Datasheet FDB2614 Datasheet (Fairchild)

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FDB2614

200V N-Channel PowerTrench MOSFET

FDB2614 200V N-Channel PowerTrench MOSFET

November 2006

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Description

• 62A, 200V, R

• Fast switching speed

• Low gate charge

• High performance trench technology for extremely low R

• High power and current handling capability

= 22.9mΩ @VGS = 10 V

DS(on)

Application

• PDP application

D

G

S

D

S

Absolute Maximum Ratings

Symbol Parameter Ratings Unit

V

DS

V

GS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt

P

D

T

J, TSTG

T

L

*Drain current limited by maximum junction temperature

Drain-Source Voltage 200 V

Gate-Source Voltage ± 30 V

Drain Current - Continuous (TC = 25°C)

Drain Current - Pulsed

Single Pulsed Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds

- Continuous (TC = 100°C)

(Note 1)

(Note 2)

(Note 3)

- Derate above 25°C

62

39.3

see Figure 9

145 mJ

4.5 V/ns

260

2.1

300 °C

DS(on)

A A

A

W

W/°C

Thermal Characteristics

Symbol Parameter Min. Max. Unit

R

θJC

R

* Thermal Resistance, Junction-to-Ambient* -- 40 °C/W

θJA

R

θJA

*When mounted on the minimum pad size recommended (PCB Mount)

FDB2614 Rev. A

Thermal Resistance, Junction-to-Case -- 0.48 °C/W

Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Widt h Quantity

FDB2614 FDB2614 D2-PAK 330mm 24mm 800

FDB2614 200V N-Channel PowerTrench MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV / ∆T

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 1mH, IAS = 17A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 62A, di/dt ≤ 100A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 200 -- -- V

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V

ID = 250µA, Referenced to 25°C -- 0.2 -- V/°C

VDS = 200V, VGS = 0V, TJ = 125°C

--

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 4.0 5.0 V

Static Drain-Source On-Resistance VGS = 10V, ID = 31A -- 22.9 27 mΩ

Forward Transconductance VDS = 10V, ID = 31A

Input Capacitance

Output Capacitance -- 505 675 pF

VDS = 25V, VGS = 0V f = 1.0MHz

(Note 4)

-- 72 -- S

-- 5435 7230 pF

Reverse Transfer Capacitance -- 11 0 165 pF

Turn-O n Delay Time

Turn-O n Ris e Ti me -- 284 560 ns

Turn-O ff Delay Time -- 103 220 ns

Turn-O ff Fall Time -- 162 335 ns

VDD = 100V, ID = 62A VGS = 10V, R

GEN

= 25Ω

(Note 4, 5)

Total Gate Charge

Gate-Source Charge -- 35 -- nC

Gate-Drain Charge -- 18 -- nC

VDS = 100V, ID = 62A VGS = 10V

(Note 4, 5)

-- 77 165 ns

-- 76 99 nC

Maximum Continuous Drain-Source Diode Forward Current -- -- 62 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 186 A

Drain-Source Diode Forward Voltage VGS = 0V, IS = 62A -- -- 1.2 V

Reverse Recovery Time VGS = 0V, IS = 62A

Reverse Recovery Charge -- 0.81 -- µC

, Starting TJ = 25°C

DSS

dIF/dt =100A/µs (Note 4)

-- 145 -- ns

1

500µAµA

FDB2614 Rev. A

2 www.fairchildsemi.com

FDB2614 200V N-Channel PowerTrench MOSFET

Figure 1.

On-Region Characteristics Figure 2.

500

V Top : 15.0 V

10.0 V

8.0 V

100

7.0 V

6.5 V

6.0 V Bottom : 5.5 V

10

,Drain Current[A]

D

I

1

0.1 1 10

Figure 3.

