PWM input signal is all that is required to properly drive the high-side and the low-side MOSFETs. Each part is capable of driving speeds up to 1MHz.

VCIN and Disable

The VCIN pin is monitored by an under-voltage lockout (UVLO) circuit. When V is enabled for operation. When V the driver is disabled (GH, GL=0). The driver can also be disabled by pulling the DISB# pin LOW (DISB# <

), which holds both GL and GH LOW regardless

V

IL_DISB

of the PWM input state. The driver can be enabled by raising the DISB# pin voltage HIGH (DISB# > V

Table 1. UVLO and Disable Logic

UVLO DISB# Driver State

0 X Disabled (GH, GL=0)

1 0 Disabled (GH, GL=0)

1 1 Enabled (See T able 2)

1 Open Disabled (GH, GL=0)

Note:

3. DISB# has an internal pull-down current source of 10µA.

Thermal Warning Flag

The FDMF6706C provides a thermal warning flag (THWN) to warn of over-temperature conditions. The thermal warning flag uses an open-drain output that pulls to CGND when the activation temperature (150°C) is reached. The THWN output returns to a highimpedance state once the temperature falls to the reset temperature (135°C). For use, the THWN output requires a pull-up resistor, which can be connected to VCIN. THWN does NOT disable the DrMOS module.

HIGH

THWN Logic State

Normal Operation

LOW

Figure 20. THWN Operation

rises above ~3.1V, the driver

CIN

135°C Rese Temperature

T

J_driver IC

falls below ~2.7V,

CIN

150°C

ctivation

erature

Tem

IH_DISB

Thermal Warning

).

3-State PWM Input

The FDMF6706C incorporates a 3-state 5V PWM input gate drive design. The 3-state gate drive has both logic HIGH level and LOW level, along with a 3-state shutdown window. When the PWM input signal enters and remains within the 3-state window for a defined hold-off time (t

D_HOLD-OFF

), both GL and GH are pulled LOW. This feature enables the gate drive to shut down both high-and low-side MOSFETs to support features such as phase shedding, which is a common feature on multiphase voltage regulators.

Operation when Exiting 3-State Condition

When exiting a valid 3-state condition, the FDMF6706C design follows the PWM input command. If the PWM input goes from 3-state to LOW, the low side MOSFET is turned on. If the PWM input goes from 3-state to HIGH, the high-side MOSFET is turned on. This is illustrated in Figure 21. The FDMF6706C design allows for short propagation delays when exiting the 3-state

window (see Electrical Characteristics).

Low-Side Driver

The low-side driver (GL) is designed to drive a groundreferenced low R

N-channel MOSFET. The bias

DS(ON)

for GL is internally connected between VDRV and CGND. When the driver is enabled, the driver's output is 180° out of phase with the PWM input. When the driver is disabled (DISB#=0V), GL is held LOW.

High-Side Driver

The high-side driver is designed to drive a floating Nchannel MOSFET. The bias voltage for the high-side driver is developed by a bootstrap supply circuit, consisting of the internal Schottky diode and external bootstrap capacitor (C held at PGND, allowing C through the internal diode. When the PWM input goes HIGH, GH begins to charge the gate of the high-side MOSFET (Q1). During this transition, the charge is removed from C Q1 turns on, V V

+ V

IN

BOOT

rises to VIN, forcing the BOOT pin to

SWH

, which provides sufficient VGS enhancement for Q1. To complete the switching cycle, Q1 is turned off by pulling GH to VSWH. C VDRV when VSWH falls to PGND. GH output is inphase with the PWM input. The high-side gate is held LOW when the driver is disabled or the PWM signal is held within the 3-state window for longer than the 3state hold-off time, t

D_HOLD-OFF

). During startup, VSWH is

BOOT

to charge to VDRV

BOOT

and delivered to the gate of Q1. As

is then recharged to

BOOT

.

FDMF6706C - Extra-Small High-Performance, High-Frequency DrMOS Module

Adaptive Gate Drive Circuit

_

V

The driver IC advanced design ensures minimum MOSFET dead-time while eliminating potential shoot through (cross-conduction) currents. It senses the state of the MOSFETs and adjusts the gate drive adaptively to ensure they do not conduct simultaneously. Figure 21 provides the relevant timing waveforms. To prevent overlap during the LOW-to-HIGH switching transition (Q2 off to Q1 on), the adaptive circuitry monitors the voltage at the GL pin. When the PWM signal goes HIGH, Q2 begins to turn off after some propagation delay (t

PD_PHGLL

~2V, Q1 begins to turn on after adaptive delay t

V

IH_PWM

PWM

). Once the GL pin is discharged below

D_DEADON

V

IH_PWM

V

IL_PWM

t

R_GH

.

