Datasheet FDG6320C Datasheet (Fairchild Semiconductor)

November 1998

FDG6320C
Dual N & P Channel Digital FET

General Description Features

These dual N & P-Channel logic level enhancement mode
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. This device has been designed
especially for low voltage applications as a replacement for
bipolar digital transistors and small signal MOSFETS. Since
bias resistors are not required, this dual digital FET can
replace several different digital transistors, with different bias
resistor values.

SC70-6

SOT-23

SuperSOTTM-6

S2

G2

D1

.20

D2

SC70-6

pin

1

G1

S1

N-Ch 0.22 A, 25 V, R
R

P-Ch -0.14 A, -25V, R
R

Very small package outline SC70-6.
Very low level gate drive requirements allowing direct

operation in 3 V circuits (V
Gate-Source Zener for ESD ruggedness

(>6kV Human Body Model).

SOT-8

1

2

3

= 4.0 Ω @ VGS= 4.5 V,

DS(ON)

= 5.0 Ω @ VGS= 2.7 V.

DS(ON)

= 10 Ω @ VGS= -4.5V,

DS(ON)

= 13 Ω @ VGS= -2.7V.

DS(ON)

< 1.5 V).

GS(th)

SO-8

SOIC-14

6

5

4

Absolute Maximum Ratings T

Symbol Parameter N-Channel P-Channel Units

V

S

DS

V

GSS

I

D

P

D

TJ,T

STG

ESD Electrostatic Discharge Rating MIL-STD-883D

THERMAL CHARACTERISTICS

R

θJA

© 1998 Fairchild Semiconductor Corporation

Drain-Source Voltage 25 -25 V
Gate-Source Voltage 8 -8 V

Drain Current - Continuous 0.22 -0.14 A

- Pulsed 0.65 -0.4
Maximum Power Dissipation (Note 1) 0.3 W
Operating and Storage Temperature Ranger -55 to 150 °C

Human Body Model (100pf / 1500 Ohm)

Thermal Resistance, Junction-to-Ambient (Note 1) 415 °C/W

= 25oC unless other wise noted

A

6 kV

FDG6320C Rev. D

Electrical Characteristics (T

= 25 OC unless otherwise noted )

A

Symbol Parameter Conditions
OFF CHARACTERISTICS

BV

DSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA N-Ch 25 V

VGS = 0 V, ID = -250 µA

∆BV

DSS

Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC N-Ch 25 mV/oC

/∆T

J

ID = -250 µA, Referenced to 25 oC

I

DSS

I

DSS

I

GSS

Zero Gate Voltage Drain Current V

Zero Gate Voltage Drain Current

Gate - Body Leakage Current

= 20 V, V

DS

VDS =-20 V, V

VGS = 8 V, V
VGS = -8 V, V

ON CHARACTERISTICS (Note 2)

V

GS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA
VDS = VGS, ID = -250 µA P-Ch -0.65 -0.82 -1.5

∆V

GS(th)

Gate Threshold Voltage Temp. Coefficient

/∆T

J

ID = 250 µA, Referenced to 25 oC
ID = -250 µA, Referenced to 25 oC P-Ch 2.1

R

DS(ON)

Static Drain-Source On-Resistance

VGS = 4.5 V, ID = 0.22 A

VGS = 2.7 V, ID = 0.19 A
VGS = -4.5 V, ID = -0.14 A P-Ch 7.3 10

VGS = -2.7 V, ID = -0.05 A 10.4 13

I

D(ON)

On-State Drain Current

VGS = 4.5 V, VDS = 5 V
VGS = -4.5 V, VDS = -5 V P-Ch -0.14

g

FS

Forward Transconductance

VDS = 5 V, ID = 0.22 A
VDS = -5 V, ID = -0.14 A P-Ch 0.12

DYNAMIC CHARACTERISTICS

C

iss

C

oss

Input Capacitance N-Channel N-Ch 9.5 pF

V

= 10 V, V

DS

Output Capacitance f = 1.0 MHz N-Ch 6

P-Channel P-Ch 7

C

rss

Reverse Transfer Capacitance

V

= -10 V, VGS = 0 V,

DS

f = 1.0 MHz P-Ch 1.5

Min Typ Max Units

Type

P-Ch -25

P-Ch -19

= 0 V, N-Ch 1 µA

GS

TJ = 55°C 10

GS

= 0 V,

P-Ch -1 µA

TJ = 55°C -10

= 0 V

DS

= 0 V P-Ch -100 nA

DS

N-Ch 100 nA

N-Ch 0.65 0.85 1.5 V

N-Ch -2.1

N-Ch 2.6 4

TJ =125°C 5.3 7

3.7 5

TJ =125°C

11 17

N-Ch 0.22 A

N-Ch 0.2 S

GS

= 0 V,

P-Ch 12

N-Ch 1.3

mV/oC

Ω

FDG6320C Rev. D

Electrical Characteristics (continued)

