Datasheet FDG330P Datasheet (Fairchild Semiconductor)

December 2001

FDG330P

P-Channel 1.8V Specified PowerTrench



MOSFET

FDG330P

General Description

This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.

Applications

• Battery management

• Load switch

Features

• –2 A, –12 V. R

R

R

• Low gate charge

• High performance trench technology for extremely

low R

• Compact industry standard SC70-6 surface mount

package

DS(ON)

= 110 mΩ @ VGS = –4.5 V

DS(ON)

= 150 mΩ @ VGS = –2.5 V

DS(ON)

= 215 mΩ @ VGS = –1.8 V

DS(ON)

S

D

D

G

Pin 1

SC70-6

D

D

Absolute Maximum Ratings T

o

=25

C unless otherwise noted

A

1

2

3

3

6

5

4

Symbol Parameter Ratings Units

V

Drain-Source Voltage –12 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a) –2 A

– Pulsed –6

Power Dissipation for Single Operation (Note 1a) 0.75 W PD

TJ, T

Operating and Storage Junction Temperature Range –55 to +150

STG

(Note 1b)

± 8

0.48

V

°C

Thermal Characteristics

R

θJA

Thermal Resistance, Junction-to-Ambient

Note 1b) 260

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

2001 Fairchild Sem iconductor Corporation

.30 FDG330P 7’’ 8mm 3000 units

°C/W

FDG330P Rev D (W )

FDG330P

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS
∆T

I

Zero Gate Voltage Drain Current VDS = –10 V, VGS = 0 V –1

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature
Coefficient

J

Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –8 V, VDS = 0 V –100 nA

V

= 0 V, ID = –250 µA

GS

= –250 µA, Referenced to 25°C

I

D

–12 V

–2.7

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current VGS = –4.5 V, VDS = –5 V –6 A

D(on)

V

= VGS, ID = –250 µA

DS

= –250 µA, Referenced to 25°C

I

D

VGS = –4.5 V, ID = –2.0 A
V

= –2.5 V, ID = –1.7 A

GS

= –1.8 V, ID = –1.4 A

V

GS

= –4.5 V, ID = –2.0 A, TJ = 125°C

V

GS

–0.4 –0.7 –1.5 V

2.3

84

107
145

98

110
150
215
148

mV/°C

mΩ

gFS Forward Transconductance VDS = –5 V, ID = –2.0 A 6.8 S

Dynamic Characteristics

C

Input Capacitance 477 pF

iss

C

Output Capacitance 186 pF

oss

C

Reverse Transfer Capacitance

rss

= –6.0 V, V

V

DS

f = 1.0 MHz

= 0 V,

GS

124 pF

Switching Characteristics (Note 2)

V

= –6.0 V, ID = 1 A,

t

Turn–On Delay Time 10 20 ns

d(on)

tr Turn–On Rise Time 11 20 ns

t

Turn–Off Delay Time 12 22 ns

d(off)

tf Turn–Off Fall Time

Qg Total Gate Charge 5 7 nC

Qgs Gate–Source Charge 0.8 nC

Qgd Gate–Drain Charge

DD

= –4.5 V, R

V

GS

V

= –6.0 V, ID = –2.0 A,

DS

= –4.5 V

V

GS

GEN

= 6 Ω

18 32 ns

1.4 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –0.62 A

VSD Drain–Source Diode Forward

Voltage

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

a.) 170°C/W when mounted on a 1 in

b.) 260°C/W when mounted on a minimum pad.

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

is guaranteed by design while R

θJC

2

pad of 2 oz. copper.

VGS = 0 V, IS = –0.62 A (Note 2) –0.7 –1.2 V

is determined by the user's board design.

θCA

FDG330P Rev D (W )

)

Typical Characteristics

FDG330P

6

VGS=-4.5V

-3.0V

4.5

3

, DRAIN CURRENT (A

D

1.5

-I

0

00.511.522.5

-V

-2.5V

DS

-2.0V

, DRAIN TO SOURCE VOLTAGE (V)

-1.8V

-1.5V

3

VGS=-1.5V

2.6

2.2

1.8

, NORMALIZED

1.4

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.6

01.534.56

-1.8V

-2.0V

-I

, DRAIN CURRENT (A)

D

-2.5V

-3.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.4

ID = -2.0A

1.3
V

= -4.5V

GS

1.2

1.1

1

, NORMALIZED

DS(ON)

0.9

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.7

-50 -25 0 25 50 75 100 12 5 150

, JUNCTION TEMPERATURE (oC)

T

J

0.3

0.25

0.2

0.15

, ON-RESISTANCE (OHM)

0.1

DS(ON)

R

TA = 25oC

0.05
12345

TA = 125oC

, GATE TO SOURCE VOLTAGE (V)

-V

GS

-4.5V

ID = -1A

Figure 3. On-Resistance Variation with

Temperature.

6

VDS = -5V

4.5

3

, DRAIN CURRENT (A)

D

1.5

-I

0

0.5 1 1.5 2

-V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = -55oC

125oC

25oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

10

VGS = 0V

1

TA = 125oC

25oC

-55oC

0 0.2 0.4 0.6 0.8 1 1.2

-V

BODY DIODE FORWARD VOLTAGE (V)

SD,

, REVERSE DRAIN CURRENT (A)

S

-I

0.1

0.01

0.001

0.0001

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDG330P Rev D (W )

)

T

)

Typical Characteristics

FDG330P

6

ID = -2A VDS = -4V

5

4

3

2

, GATE-SOURCE VOLTAGE (V)

1

GS

-V

0

02468

, GATE CHARGE (nC)

Q

g

-6V

-8V

800

700

600

500

400

300

CAPACITANCE (pF)

200

100

0

024681012

-V

C

ISS

C

OSS

C

RSS

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

10

R

LIMIT

DS(ON)

1

VGS = -4.5V

, DRAIN CURRENT (A

D

0.1

SINGLE PULSE

-I

0.01

= 260oC/W

R

θ

JA

T

= 25oC

A

0.1 1 10 100

-V

DS

100ms

1s

DC

, DRAIN-SOURCE VO LTAGE (V)

10ms

100µs

1ms

10

SINGLE PULSE
R

θ

8

6

4

2

P(pk), PEAK TRANSIENT POWER (W)

0

0.01 0.1 1 10 100

t

, TIME (sec)

1

JA

T

f = 1 MHz
V

= 0 V

GS

= 260°C/W

= 25°C

A

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

r(t), NORMALIZED EFFECTIVE TRANSIEN

THERMAL RESISTANCE

0.001

0.1

0.01

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

R

(t) = r(t) * R

θJA

R

= 260oC/W

θJA

P(pk

t

1

t

2

T

- TA = P * R

J

Duty Cycle, D = t

θJA

(t)

JA

θ

/ t

1

2

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

FDG330P Rev D (W )

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna

TM

TM

FACT™
FACT Quiet Series™

STAR*POWER is used under license

FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™



OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench



QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER

SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™



UltraFET

VCX™



DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4