To preclude overlap during the HIGH-to-LOW transition (Q1 off to Q2 on), the adaptive circuitry monitors the voltage at the VSWH pin. When the PWM signal goes LOW, Q1 begins to turn off after some propagation delay (t

PD_PLGHL

Q2 begins to turn on after adaptive delay t Additionally, V

). Once the VSWH pin falls below ~2.2V,

is monitored. When V

GS(Q1)

D_DEADOFF

GS(Q1)

discharged below ~1.2V, a secondary adaptive delay is initiated, which results in Q2 being driven on after t

D_TIMEOUT

implemented to ensure C

, regardless of SW state. This function is

is recharged each

BOOT

switching cycle in the event that the SW voltage does not fall below the 2.2V adaptive threshold. Secondary delay t

V

TRI_HI

D_TIMEOUT

t

F_GH

is longer than t

V

IH_PWM

D_DEADOFF

.

V

TRI_HI

V

TRI_LO

IL_PWM

V

FDMF6706C - Extra-Small High-Performance, High-Frequency DrMOS Module

.

is

GH

to

VSWH

GL

CCM

t

PD_PHGLL

90%

2.0V

t

D_DEADON

less than t

2.2

10%

t

PD

PLGHL

t

D_DEADOFF

t

R_GL

D_HOLD

t

OFF

D_HOLD -

OFF

-

DCM

t

Enter

3

F_GL

State

-

t

Exit

3-State

PD_TSGHH

t

D_HOLD -OFF

Notes:

= propagation delay from external sign al (PWM, SMOD#, etc.) to IC generated signal. Example (t

t

PD_xxx

t

= delay from IC generated signal to IC generated signal. Example (t

D_xxx

PWM Exiting 3-state t

= PWM rise to LS VGS fall, V

PD_PHGLL

t

= PWM fall to HS VGS fall, V

PD_PLGHL

= PWM rise to HS VGS rise, V

t

PD_PHGHH

SMOD# Dead Times t

= SMOD# fall to LS VGS fall, V

PD_SLGLL

= SMOD# rise to LS VGS rise, V

t

PD_SHGLH

to 90% LS VGS t

IH_PWM

to 90% HS VGS t

IL_PWM

to 10% HS VGS (SMOD# held LOW)

IH_PWM

to 90% LS VGS t

IL_SMOD

to 10% LS VGS t

IH_SMOD

– LS VGS (GL) LOW to HS VGS (GH) HIGH)

D_DEADON

PD_TSGHH

PD_TSGLH

D_DEADON

D_DEADOFF

Figure 21. PWM and 3-StateTiming Diagram

DCM

t

PD_TSGHH

Enter

3

-State

PD_PHGLL

= PWM 3-state to HIGH to HS VGS rise, V = PWM 3-state to LOW to LS VGS rise, V

= LS VGS fall to HS VGS rise, LS-comp trip value (~2.0V GL) to 10% HS VGS

= VSWH fall to LS VGS rise, SW-comp trip value (~2.2V VSWH) to 10% LS VGS

Exit 3 S t at e

– PWM going HIGH to LS VGS (GL) going LOW)

less than

t

D_HOLD -

IH_PWM

IL_PWM

t

D_HOLD

OFF

Enter

3 -State

to 10% HS VGS

to 10% LS VGS

-

OFF

t

PD_TSGLH

Exit

State

3-

90%

10%

V

90%

1

IN

OUT

0%

Skip Mode (SMOD)

V

#

The SMOD function allows for higher converter efficiency under light-load conditions. During SMOD, the low-side FET gate signal is disabled (held LOW), preventing discharging of the output capacitors as the filter inductor current attempts reverse current flow – also known as “Diode Emulation” Mode.

When the SMOD pin is pulled HIGH, the synchronous buck converter works in Synchronous Mode, gating on the low-side FET. When the SMOD pin is pulled LOW, the low-side FET is gated off. The SMOD pin is connected to the PWM controller, which enables or disables the SMOD automatically when the controller detects light-load condition from output current sensing.

Normally this pin is active LOW. See Figure 22 for timing delays.