SWITCHING CHARACTERISTICS (Note 2)
Symbol Parameter Conditions

t

D(on)

Turn - On Delay Time N-Channel N-Ch 5 12 nS

Type

VDD = 5 V, ID = 0.5 A , P-Ch 5 12

t

r

Turn - On Rise Time

VGS = 4.5 V, R

GEN

= 50 Ω

N-Ch 4.5 10 nS
P-Ch 8 16

t

D(off)

Turn - Off Delay Time P-Channel N-Ch 4 8 nS

VDD = -5 V, ID = -0.5 A, P-Ch 9 18

t

f

Turn - Off Fall Time

VGS = -4.5 V, R

= 50 Ω

GEN

N-Ch 3.2 7 nS
P-Ch 5 12

Q

g

Q

gs

Total Gate Charge N-Channel N-Ch 0.29 0.4 nC

V

= 5 V, ID = 0.22 A,

DS

P-Ch 0.22 0.31

Gate-Source Charge VGS = 4.5 V N-Ch 0.12 nC

P- Channel P-Ch 0.12

Q

gd

Gate-Drain Charge

VDS = -5 V, ID = -0.14 A,
VGS = -4.5 V

N-Ch 0.03 nC
P-Ch 0.05

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

Maximum Continuous Drain-Source Diode Forward Current N-Ch 0.25 A

P-Ch -0.25

V

SD

Notes:

1. R
design while R

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.5 A

VGS = 0 V, IS = -0.5 A

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

JA

θ

is determined by the user's board design. R

CA

θ

= 415OC/W on minimum mounting pad on FR-4 board in still air.

JA

θ

(Note 2) N-Ch 0.8 1.2 V

(Note 2)

P-Ch -0.8 -1.2

Min Typ Max Units

is guaranteed by

JC

θ

FDG6320C Rev. D

Typical Electrical Characteristics: N-Channel

0.5

0.4

0.3

0.2

0.1

D

I , DRAIN-SOURCE CURRENT (A)

V =4.5V

GS

3.5V

3.0V

2.7V

2.5V

2.0V

0

0 1 2 3 4 5

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1. On-Region Characteristics.

1.8

I = 0.22A

D

1.6

V = 4.5V

GS

1.4

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

5

4.5

4

V = 2.5V

GS

2.7V

3.0V

3.5

3

DS(ON)

R , NORMALIZED

2.5

DRAIN-SOURCE ON-RESISTANCE

2

0 0.1 0.2 0.3 0.4

I , DRAIN CURRENT (A)

D

3.5V

4.0V

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

20

16

12

8

T =125°C

4

DS(ON)

R , ON-RESISTANCE(OHM)

0

1 2 3 4 5

V ,GATE TO SOURCE VOLTAGE (V)

GS

A

25°C

4.5V

I = 0.10A

D

5.0V

Figure 3. On-Resistance Variation

with Temperature.

0.2

V = 5V

DS

0.15

0.1

0.05

D

I , DRAIN CURRENT (A)

0

0.5 1 1.5 2 2.5 3
V , GATE TO SOURCE VOLTAGE (V)

GS

Figure 5. Transfer Characteristics.

T = -55°C

J

25°C

125°C

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0.4

V = 0V

GS

0.1

T = 125°C

0.01

0.001

S

I , REVERSE DRAIN CURRENT (A)

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

V , BODY DIODE FORWARD VOLTAGE (V)

SD

J

25°C

-55°C

Figure 6. Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDG6320C.Rev D

Typical Electrical Characteristics: N-Channel (continued)

6

I = 0.22A

D

5

4

3

2

1

GS

V , GATE-SOURCE VOLTAGE (V)

0

0 0.1 0.2 0.3 0.4 0.5 0.6

V = 5V

DS

Q , GATE CHARGE (nC)

g

10V

Figure 7. Gate Charge Characteristics.

1

10ms

0.3

RDS(ON) LIMIT

0.1

V = 4.5V

GS

SINGLE PULSE

0.03

D

I , DRAIN CURRENT (A)

0.01

JA

R = 415 °C/W

θ

T = 25°C

A

0.4 0.8 2 5 10 25 40
V , DRAIN-SOURCE VOLTAGE (V)

DS

100ms

1s

10s

DC

30

15

C

8

5

CAPACITANCE (pF)

f = 1 MHz

3

V = 0 V

GS

2

0.1 0.3 1 3 10 25
V , DRAIN TO SOURCE VOLTAGE (V)

DS

iss

C

oss

C

rss

Figure 8. Capacitance Characteristics.