GS

* Notes :

1. 250

2. T

VDS,Drain-Source Voltage[V]

O n - R e s i s t a n c e V a r i a t i o n v s . D r a i n

Current and Gate Voltage

0.06

0.05

0.04

[Ω],

DS(ON)

R

0.03

VGS = 10V

µs Pulse Test

= 25oC

C

* Note : TJ = 25oC

Transfer Characteristics

1000

* Notes :

1. V

= 10V

DS

µs Pulse Test

2. 250

100

10

,Drain Current[A]

D

I

1

2468

Figure 4.

VGS,Gate-Source Voltage[V]

Body Diode Forward Voltage Varia-

150oC

-55oC

25oC

tion vs. Source Current and Temperature

TA = 150oC

TA = 25oC

1000

* Notes :

= 0V

1. V

GS

= 250µA

2. I

D

100

10

Drain-Source On-Resistance

0.02

0.015

Figure 5.

9000

6000

3000

Capacitances [pF]

0

0.1 1 10

VGS = 20V

, Reverse Drain Current [A]

I

DR

0 50 100 150 200

ID, Drain Current [A]

Capacitance Characteristics Figure 6.

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

iss

C

oss

C

rss

= C

gd

VDS, Drain-Source Voltage [V]

* Note:

1. V

= 0V

GS

2. f = 1MHz

30

10

, Gate-Source Voltage [V]

GS

V

1

0.2 0.4 0.6 0.8 1.0 1.2

VSD, Source-Drain voltage [V]

Gate Charge Characteristics

VDS = 40V

= 100V

V

8

6

4

2

0

0 20406080100

DS

V

= 160V

DS

* Note : ID = 62A

Qg, Total Gate Ch arge [nC]

FDB2614 Rev. A

3 www.fairchildsemi.com

FDB2614 200V N-Channel PowerTrench MOSFET

Figure 7. Breakdown Voltage Variation vs.

Tempera t ure

1.2

1.1

1.0

, [Normalized]

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150

Figure 9.

1000

100

10

1

, Drain Current [A]

D

I

0.1

0.01

TJ, Junction Temperature [oC]

Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case-

Operation in This Area is Limited by R

110100

VDS, Drain-Source Voltage [V]

DS(on)

* Notes :

= 25oC

1. T

C

2. T

= 150oC

J

3. Single Pulse

1ms

10 ms

DC

* Notes :

1. V

2. I

100 µs

= 0V

GS

= 250µA

D

400

Figure 8. On-Resistance Variation vs. Tem-

perature

3.0

2.5

2.0

1.5

, [Normalized]

1.0

DS(on)

r

Drain-Source On-Resistance

0.5

0.0

-100 -50 0 50 100 150 200 TJ, Junction Temperature [oC]

* Notes :

1. V

= 10V

GS

= 31A

2. I

D

Tempera t ure

70

60

50

40

30

, Drain Current [A]

20

D

I

10

0

25 50 75 100 125 150

TC, Case Temperature [oC]

FDB2614 Rev. A

Figure 11.

0

10

]

0.5

θJC

-1

10

0.2

0.1

0.05

0.02

-2

10

0.01

Thermal Response [Z

Single pulse

-3

10

-5

10

Transient Thermal Response Curve

P

DM

* Notes :

1. Z

2. Duty Factor, D=t

3. TJM - TC = PDM * Z

-4

-3

10

-2

10

-1

10

t

1

t

2

(t) = 0.48oC/W Max.

θJC

0

10

1/t2

θJC

(t)

1

10

Rectangular Pulse Duration [sec]

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Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FDB2614 200V N-Channel PowerTrench MOSFET

FDB2614 Rev. A

Unclamped Inductive Switching Test Circuit & Waveforms

5 www.fairchildsemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms

FDB2614 200V N-Channel PowerTrench MOSFET

FDB2614 Rev. A

6 www.fairchildsemi.com

FDB2614 200V N-Channel PowerTrench MOSFET

FDB2614 Rev. A

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TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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FDB2614 200V N-Channel PowerTrench MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling,

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect

its safety or effectiveness. can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

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FDB2614 Rev. A

Rev. I20