SMOD

V

IH_PWM

V

PWM

GH

to

SWH

IL_PWM

90%

10%

Table 2. SMOD Logic

DISB# PWM SMOD# GH GL

0 X X 0 0

1 3-State X 0 0

1 0 0 0 0

1 1 0 1 0

1 0 1 0 1

1 1 1 1 0

Note:

4. The SMOD feature is intended to have low

propagation delay between the SMOD signal and the low-side FET VGS response time to control diode emulation on a cycle-by-cycle basis.

V

IL_SMOD

V

IH_PWM

10%

IH_SMOD

FDMF6706C - Extra-Small High-Performance, High-Frequency DrMOS Module

SWH

GL

t

PD_PHGLL

t

D_DEADON

90%

2.0V

t

PD_PLGHL

2.2V

t

D_DEADOFF

10%

CCM

t

PD_SLGLL

Delay from SMOD# going

LOW to LS VGSLOW

HS turn -on with SMOD# LOW

t

PD_PHGHH

DCM

t

Delay from SMOD# going

HIGH to LS VGSHIGH

PD_SHGLH

10%

V

OUT

Figure 22. SMOD Timing Diagram

Application Information

A

Supply Capacitor Selection

For the supply input (V capacitor is recommended to reduce noise and to supply the peak current. Use at least a 1µF X7R or X5R capacitor. Keep this capacitor close to the VCIN pin and connect it to the GND plane with vias.

Bootstrap Circuit

The bootstrap circuit uses a charge storage capacitor (C

), as shown in Figure 23. A bootstrap capacitance

BOOT

of 100nF X7R or X5R capacitor is adequate. A series bootstrap resistor would be needed for specific applications to improve switching noise immunity.

VCIN Filter

The VDRV pin provides power to the gate drive of the high-side and low-side power FET. In most cases, it can be connected directly to VCIN, the pin that provides power to the logic section of the driver. For additional

V5V

I

5V

), a local ceramic bypass

CIN

C

VDR

noise immunity, an RC filter can be inserted between VDRV and VCIN. Recommended values would be 10Ω and 1µF.

Power Loss and Efficiency

Measurement and Calculation

Refer to Figure 23 for power loss testing method. Power loss calculations are:

P

=(VIN x IIN) + (V5V x I5V) (W)

IN

P P P P EFF EFF

C

x I

SW=VSW

OUT=VOUT

LOSS_MODULE=PIN

LOSS_BOARD=PIN

MODULE

BOARD

VIN

OUT

x I

OUT

=100 x PSW/PIN (%)

=100 x P

I

IN

(W)

- PSW (W)

- P

(W)

OUT

OUT/PIN

V

IN

(%)

FDMF6706C - Extra-Small High-Performance, High-Frequency DrMOS Module

DISB

PWM Input

OFF

ON

OpenDrain Output

VCIN

DISB#

PWM

SMOD

THWN

VDRV

FDMF6706C

CGND

PGND

VIN

R

BOOT

C

VSWH

PHASE

BOOT

VV

SW

L

OUT

Figure 23. Power Loss Measurem ent B lock Diagram

I

OUT

C

OUT

V

OUT

PCB Layout Guidelines

Figure 24 provides an example of a proper layout for the FDMF6706C and critical components. All of the highcurrent paths, such as VIN, V

SWH

, V

OUT

, and GND copper, should be short and wide for low inductance and resistance. This technique aids in achieving a more stable and evenly distributed current flow, along with enhanced heat radiation and system performance.

The following guidelines are recommendations for the PCB designer:

1. Input ceramic bypass capacitors must be placed close to the VIN and PGND pins. This helps reduce the high-current power loop inductance and the input current ripple induced by the power MOSFET switching operation.

2. The V

copper trace serves two purposes. In

SWH

addition to being the high-frequency current path from the DrMOS package to the output inductor, it also serves as a heat sink for the low-side MOSFET in the DrMOS package. The trace should be short and wide enough to present a lowimpedance path for the high-frequency, highcurrent flow between the DrMOS and inductor to minimize losses and temperature rise. Note that the VSWH node is a high voltage and highfrequency switching node with high noise potential. Care should be taken to minimize coupling to adjacent traces. Since this copper trace also acts as a heat sink for the lower FET, balance using the largest area possible to improve DrMOS cooling while maintaining acceptable noise emission.

3. An output inductor should be located close to the

FDMF6706C to minimize the power loss due to the VSWH copper trace. Care should also be taken so the inductor dissipation does not heat the DrMOS.

