Datasheet FDA59N25 Datasheet (Fairchild)

September 2005

UniFET

FDA59N25 250V N-Channel MOSFET

TM

FDA59N25

250V N-Channel MOSFET

Features

• 59A, 250V, R

• Low gate charge (typical 63 nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

(typical 70 pF)

rss

Absolute Maximum Ratings

= 0.049Ω @VGS = 10 V

DS(on)

GSD

TO-3PN

FDA Series

VDS = 250V V

DS(Avalanche)

R

DS(on)

= 300V

T yp. @10V = 41mΩ

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

D

{

z





z

G

{

z z

z

{

S

Symbol Parameter FDA59N25 Unit

V

DSS

V

DS(Avalanche)

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

T

J, TSTG

T

L

Drain-Source Voltage 250 V Repetitive Avalanche Voltage Drain Current - Continuous (TC = 25°C)

- Continuous (T Drain Current - Pulsed Gate-Source voltage ±30 V Single Pulsed Avalanche Energy Avalanche Current (Note 1) 59 A Repetitive Avalanche Energy (Note 1) 39.2 mJ

Power Dissipation (TC = 25°C)

- Derate above 25°C Operating and Storage Temperature Range -55 to +150 °C Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 100°C)

C

(Note 1, 2)

(Note 1)

(Note 2)

(Note 3) 4.5 V/ns

300 V

59 35

236 A

1458 mJ

392

3.2

300 °C

Thermal Characteristics

Symbol Parameter Min. Max. Unit

R

θJC

R

θCS

R

θJA

Thermal Resistance, Junction-to-Case -- 0.32 °C/W Thermal Resistance, Case-to-Sink 0.24 -- °C/W Thermal Resistance, Junction-to-Ambient -- 40 °C/W

A A

W

W/°C

FDA59N25 Rev. A

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDA59N25 FDA59N25 TO-3PN -- -- 30

FDA59N25 250V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics

BV

DSS

∆BV / ∆T

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 0.67mH, IAS = 59A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 59A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 250 -- -- V Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V

= 250µA, Referenced to 25°C--0.25--V/°C

I

D

= 200V, TC = 125°C

V

DS

--

1

10

µA µA

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250µA3.0--5.0V Static Drain-Source

On-Resistance Forward Transconductance VDS = 40V, ID = 29.5A

Input Capacitance VDS = 25V, VGS = 0V, Output Capacitance -- 630 820 pF

= 10V, ID = 29.5A -- 0.041 0.049 Ω

V

GS

(Note 4)

-- 45 -- S

-- 3090 4020 pF

f = 1.0MHz

Reverse Transfer Capacitance -- 70 110 pF

Turn-On Delay Time VDD = 125V, ID = 59A

= 25Ω

R

Turn-On Rise Time -- 480 970 ns

G

-- 70 150 ns

Turn-Off Delay Time -- 90 190 ns Turn-Off Fall Time -- 170 350 ns Total Gate Charge VDS = 200V, ID = 59A

= 10V

V

Gate-Source Charge -- 18.5 -- nC

GS

Gate-Drain Charge -- 30 -- nC

(Note 4, 5)

-- 63 82 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 59 A Maximum Pulsed Drain-Source Diode Forward Current -- -- 236 A Drain-Source Diode Forward Voltage VGS = 0V, IS = 59A -- -- 1. 4 V Reverse Recovery Time VGS = 0V, IS = 59A

/dt =100A/µs (Note 4)

dI

Reverse Recovery Charge -- 4.4 -- µC

, Starting TJ = 25°C

DSS

F

-- 190 -- ns

FDA59N25 Rev. A

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FDA59N25 250V N-Channel MOSFET

V Top : 15.0 V

2

10.0 V

10

8.0 V

7.0 V

6.5 V Bottom : 6.0 V

GS

2

10

150°C

1

10

, Drain Current [A]

D

I

0

10

-1

10

0

10

* Notes :

1. 250

2. T

1

10

µs Pulse Test

= 25°C

C

VDS, Drain-Source Voltage [V]

1

10

, Drain Current [A]

D

I

0

10

2 4 6 8 10 12

25°C

-55°C

* Notes :

1. V

2. 250

DS

VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

0.15

0.12

0.09

[Ω],

DS(ON)

0.06

R

0.03

Drain-Source On-Resistance

0.00 0 25 50 75 100 125 150 175

VGS = 10V

ID, Drain Current [A]