50

40

30

20

POWER (W)

10

0

0.0001 0.001 0.01 0.1 1 10 200
SINGLE PULSE TIME (SEC)

SINGLE PULSE

R =415°C/W

JA

θ

T = 25°C

A

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum Power

Dissipation.

FDG6320C.Rev D

Typical Electrical Characteristics: P-Channel

0.2

0.15

V = -4.5V

GS

-3.5V

-3.0V

-2.7V

0.1

0.05

D

-I , DRAIN-SOURCE CURRENT (A)
0

0 1 2 3 4

-V , DRAIN-SOURCE VOLTAGE (V)

DS

-2.5V

Figure 11. On-Region Characteristics.

1.6

I = -0.14A

D

V = -4.5V

1.4

GS

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

-2.0V

2.5

V = -2.0V

GS

2

-2.5V

-2.7V

1.5

DS(ON)

1

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.5
0 0.05 0.1 0.15 0.2

-I , DRAIN CURRENT (A)

D

-3.0V

-3.5V

-4.0V

-4.5V

Figure 12. On-Resistance Variation with

Drain Current and Gate Voltage.

25

20

15

10

5

DS(ON)

R , ON-RESISTANCE (OHM)

0

1.5 2 2.5 3 3.5 4 4.5 5

-V , GATE TO SOURCE VOLTAGE (V)

GS

I = -0.07A

D

T = 125°C

A

T = 25°C

A

Figure 13. On-Resistance Variation

with Temperature.

0.14

V = -5.0V

DS

0.12

0.1

0.08

0.06

0.04

D

-I , DRAIN CURRENT (A)

0.02

0

0 1 2 3 4

-V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

A

25°C

125°C

Figure 15. Transfer Characteristics.

Figure 14. On-Resistance Variation with

Gate-to-Source Voltage.

0.3

V = 0V

GS

0.1

T = 125°C

A

25°C

0.01

0.001

S

-I , REVERSE DRAIN CURRENT (A)

0.0001

0.2 0.4 0.6 0.8 1 1.2

-V , BODY DIODE FORWARD VOLTAGE (V)

SD

-55°C

Figure 16. Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDG6320C.Rev D

Typical Electrical Characteristics: P-Channel (continued)

8

I = -0.14A

D

6

4

2

GS

-V , GATE-SOURCE VOLTAGE (V)
0

0 0.1 0.2 0.3 0.4 0.5

V = -5V

DS

-10V

Q , GATE CHARGE (nC)

g

-15V

Figure 17. Gate Charge Characteristics.

1

10ms

0.3

RDS(ON) LIMIT

0.1

V = -4.5V

0.03

D

-I , DRAIN CURRENT (A)

0.005

GS

SINGLE PULSE

R = See Note 1b

JA

θ

T = 25°C

A

1 2 3 5 10 20 40

- V , DRAIN-SOURCE VOLTAGE (V)

DS

100ms

1s

10s

DC

40

20

C

10

5
3

CAPACITANCE (pF)

1

f = 1 MHz
V = 0 V

GS

0.5

0.1 0.2 0.5 1 2 5 10 20

-V , DRAIN TO SOURCE VOLTAGE (V)

DS

iss

C

oss

C

rss

Figure 18. Capacitance Characteristics.

50

40

30

20

POWER (W)

10

0

0.0001 0.001 0.01 0.1 1 10 200
SINGLE PULSE TIME (SEC)

SINGLE PULSE

R =415°C/W

JA

θ

T = 25°C

A

Figure 19. Maximum Safe Operating Area.

Figure 20. Single Pulse Maximum Power

Dissipation.

FDG6320C.Rev D

Typical Thermal Characteristics: N & P-Channel (continued)

1

D = 0.5

0.5

0.2

0.2

0.1

0.1

0.05

0.02

0.01

r(t), NORMALIZED EFFECTIVE

0.005

TRANSIENT THERMAL RESISTANCE

0.002

0.05

0.02

0.01
Single Pulse

0.0001 0.001 0.01 0.1 1 10 100 200

Figure 21. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in note 1.