4. PowerTrench® MOSFETs are used in the output

stage. The Power MOSFETs are effective at minimizing ringing due to fast switching. In most cases, no VSWH snubber is required. If a snubber is used, it should be placed close to the VSWH and PGND pins. The resistor and capacitor need to be of proper size for the power dissipation.

5. VCIN, VDRV, and BOOT capacitors should be

placed as close as possible to the VCIN to CGND, VDRV to CGND, and BOOT to PHASE pins to ensure clean and stable power. Routing width and length should be considered as well.

6. Include a trace from PHASE to VSWH to improve

noise margin. Keep the trace as short as possible.

7. The layout should include the option to insert a small-value series boot resistor between the boot capacitor and BOOT pin. The boot-loop size, including R

BOOT

and C

, should be as small as

BOOT

possible. The boot resistor is normally not required, but is effective at controlling the highside MOSFET turn-on slew rate. This can improve noise operating margin in synchronous buck designs that may have noise issues due to ground bounce or high positive and negative VSWH ringing. Inserting a boot resistance lowers the DrMOS efficiency. Efficiency versus noise tradeoffs must be considered.

The VIN and PGND pins handle large current transients with frequency components greater than 100MHz. If possible, these pins should be connected directly to the VIN and board GND planes. The use of thermal relief traces in series with these pins is discouraged since this adds inductance to the power path. This added inductance in series with either the VIN or PGND pin degrades system noise immunity by increasing positive and negative VSWH ringing.

8. CGND pad and PGND pins should be connected by plane GND copper with multiple vias for stable grounding. Poor grounding can create a noise transient offset voltage level between CGND and PGND. This could lead to faulty operation of gate driver and MOSFET.

9. Ringing at the BOOT pin is most effectively controlled by close placement of the boot capacitor. Do not add an additional BOOT to the PGND capacitor. This may lead to excess current flow through the BOOT diode.

10. The SMOD# and DISB# pins have weak internal

pull-up and pull-down current sources, respectively. These pins should not have any noise filter capacitors. Do not to float these pins unless absolutely necessary.

11. Use multiple vias on each copper area to

interconnect top, inner, and bottom layers to help distribute current flow and heat conduction. Vias should be relatively large and of reasonably low inductance. Critical high-frequency components, such as R

BOOT

, C

, the RC snubber, and

BOOT

bypass capacitors should be located as close to the respective DrMOS module pins as possible on the top layer of the PCB. If this is not feasible, they should be connected from the backside through a network of low-inductance vias.

FDMF6706C - Extra-Small High-Performance, High-Frequency DrMOS Module

Bottom View Top View

Figure 24. PCB Layout Example

Physical Dimensions

0.10 C

2X

6.00

B

A

6.00

PIN#1 INDICATOR

2.50

31

FDMF6706C - Extra-Small High-Performance, High-Frequency DrMOS Module

5.80

4.50

2130

20

0.40

0.65

11

0.35

0.50 (0.70)

0.40

2.00±0.10

0.10

0.08 C

0.40

C

FRONT VIEW

(2.20)

21

20

11

10

(0.20)

BOTTOM VIEW

1.10

0.90

0.30

0.20

TOP VIEW

4.40±0.10

(0.20)

0.05

0.00

DETAIL 'A'

SCALE: 2:1

0.10

2X

SEE DETAIL 'A'

0.10 CAB

0.05

0.30 (40X)

0.20

30

31

2.40±0.10

1.50±0.10

40

1

2.00±0.10

0.50

C

SEATING

PLANE

0.25

1.60

C

40

0.60

0.50 TYP

C

0.20

0.50

0.30

NOTES: UNLESS OTHERWISE SPECIFIED

A) DOES NOT FULLY CONFORM TO JEDEC

REGISTRATION MO-220, DATED

MAY/2005. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. E) DRAWING FILE NAME: PQFN40AREV2

1

2.10

LAND PATTERN

RECOMMENDATION

PIN #1 INDICATOR

(40X)

10

0.15

2.10

Figure 25. 40-Lead, Cli pbond PQFN D rMOS, 6.0x6.0mm Package

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/packaging/

.

FDMF6706C - Extra-Small High-Performance, High-Frequency DrMOS Module

Datasheet FDMF6706C Datasheet (Fairchild)

Specifications and Main Features

Frequently Asked Questions

User Manual