Page 1
FDL100N50F
N-Channel MOSFET,FRFET
500V, 100A, 0.055Ω
FDL100N50F N-Channel MOSFET
May 2009
TM
UniFET
Features
•R
• Low gate charge ( Typ. 238nC)
• Low Crss ( Typ. 64pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
= 0.043Ω ( Typ.)@ VGS = 10V, ID = 50A
DS(on)
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
TO-264
G
SD
MOSFET Maximum Ratings T
Symbol Parameter FDL100N50F Units
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns
P
D
, T
T
J
STG
T
L
*Drain current limited by maximum junction temperature
Drain to Source Voltage 500 V
Gate to Source Voltage ±30 V
Drain Current
Drain Current - Pulsed (Note 1) 400 A
Single Pulsed Avalanche Energy (Note 2) 5000 mJ
Avalanche Current (Note 1) 100 A
Repetitive Avalanche Energy (Note 1) 73.5 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
FDL Series
= 25oC unless otherwise noted
C
-Continuous (T
-Continuous (T
(T
= 25oC) 2500 W
C
- Derate above 25
= 25oC) 100
C
= 100oC) 60
C
o
C20W/
S
300
o
o
Thermal Characteristics
Symbol Parameter Min. Max. Units
R
θJC
θCS
R
θJA
Thermal Resistance, Junction to Case - 0.05
Thermal Resistance, Case to Sink Typ. 0.1 -
Thermal Resistance, Junction to Ambient - 30
o
C/WR
A
o
C
C
C
©2009 Fairchild Semiconductor Corporation
FDL100N50F Rev. A
www.fairchildsemi.com1
Page 2
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDL100N50F FDL100N50F TO-264 - - 30
FDL100N50F N-Channel MOSFET
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC = 25oC 500 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
I
= 250µA, Referenced to 25oC-0.5-V/
D
V
= 500V, V
DS
= 400V, TC = 125oC - - 100
V
DS
= 0V - - 10
GS
= 0V - - ±100 nA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250µA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 50A - 0.043 0.055 Ω
Forward Transconductance VDS = 20V, ID = 50A (Note 4) -95-S
Dynamic Characteristics
C
C
C
Q
Q
Q
iss
oss
rss
g(tot)
gs
gd
Input Capacitance
Output Capacitance - 1700 - pF
Reverse Transfer Capacitance - 64 - pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 74 - nC
Gate to Drain “Miller” Charge - 95 - nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 186 - ns
Turn-Off Delay Time - 202 - ns
Turn-Off Fall Time - 105 - ns
= 25V, VGS = 0V
V
DS
f = 1MHz
= 400V, ID = 50A
V
DD
V
= 10V
GS
V
= 250V, ID = 50A
DD
R
= 4.7Ω
G
- 12000 - pF
- 238 - nC
-63-ns
µA
o
C
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, I
3. I
≤ 100A, di/dt ≤ 200A/µs, VDD ≤ BV
SD
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDL100N50F Rev. A
Maximum Continuous Drain to Source Diode Forward Current - - 100 A
Maximum Pulsed Drain to Source Diode Forward Current - - 400 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 1.5 - nC
= 100A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/µs
F
= 100A - - 1.5 V
SD
SD
2
= 100A
- 250 - ns
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Page 3
Typical Performance Characteristics
FDL100N50F N-Channel MOSFET
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
300
V
=
15.0 V
GS
10.0 V
8.0 V
100
7.0 V
6.5 V
6.0 V
10
400
100
150oC
25oC
10
, Drain Current[A]
D
I
*Notes:
µ
s Pulse Test
1
0.5
0.1 1 10
1. 250
2. T
= 25oC
C
VDS, Drain-Source Voltage[V]
, Drain Current[A]
D
I
1
46810
-55oC
*Notes:
= 20V
1. V
DS
µ
s Pulse Test
2. 250
VGS, Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
0.07
0.06
,
]
Ω
[
0.05
DS(ON)
R
0.04
Drain-Source On-Resistance
0.03
0 50 100 150 200 250
ID, Drain Current [A]
VGS = 10V
VGS = 20V
*Note: TC = 25oC
300
100
150oC
10
, Reverse Drain Current [A]
S
I
1
0.0 0.5 1.0 1.5
25oC
*Notes:
1. VGS = 0V
