Datasheet FCX1051A Datasheet (Zetex Semiconductor)

Page 1
SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR
ISSSUE 1 - DECEMBER 1998
FEATURES
* 2W POWER DISSIPATION
* 10A Peak Pulse Current * Excellent H * Extremely Low Saturation Voltage E.g. 17mv Typ. * Extremely Low Equivalent On-resistance;
R
CE(sat)
Complimentary Type - FCX1151A Partmarking Detail - 051
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current ** I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T
† recommended P ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2% Spice parameter data is available upon request for these devices. Refer to the handling instructions for soldering surface mount components.
FE
57mΩ at 3A
CBO
CEO
EBO
CM
C
=25°C P
amb
calculated using FR4 measuring 15x15x0.6mm
tot
tot
j:Tstg
FCX1051A
C
C
B
150 V
40 V
5V
10 A
3A
1 † 2 ‡
-55 to +150 °C
W W
E
Page 2
FCX1051A
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL Min Typ Max UNIT CONDITIONS.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer Ratio
Transition Frequency f
Output Capacitance C
Switching Times
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
obo
t
on
t
off
150 V
150 V
=100µA
I
C
=100µA
I
C
40 V IC=10mA
150 V
5V
=100µA, V
I
C
I
=100µA
E
0.3 10 nA VCB=120V
0.3 10 nA VEB=4V
0.3 10 nA V
17 85 140 170 250
25 120 180 250 340
mV mV mV mV mV
=120V
CES
IC=0.2A, IB=10mA* I
=1A, IB=10mA*
C
I
=2A, IB=20mA*
C
I
=3A, IB=40mA*
C
I
=5A, IB=100mA*
C
880 1000 mV IC=3A, IB=40mA*
840 950 mV IC=3A, VCE=2V*
290 270 270 130 40
440 450 360 220 55
1200
IC=10mA, VCE=2V* I
=1A, VCE=2V*
C
I
=3A, VCE=2V*
C
I
=5A, VCE=2V*
C
I
=10A, VCE=2V*
C
155 MHz IC=50mA, VCE=10V
f=100MHz
27 40 pF VCB=10V, f=1MHz
220 ns IC=3A, IB=30mA, VCC=10V
540 ns
I
=3A, I
C
=30mA, V
B
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
=1V
EB
=10V
CC
Page 3
FCX1051A
TYPICAL CHARACTERISTICS
750
600
450
300
150
0.5
+25°C
0.4
IC/IB=50
0.3
0.2
0.1
0
1m
VCE=2V
+100°C
+25°C
-55°C
0
1m
1.0
IC/IB=100
IC/IB=200
10m 100m 1 10
IC- Collector Current (A)
V
10m 100m 1 10
IC - Collector Current (A)
CE(sat)
hFEv I
v I
C
C
0.5
IC/IB=100
0.4
0.3
0.2
0.1
0
1m
IC/IB=100
1.6
1.2
0.8
0.4
0
1m
10
-55°C
+25°C +100°C +150°C
10m 100m 1 10
IC- Collector Current (A)
V
-55°C
+25°C +100°C +150°C
10m 100m 1 10
IC - Collector Current (A)
V
CE(sat)
BE(sat)
v I
v I
C
C
0.8
0.6
0.4
0.2
0
10m 100m 1 10
1m
IC- Collector Current (A)
V
BE(on)
v I
C
-55°C
+25°C +100°C +150°C
1
0.1
0.01 100m 10 100
100ms
10ms
100us
DC
1s
1ms
1
VCE - Collector Emitter Voltage (V)
Safe Operating Area
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