VGS = 20V

* Note : TJ = 25°C

2

10

1

10

, Reverse Drain Current [A]

DR

I

0

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

150°C

VSD, Source-Drain voltage [V]

25°C

* Notes :

1. V

GS

2. 250

= 40V

µs Pulse T est

= 0V

µs Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

8000

6000

4000

Capacitances [pF]

2000

0

-1

10

FDA59N25 Rev. A

C

oss

C

iss

C

rss

0

10

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

* Note ;

1. V

2. f = 1 MHz

1

10

= 0 V

GS

3 www.fairchildsemi.com

12

10

8

VDS = 50V VDS = 125V VDS = 200V

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 10203040506070

QG, Tota l Gate Cha rg e [nC ]

* Note : ID = 59A

Typical Performance Characterist ics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature

FDA59N25 250V N-Channel MOSFET

1.2

3.0

2.5

1.1

2.0

1.0

, (Normalized)

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

* Notes :

1. V

2. I

TJ, Junction Temperature [°C]

= 0 V

GS

= 250µA

D

1.5

, (Normalized)

1.0

DS(ON)

R

0.5

Drain-Source On-Resista nce

0.0

-100 -50 0 50 100 150 200

TJ, Junction Temperature [°C]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

3

10

2

10

1

10

Operation in This Area is Limited by R

0

10

, Drain Current [A]

D

I

-1

10

-2

10

0

10

10 ms

100 ms

DC

DS(on)

* Notes :

= 25°C

1. T

C

= 150°C

2. T

J

3. Sing le P u ls e

1

10

VDS, Drain-Source Voltage [V]

1 ms

70

10 µs

100 µs

2

10

60

50

40

30

, Drain Current [A]

20

D

I

10

0

25 50 75 100 125 15 0

TC, Case Temperature [°C]

* Notes :

1. V

2. I

= 10 V

GS

= 29.5 A

D

FDA59N25 Rev. A

Figure 11. Transient Thermal Response Curve

D=0.5

-1

10

0.2

(t), Thermal Response

10

θJC

Z

0.1

0.05

0.02

-2

0.01 single pulse

-5

10

-4

10

-3

10

t1, Sq uar e W ave Pu lse D u r a tio n [s ec]

4 www.fairchildsemi.com

-2

10

* Notes :

1. Z

(t) = 0.32 °C/W Max.

θJC

2. Duty Fa c to r , D =t

3. TJM - TC = PDM * Z

P

DM

t

1

t

2

-1

10

1/t2

(t)

θJC

0

10

1

10

12V

200nF

3mA

50K

Gate Charge Test Circuit & Waveform

Same Type

Ω

300nF

V

GS

Same Type

as DUT

DUT

V

DS

Resistive Switching Test Circuit & Waveforms

V

GS

10V

FDA59N25 250V N-Channel MOSFET

Q

g

Q

gs

Q

gd

Charge

10V

R

L

DUT

L

V

DD

V

DS

V

GS

R

G

V

DS

90%

10%

V

GS

t

d(on)tr

t

on

t

d(off)

t

f

t

off

Unclamped Inductive Switching Test Circuit & Waveforms

BV

DSS

L

LL

V

DS

BV

DSS

V

DSS

I

AS

DD

I

IDI

D

R

G

DUT

t

p

V

DD

1

----

E

=LI

E

=LI

AS

2

AS

I

(t)

D

t

p

DSS

--------------------

-------------------BV

BV

DSS-VDD

Time

V

(t)

V

(t)

DS

FDA59N25 Rev. A

5 www.fairchildsemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms

+

DUT

I

SD

Driver

R

G

V

GS

+

V

DS

_

L

LL

Same Type

as DUT

• dv/dt controlled by R

•ISDcontroll ed by pulse period

G

FDA59N25 250V N-Channel MOSFET

V

DD

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

SD

Body Diode

Forward Voltage Drop

di/dt

10V

V

DD

FDA59N25 Rev. A

6 www.fairchildsemi.com

Mechanical Dimensions

FDA59N25 250V N-Channel MOSFET

TO-3PN

FDA59N25 Rev. A

Dimensions in Millimeters

7 www.fairchildsemi.com

TRADEMARKS

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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RE LIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HE REIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

FDA59N25 250V N-Channel MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use pr ovided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

8 www.fairchildsemi.com

FDA59N25 Rev. A

Rev. I16