Page 1
T
FDG6331L
Integrated Load Switch
FDG6331L
April 2001
General Description
This device is particularly suited for compact power
management in portable electronic equipment where
2.5V to 8V input and 0.8A output current capability are
needed. This load switc h integrates a sm all N-Channel
Features
• –0.8 A, –8 V. R
R
R
= 260 mΩ @ VGS = –4.5 V
DS(ON)
= 330 mΩ @ VGS = –2.5 V
DS(ON)
= 450 mΩ @ VGS = –1.8 V
DS(ON)
power MOSFET (Q1) that drives a large P-Channel
power MOSFET (Q2) in one tiny SC70-6 package.
• Control MOSFET (Q1) includes Zener protection for
ESD ruggedness (>6KV Human body model)
Applications
• Power management
• Load switch
Vin,R1
ON/OFF
Pin 1
R1,C1
SC70-6
Absolute Maximum Ratings T
4
5
6
See Application Circuit
o
=25
C unless otherwise noted
A
• High performance trench te chnology for extremely
low R
DS(ON)
• Compact industry s t andard SC70-6 surface mount
package
Q2
Q1
3
2
1
Vout,C1
Vout,C1
R2
Equivalent Circuit
IN OU
+–
V
DROP
ON/OFF
Symbol Parameter Ratings Units
VIN Gate-Source Voltage (Q2)
V
Gate-Source Voltage (Q1) –0.5 to 8 V
ON/OFF
I
Load Current – Continuous (Note 2) –0.8 A
Load
± 8
– Pulsed (Note 2) –2.4
PD
TJ, T
STG
Maximum Power Dissipation
Operating and Storage Junction Temperature Range –55 to +150
(Note 1) 0.3
V
W
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 415
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.31 FDG6331L 7’’ 8mm 3000 units
2001 Fairchild Semiconductor Corporation
FDG6331L Rev B(W)
Page 2
FDG6331L
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVIN Vin Breakdown Voltage
I
Zero Gate Voltage Drain Current VIN = –6.4 V, V
Load
IFL Leakage Current, Forward V
IRL Leakage Current, Reverse V
= 0 V, ID = –250 µA
V
ON/OFF
= 0 V, VIN = 8 V 100 nA
ON/OFF
= 0 V, VIN = –8 V –100 nA
ON/OFF
= 0 V –1
ON/OFF
8 V
On Characteristics (Note 2)
V
R
Gat e Threshold Voltage
ON/OFF (th)
Static Drain–Source
DS(on)
On–Resistance (Q2)
R
Static Drain–Source
DS(on)
On–Resistance (Q1)
= V
V
IN
V
= 4.5 V, ID = –0.8 A
IN
=2.5 V, ID = –0.7 A
V
IN
= 1.8 V, ID = –0.6 A
V
IN
= 4.5 V, ID = 0.4A
V
IN
= 2.7 V, ID = 0.2 A
V
IN
, ID = –250 µA
ON/OFF
0.4 0.9 1.5 V
155
193
248
310
380
260
330
450
400
500
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –0.25 A
VSD Drain–Source Diode Forward
V
= 0 V, IS = –0.25 A(Note 2) –1.2 V
ON/OFF
Voltage
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
is guaranteed by design while R
θJC
is determined by the user’s board design.
θJA
µA
mΩ
mΩ
FDG6331L Load Switch Application Circuit
R1
Q1
Q2
OUT
C1
LOAD
IN
ON/OFF
R2
External Component Recommendation:
For additional in-rush current cont rol , R2 and C1 can be added. For more information, see application note A N1030.
FDG6331L Rev B (W)
Page 3
Typical Characteristics
1
VIN = -1.8V
0.8
0.6
, (V)
DROP
0.4
-V
0.2
= -1.5-8V
V
ON/OFF
PW = 300us, D <
2%
TJ = 125OC
TJ = 25OC
1
0.8
0.6
, (V)
DROP
0.4
-V
0.2
VIN = -2.5V
V
= -1.5-8V
ON/OFF
PW = 300us, D <
FDG6331L
2%
TJ = 125OC
TJ = 25OC
0
0 0.4 0.8 1.2 1.6 2 2.4
-I
, (A)
L
Figure 1. Conduction Voltage Drop
Variation with Load Current.
1
VIN = -4.5V
= -1.5-8V
V
ON/OFF
0.8
PW = 300us, D <
0.6
, (V)
DROP
0.4
-V
0.2
0
0 0.4 0.8 1.2 1.6 2 2.4
2%
TJ = 125OC
TJ = 25OC
-I
, (A)
L
Figure 3. Conduction Voltage Drop
Variation with Load Current.
0
0 0.4 0.8 1.2 1.6 2 2.4
-I
, (A)
L
Figure 2. Conduction Voltage Drop
Variation with Load Current.
0.6
0.5
0.4
0.3
, ON-RESISTANCE (Ω)
0.2
DS(ON)
R
0.1
0
1.25 2 2.75 3.5 4.25 5
TJ = 25OC
TJ = 125OC
, INPUT VOLTAGE (V)
-V
IN
Figure 4. On-Resistance Variation
With Input Voltage
IL = -1A
= 1.5 - 8V
V
ON/OFF
PW = 300us, D <
2%
FDG6331L Rev B (W)
Page 4
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
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PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H1
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