Datasheet FDC5614P Datasheet (Fairchild Semiconductor)

FDC5614P

60V P-Channel Logic Level PowerTrench



MOSFET

FDC5614P

February 2002

General Description

This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.

Applications

• DC-DC converters

• Load switch

• Power management

Features

• –3 A, –60 V. R

R

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

= 0.105 Ω @ VGS = –10 V

DS(ON)

= 0.135 Ω @ VGS = –4.5 V

DS(ON)

S

D

D

1

2

6

5

G

SuperSOT -6

TM

D

D

Absolute Maximum Ratings T

o

=25

C unless otherwise noted

A

3

4

Symbol Parameter Ratings Units

V

Drain-Source Voltage –60 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a) –3 A

– Pulsed –20

Maximum Power Dissipation (Note 1a) 1.6 W PD

TJ, T

Operating and Storage Junction Temperature Range –55 to +150

STG

(Note 1b)

±20

0.8

V

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a) 78

(Note 1) 30

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

.564 FDC5614P 7’’ 8mm 3000 units

2002 Fairchild Sem iconductor Corporation

°C/W

°C/W

FDC5614P Rev C1 (W )

FDC5614P

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS
∆T

I

Zero Gate Voltage Drain Current VDS = –48 V, VGS = 0 V –1

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature
Coefficient

J

Gate–Body Leakage, Forward VGS = 20V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA

V

= 0 V, ID = –250 µA

GS

I

= –250 µA, Referenced to

D

25°C

–60 V

–49

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current VGS = –10 V, VDS = –5 V –20 A

D(on)

V

= VGS, ID = –250 µA

DS

= –250 µA,Referenced to 25°C

I

D

VGS = –10 V, ID = –3 A
V

= –4.5 V, ID = –2.7 A

GS

= –10 V, ID = –3 A TJ=125°C

V

GS

–1 –1.6 –3 V

4

82

105
130

105
135
190

mV/°C

mΩ

gFS Forward Transconductance VDS = –5 V, ID = –3 A 8 S

Dynamic Characteristics

C

Input Capacitance 759 pF

iss

C

Output Capacitance 90 pF

oss

C

Reverse Transfer Capacitance

rss

= –30 V, V

V

DS

f = 1.0 MHz

= 0 V,

GS

39 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 7 14 ns

d(on)

tr Turn–On Rise Time 10 20 ns

t

Turn–Off Delay Time 19 34 ns

d(off)

tf Turn–Off Fall Time

Qg Total Gate Charge 15 24 nC

Qgs Gate–Source Charge 2.5 nC

Qgd Gate–Drain Charge

= –30 V, ID = –1 A,

V

DD

= –10 V, R

V

GS

= –30V, ID = –3.0 A,

V

DS

V

= –10 V

GS

GEN

= 6 Ω

12 22 ns

3.0 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –1.3 A

VSD Drain–Source Diode Forward

Voltage

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain

θJA

pins. R

a. 78°C/W when mounted on a 1in

b. 156°C/W when mounted on a minimum pad.

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycl e ≤ 2.0%

is guaranteed by design while R

θJC

2

pad of 2oz copper on FR-4 board.

is determined by the user's board design.

θCA

VGS = 0 V, IS = –1.3 A (Note 2) –0.8 –1.2 V

FDC5614P Rev C1 (W )

Typical Characteristics

FDC5614P

15

V

= -10V

-6.0V

12

-5.0V

9

6

3

0

012345

-4.5V

-4.0V

-3.5V

, DRAIN-SOU RCE VOLTAGE (V)

-V

DS

-3.0V

-2.5V

1.8

1.6

1.4

, NORMALIZED

1.2

DS(ON)

R

DRAIN-SOURCE ON-RESISTANCE

0.8

VGS = -3.5V

-4.0V

-4.5V

-5.0V

-6.0V

-7.0V

1

0246810

-I

, DRAIN CURRENT (A)

D

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.8

ID = -3.0A

1.6
V

= -10V

GS

1.4

1.2

1

0.8

0.6

0.4

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

0.4

0.3

0.2

0.1

TA = 25oC

0

246810

TA = 125oC

, GATE TO SOURCE VOLTAGE (V)

-V

GS

-8.0V

ID = -1.5A

-10V

Figure 3. On-Resistance Variation with

Temperature.

15

VDS = -5V

12

9

6

3

0

12345

, GATE TO SOURCE VOLTAGE (V)

-V

GS

TA = -55oC

25oC

125oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

0 0.2 0.4 0.6 0.8 1 1 .2 1 .4

TA = 125oC

25oC

BODY DIODE FORWARD V OLTAGE (V)

-V

SD,

-55oC

with Source Current and Temperature.

FDC5614P Rev C1 (W )

Typical Characteristics

FDC5614P

10

ID = -3.0A

8

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

-V

0

0 4 8 12 16

Q

, GATE CHAR GE (nC)

g

VDS = -10V

-20V

-30V

1200

1000

800

600

400

200

C

0

0 102030405060

C

RSS

OSS

-V

, DRAIN TO SOURCE VO LTAGE (V)

DS

C

ISS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

10

1

, DRAIN CURRENT (A)

0.1

D

-I

0.01

LIMIT

DS(ON)

VGS = -10V

SINGLE PULSE

= 156oC/W

R

θ

JA

= 25oC

T

A

0.1 1 10 100

-V

, DRAIN-SOURCE VO LTAGE (V)

DS

10ms

1s

10s

DC

100µs

40

SINGLE PULSE

= 156°C/W

R

θ

30

20

10

0

0.1 1 10 100 1000

, TIME (sec)

t

1

JA

T

= 25°C

A

f = 1 MHz
V

= 0 V

GS

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.2

0.1

0.01

0.1

0.05

0.02

0.01

SINGLE PULSE

0.001

0.0001 0.001 0.01 0.1 1 10 100 1000

t

, TIME (sec)

1

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.

RθJA(t) = r(t) + Rθ

RθJA = 156°C/W

t

1

t

2

- TA = P * RθJA(t)

T

J

Duty Cycle, D = t

FDC5614P Rev C1 (W )

JA

/ t

1

2

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna

TM

TM

FACT™
FACT Quiet Series™

STAR*POWER is used under license

FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™



OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench



QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER

SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™



UltraFET

VCX™



DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4