Datasheet FDG328P Datasheet (Fairchild Semiconductor)

FDG328P

P-Channel 2.5V Specified PowerTrench



MOSFET

FDG328P

October 2000

General Description

This P-Channel 2.5V specified MOSFET is produced in
a rugged gate version of Fairchild Semiconductor’s
advanced PowerTrench process. It has been optimized
for power management applications for a wide range of
gate drive voltages (2.5V – 12V).

Applications

• Load switch

• Power management

• DC/DC converter

Features

• –1.5 A, –20 V. R

• Low gate charge

• High performance trench technology for extremely

low R

DS(ON)

• Compact industry standard SC70-6 surface mount
package

= 0.145 Ω @ VGS = –4.5 V

DS(ON)

R

= 0.210 Ω @ VGS = –2.5 V

DS(ON)

S

D

1

6

D

2

5

G

Pin 1

SC70-6

D

D

Absolute Maximum Ratings T

=25oC unless otherwise noted

A

3

4

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

D

TJ, T

STG

Drain-Source Voltage –20 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) –1.5 A

– Pulsed –6

Power Dissipation for Single Operation (Note 1a) 0.75 WP

(Note 1b)

Operating and Storage Junction Temperature Range -55 to +150

± 12

0.48

V

°C

Thermal Characteristics

R

θJA

Thermal Resistance, Junction-to-Ambient (Note 1b) 260

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

.28 FDG328P 7’’ 8mm 3000 units

2000 Fairchild Semiconductor International

°C/W

FDG328P Rev C(W)

FDG328P

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

DSS

∆BVDSS
∆T
I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

V

= 0 V, ID = –250 µA

GS

I

= –250 µA, Referenced to 25°C

D

–20 V

–9

Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA

mV/°C

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
∆T
R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain–Source
On–Resistance

V

= VGS, ID = –250 µA

DS

I

= –250 µA, Referenced to 25°C

D

VGS = –4.5 V, ID = –1.5 A

= –2.5 V, ID = –1.2 A

V

GS

= –4.5 V, ID = –1.5 A, TJ=125°C

V

GS

–0.6 –1.5 V

3

120
169
156

On–State Drain Current VGS = –4.5 V, VDS = –5 V –3 A
Forward Transconductance VDS = –5 V, ID = –1.5 A 5 S

145
210
203

mV/°C

mΩ

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 337 pF
Output Capacitance 88 pF
Reverse Transfer Capacitance

= –10 V, V

V

DS

f = 1.0 MHz

GS

= 0 V,

51 pF

Switching Characteristics (Note 2)

V

= –10 V, ID = 1 A,

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

Turn–On Delay Time 9 18 ns
Turn–On Rise Time 12 22 ns
Turn–Off Delay Time 10 20 ns
Turn–Off Fall Time

g

gs

gd

Total Gate Charge 3.7 6 nC
Gate–Source Charge 0.7 nC
Gate–Drain Charge

DD

= –4.5 V, R

V

GS

V

= –10 V, ID = –1.5 A,

DS

= –4.5 V

V

GS

GEN

= 6 Ω

510ns

1.3 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

θJA

the drain pins. R

Maximum Continuous Drain–Source Diode Forward Current –0.62 A
Drain–Source Diode Forward

VGS = 0 V, IS = –0.62 A (Note 2) –0.7 –1.2 V

Voltage

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

a.) 170°/W when mounted on a 1 in2 pad of 2 oz. copper.
b.) 260°/W when mounted on a minimum pad.

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

µA

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDG328P Rev C(W)

Typical Characteristics

)

E

E

)

)

6

VGS = -4.5V

5

4

3

2

, DRAIN CURRENT (A

D

-I

1

0

00.511.522.5

-3.5V

-3.0V

-V

-2.5V

, DRAIN-SOURCE VOLTAGE (V)

DS

-2.0V

-1.8V

Characteristics Current

2.5

2.25
VGS = -2.0V

2

1.75

1.5

, NORMALIZED

DS(ON)

1.25

R

1

DRAIN-SOURCE ON-RESISTANC

0.75

0123456

-2.5V

-3.0V

, DRAIN CURRENT ( A)

-I

D

-3.5V

FDG328PFDG328P

-4.5V

1.5
ID = -1.5A

1.4

= -4.5V

V

GS

1.3

1.2

1.1

, NORMALIZED

1

DS(ON)

R

0.9

0.8

DRAIN-SOURCE ON-RESISTANC

0.7

-50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (oC)

J

Figure 3. On-Resistance Variation

withTemperature.

6

VDS = -5V

5

4

3

2

, DRAIN CURRENT (A

D

-I

1

0

0.511.522.53

-V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = -55oC

25oC

125oC

0.4

0.35

0.3

0.25

0.2

, ON-RESISTANCE (OHM)

0.15

DS(ON)

R

0.05

TA = 25oC

0.1

1.522.533.544.55

TA = 125oC

, GATE TO SOURCE VOLTAGE (V)

-V

GS

ID = -0.8 A

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

10

VGS = 0V

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A

S

-I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

25oC

-55oC

-V

, BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

Typical Characteristics

FDG328P Rev C(W)

5

)

)

4

3

ID = -1.5A

VDS = -

-10V

-15V

600

500

400

C

ISS

300

2

1

, GATE-SOURCE VOLTAGE (V)

GS

-V

0

012345

Q

, GATE CHARGE (nC)

g

200

CAPACITANCE (pF

100

0

0 5 10 15 20

C

OSS

C

RSS

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

f = 1MHz

V

= 0 V

GS

100

R

DS(ON)

LIMIT

10

100µs

30

24

SINGLE PULSE

R

θ

JA

1ms

1

VGS = -4.5V

, DRAIN CURRENT (A

SINGLE PULSE

D

0.1

-I

R

= 260oC/W

θ

JA

T

= 25oC

A

0.01

0.1 1 10 100

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

10ms

100ms

1s

DC

18

12

POWER (W)

6

0

0.0001 0.001 0.01 0.1 1 10 100

SINGLE PULSE TIME (SEC)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.2

0.1

0.01

0.1

0.05

0.02

0.01

SINGLE PULSE

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.001

0.0001 0.001 0.01 0.1 1 10 100 1000

, TIM E (sec)

t

1

R

(t) = r(t) + R

JA

θ

R

= 260 °C/W

JA

θ

P(pk)

t

1

T

- TA = P * R

J

t

2

Duty Cycle, D = t

θJA

= 260oC/W

T

= 25oC

A

JA

θ

(t)
/ t

1

2

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.

FDG328P Rev C(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOS
EnSigna

TM

TM

FACT™
FACT Quiet Series™



FAST

FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
P ACMAN™
POP™

PowerTrench



QFET™
QS™
QT Optoelectronics™

Quiet Series™
SILENT SWITCHER
SMART ST ART™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8



SyncFET™
TinyLogic™
UHC™
VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. G