Transient thermalresponse will change depending on the circuit board design.

t , TIME (sec)

1

R (t) = r(t) * R

JA

θ

R =415

JA

θ

P(pk)

t

1

t

2

T - T = P * R (t)

J

A

Duty Cycle, D = t / t

°C/W

JA

θ

1 2

JA

θ

FDG6320C.Rev D

SC70-6 Tape and Reel Data and Package Dimensions

SC70-6 Packaging
Configuration: Figure 1.0

SC70-6 Packaging Information

Packaging Option
Packaging type

Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel (kg)

Note/Comments

Customized Label

Standard

(no flow code)

184x187x47 343x343x64

0.0055 0.0055

0.1140 0.3960

D87Z

TNR

3,000 10,000

TNR

7" Dia

9,000 30,000

13"

Antistatic Cover Tape

F63TNR
Label

Static Dissipati v e

Embos s e d Car rier Tape

Intermediate box for D87Z Option

Packaging Description:

SC70-6 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 uni ts p er 7 " or 17 7cm di amet er re el. The reels are
dark blue in color and is made of polystyrene plastic (anti­static coated). Other option comes in 10,000 units per 13"
or 330cm diam eter reel. T his a nd some othe r opti ons ar e
described in the Packaging Information table.

These full reels are individually barcode labeled and
placed inside a pizza box (illustrated in figur e 1.0) m ade of
recyclable corrugated brown paper with a Fairchild logo
printi ng. One pizza box contain s three r eels maximu m.
And these pizza boxes are placed inside a barcode
labeled shipping box which comes in different sizes
depending on the number of parts shipped.

21 21 21 21

SC70-6 Unit Orientation

343mm x 342mm x 64mm

21

Pin 1

F63TNR Barcode Label

184mm x 187mm x 47mm

Pizza Box for Standard Option

SC70-6 Tape Leader and Trailer
Configuration: Figure 2.0

Carrier Tape

Cover Tape

Trailer Tape
300mm minimum or
75 empty pockets

F63TNR
Label

F63TNR
Label

Components

F63TNR Label sample

LOT: CBVK741B019

FSID: FDG6302P

D/C1: D9842 QTY1: SPEC REV:
D/C2: QTY2: CPN:

QTY: 3000

SPEC:

N/F: F (F63TNR)3

Leader Tape
500mm minimum or
125 empty pockets

August 1999, Rev. C

SC70-6 Tape and Reel Data and Package Dimensions, continued

SC70-6 Embossed Carrier Tape
Configuration: Figure 3.0

T

K0

Wc

B0

P0

D0

E1

F

W

E2

Tc

A0

D1

P1

User Direction of Feed

Dimensions are in millimeter

Pkg type

SC70-6

(8mm)

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

SC70-6 Reel Configuration: Figure 4.0

A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

2.24

2.34

8.0

1.55

1.125

1.75

6.25

+/-0.10

+/-0.10

+/-0.3

+/-0.05

+/-0.125

+/-0.10

rotational and lateral movement requirements (see sketches A, B, and C).

B0

20 deg maximum component rotation

Sketch A (Side or Front Sectional View)

Component Rotation

3.50

min

+/-0.05

20 deg maximum

A0

Sketch B (Top View)

Component Rotation

W1 Measured at Hub

4.0
+/-0.1

Typical
component
cavity
center line

Typical
component
center line

Dim A

Max

4.0
+/-0.1

1.20

0.255
+/-0.150

5.2
+/-0.3

0.5mm
maximum

+/-0.10

0.5mm
maximum

Sketch C (Top View)

Component lateral movement

0.06
+/-0.02

Dim A

max

Tape Size

8mm 7" Dia

8mm 13" Dia

Reel

Option

Dim N

Diameter Option

7"

See detail AA

B Min

Dim C

13" Diameter Option

See detail AA

W2 max Measured at Hub

Dim D

W3

min

DETAIL AA

Dimensions are in inches and millimeters

Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

7.00

0.059

177.8

13.00
330

1.5

0.059

1.5

0.512 +0.020/-0.008
13 +0.5/-0.2

0.512 +0.020/-0.008
13 +0.5/-0.2

0.795

2.165550.331 +0.059/-0.000

20.2

0.795

4.00

20.2

100

8.4 +1.5/0

0.331 +0.059/-0.000

8.4 +1.5/0

0.567

14.4

0.567

14.4

0.311 – 0.429

7.9 – 10.9

0.311 – 0.429

7.9 – 10.9

July 1999, Rev. C

SC70-6 Tape and Reel Data and Package Dimensions, continued

SC70-6 (FS PKG Code 76)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.0055

September 1998, Rev. A1

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
CoolFET™
CROSSVOLT™

2

CMOS

E

TM

FACT™
FACT Quiet Series™

®

FAST
FASTr™
GTO™
HiSeC™

ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QFET™
QS™

Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8

TinyLogic™
UHC™
VCX™

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
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As used herein:

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systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.