2. 250
µ
s Pulse Test
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
30000
25000
20000
15000
10000
Capacitances [pF]
5000
0
10
FDL100N50F Rev. A
C
iss
C
oss
C
C
C
C
-1
rss
oss
iss
rss
110
VDS, Drain-Source Voltage [V]
= Cgs + Cgd (Cds = shorted
= Cds + C
gd
= C
gd
*Note:
1. V
= 0V
GS
2. f = 1MHz
)
30
10
VDS = 100V
V
= 250V
8
V
DS
= 400V
DS
6
4
, Gate-Source Voltage [V]
GS
V
2
0
0 50 100 150 200 250
Qg, Total Gate Charge [nC]
3
*Note: ID = 50A
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Page 4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
1.2
1.1
3.0
2.5
2.0
FDL100N50F N-Channel MOSFET
1.0
, [Normalized]
DSS
BV
0.9
Drain-Source Breakdown Voltage
0.8
-100 -50 0 50 100 150 200
TJ, Junction Temperature
*Notes:
1. V
2. I
D
o
[
C
]
= 0V
GS
= 1mA
1.5
, [Normalized]
1.0
DS(on)
R
Drain-Source On-Resistance
0.5
0.0
-100 -50 0 50 100 150 200
*Notes:
1. V
2. I
TJ, Junction Temperature
= 10V
GS
= 50A
D
o
[
C
]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
1000
100
DC
10ms
10
Operation in This Area
is Limited by R
1
, Drain Current [A]
D
I
0.1
0.01
1 10 100 1000
DS(on)
*Notes:
= 25oC
1. T
C
2. T
= 150oC
J
3. Single Pulse
VDS, Drain-Source Voltage [V]
1ms
100µs
30µs
vs. Case Temperature
120
100
80
60
40
, Drain Current [A]
D
I
20
0
25 50 75 100 125 150
TC, Case Temperature
o
[
C
]
Figure 11. Transient Thermal Response Curve
0.1
FDL100N50F Rev. A
]
JC
θ
Z
[
0.001
Thermal Response
0.0001
0.01
0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
-5
10
P
DM
t
1
t
2
*Notes:
(t) = 0.05oC/W Max.
1. Z
θ
JC
2. Duty Factor, D= t
3. TJM - TC = PDM * Z
-4
10
-3
10
-2
10
1/t2
(t)
θ
JC
-1
10
1
Rectangular Pulse Duration [sec]
4
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Page 5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
FDL100N50F N-Channel MOSFET
FDL100N50F Rev. A
Unclamped Inductive Switching Test Circuit & Waveforms
5
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Page 6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
g
g
+
+
V
V
DS
DS
_
_
L
LL
Same Type
Same Type
as DU T
as DU T
• dv/dt controlled by R
• dv/dt controlled by R
•ISDcontrolled by pulse period
•ISDcontrolled by pulse period
G
G
V
V
GS
GS
R
R
Driver
Driver
G
G
DUT
DUT
I
I
SD
SD
V
V
DD
DD
FDL100N50F N-Channel MOSFET
V
V
GS
GS
( D riv e r )
( D riv e r )
I
I
SD
SD
( DUT )
( DUT )
V
V
DS
DS
( DUT )
( DUT )
G ate Pulse W idth
G ate Pulse W idth
G ate Pulse W idth
--------------------------
--------------------------
--------------------------
D =
D =
D =
Gate Pulse Period
Gate Pulse Period
Gate Pulse Period
IFM, Body Diode Forw ard Current
IFM, Body Diode Forw ard Current
I
I
RM
RM
Body D iode Reverse C urrent
Body D iode Reverse C urrent
Body Diode R ecovery dv/dt
Body Diode R ecovery dv/dt
V
V
SD
SD
Body D iode
Body D iode
e D rop
Forw ard Volta
Forw ard Volta
e D rop
di/dt
di/dt
10V
10V
V
V
DD
DD
FDL100N50F Rev. A
6
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Page 7
Mechanical Dimensions
FDL100N50F N-Channel MOSFET
FDL100N50F Rev. A
Dimensions in Millimeters
7
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Page 8
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®
tm
tm
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intended to be an exhaustive list of all such trademarks.
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®
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDL100N50F MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FDL100N50F Rev. A
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I40
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