Datasheet FDG6316P Datasheet (Fairchild Semiconductor)

December 2001

FDG6316P

P-Channel 1.8V Specified PowerTrench



MOSFET

FDG6316P

General Description

This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.

Applications

• Battery management

• Load switch

S

G

D

D

Pin 1

G

S

SC70-6

The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.

Features

• –0.7 A, –12 V. R

R

R

• Low gate charge

• High performance trench technology for extremely

low R

• Compact industry standard SC70-6 surface mount

package

DS(ON)

S

G

D

1 or 4

2 or 5

3 or 6

= 270 mΩ @ VGS = –4.5 V

DS(ON)

= 360 mΩ @ VGS = –2.5 V

DS(ON)

= 650 mΩ @ VGS = –1.8 V

DS(ON)

D

6 or 3

G

5 or 2

4 or 1

S

Absolute Maximum Ratings T

o

=25

C unless otherwise noted

A

Symbol Parameter Ratings Units

V

Drain-Source Voltage –12 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1) –0.7 A

– Pulsed –1.8

PD Power Dissipation for Single Operation (Note 1) 0.3 W

TJ, T

Operating and Storage Junction Temperature Range –55 to +150

STG

± 8

V

°C

Thermal Characteristics

R

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1) 415

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

2001 Fairchild Sem iconductor Corporation

.16 FDG6316P 7’’ 8mm 3000 units

FDG6316P Rev D W )

FDG6316P

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

Drain–Source Breakdown

DSS

Voltage

∆BVDSS
∆T

J

I

Zero Gate Voltage Drain Current VDS = –10 V, VGS = 0 V –1

DSS

I

Gate–Body Leakage, Forward VGS = –8 V, VDS = 0 V –100 nA

GSSF

I

GSSR

Breakdown Voltage Temperature
Coefficient

Gate–Body Leakage, Reverse VGS = 8 V, VDS = 0 V 100 nA

V

= 0 V, ID = –250 µA

GS

= –250 µA, Referenced to 25°C

I

D

–12 V

–3.7

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current VGS = –4.5 V, VDS = –5 V –1.8 A

D(on)

V

= VGS, ID = –250 µA

DS

I

= –250 µA, Referenced to 25°C

D

VGS = –4.5 V, ID = –0.7 A

= –2.5 V, ID = –0.5 A

V

GS

V

= –1.8 V, ID = –0.4 A

GS

= –4.5 V, ID = –0.7 A, TJ=125°C

V

GS

–0.4 –0.6 –1.5 V

2

221

297
427
250

270
360
650
348

mV/°C

mΩ

gFS Forward Transconductance VDS = –5 V, ID = –0.7 A 2.5 S

Dynamic Characteristics

C

Input Capacitance 146 pF

iss

C

Output Capacitance 60 pF

oss

C

Reverse Transfer Capacitance

rss

= –6 V, V

V

DS

f = 1.0 MHz

= 0 V,

GS

48 pF

Switching Characteristics (Note 2)

V

= –6 V, ID = 1 A,

t

Turn–On Delay Time 5 10 ns

d(on)

tr Turn–On Rise Time 13 23 ns

t

Turn–Off Delay Time 8 16 ns

d(off)

tf Turn–Off Fall Time

Qg Total Gate Charge 1.7 2.4 nC

Qgs Gate–Source Charge 0.3 nC

Qgd Gate–Drain Charge

DD

= –4.5 V, R

V

GS

V

= –6 V, ID = –0.7 A,

DS

V

= –4.5 V

GS

GEN

= 6 Ω

2 4 ns

0.4 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –0.25 A

VSD Drain–Source Diode Forward

Voltage

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

PCB on still air environment

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

is guaranteed by design while R

θJC

VGS = 0 V, IS = –0.25 A(Note 2) –0.7 –1.2 V

is determined by the user's board design. R

θJA

= 415°C/W when mounted on a minimum pad of FR-4

θJA

FDG6316P Rev D (W )

)

)

Typical Characteristics

FDG6316P

2

VGS=-4.5V

-2.5V

1.5

1

, DRAIN CURRENT (A)

D

0.5

-I

0

00.511.522.533.5

-2.0V

, DRAIN TO SOURCE VOLTAGE (V)

-V

DS

-1.8V

-1.5V

3

VGS=-1.5V

2.6

2.2

1.8

, NORMALIZED

1.4

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.6
0 0.5 1 1.5 2

-1.8V

-2.0V

-2.5V

-I

, DRAIN CURRENT (A)

D

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.4

ID = -0.7A

1.3
= -4.5V

V

GS

1.2

1.1

1

, NORMALIZED

DS(ON)

0.9

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.7

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEM PERATURE (oC)

0.75

0.65

0.55

0.45

0.35

, ON-RESISTANCE (OHM)

TA = 25oC

DS(ON)

0.25

R

0.15
12345

TA = 125oC

, GATE TO SOURCE VOLTAGE (V)

-V

GS

-3.0V

-4.5V

ID = -0.4A

Figure 3. On-Resistance Variation with

Temperature.

2

VDS = -5V

1.5

1

, DRAIN CURRENT (A

0.5

D

-I

0

0.5 1 1.5 2

-VGS, GATE TO SOURCE VOLTAGE (V)

TA = -55oC

-125oC

25oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

10

VGS = 0V

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A

S

-I

0.0001

00.20.40.60.811.2

TA = 125oC

25oC

-55oC

-VSD, BODY DIODE F ORWARD VOLTAGE ( V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDG6316P Rev D (W )

)

T

)

Typical Characteristics

FDG6316P

5

ID = -0.7A

4

3

2

1

, GATE-SOURCE VOLTAGE ( V)

GS

-V

0

00.511.52

, GATE CHARGE (nC)

Q

g

VDS = -4V

-6V

-8V

250

200

C

150

100

CAPACITANCE (pF)

50

0

024681012

-VDS, DRAIN TO SOURCE VOLTAGE (V)

ISS

C

OSS

C

RSS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

10

R

LIMIT

DS(ON)

1

100ms

1s

VGS = -4.5V

0.1
SINGLE PULSE

, DRAIN CURRENT (A

D

-I

0.01

= 415oC/W

R

θ

JA

T

= 25oC

A

0.1 1 10 100

-VDS, DRAIN-SOURCE VOLTAGE (V)

DC

100µs

1ms

10ms

10

SINGLE PULSE
R

8

6

4

2

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100

t1, TIME (sec)

θ

= 415°C/W

JA

T

= 25°C

A

f = 1 MHz

= 0 V

V

GS

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

r(t), NORMALIZED EFFECTIVE TRANSIEN

THERMAL RESISTANCE

0.001

0.1

0.01

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

R

(t) = r(t) * R

θJA

R

= 415oC/W

θJA

P(pk

t

1

t

2

T

- TA = P * R

J

Duty Cycle, D = t

θJA

(t)

JA

θ

/ t

1

2

0.0001 0.001 0.01 0.1 1 10 100

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.

FDG6316P Rev D (W )

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna

TM

TM

FACT™
FACT Quiet Series™

STAR*POWER is used under license

FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™



OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench



QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER

SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™



UltraFET

VCX™



DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4