Page 1
tm
August 2009
SupreMOS
FCP11N60N / FCPF11N60NT
N-Channel MOSFET
600V, 10.8A, 0.299Ω
FCP11N60N / FCPF11N60NT N-Channel MOSFET
TM
Features
•R
• Ultra Low Gate Charge ( Typ. Qg = 27.4nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
, T
T
J
T
L
*Drain current limited by maximum junction temperature
= 0.255Ω ( Typ.)@ VGS = 10V, ID = 5.4A
DS(on)
TO-220
G D S
Symbol Parameter FCP11N60N FCPF11N60NT Units
Drain to Source Voltage 600 V
Gate to Source Voltage ±30 V
Drain Current
Drain Current - Pulsed (Note 1) 32.4 32.4* A
Single Pulsed Avalanche Energy (Note 2) 201.7 mJ
Avalanche Current 3.7 A
Repetitive Avalanche Energy 0.94 mJ
MOSFET dv/dt Ruggedness 100 V/ns
Peak Diode Recovery dv/dt (Note 3) 20 V/ns
Power Dissipation
STG
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
FCP Series
C
D
G
S
= 25oC unless otherwise noted*
-Continuous (T
-Continuous (T
(T
= 25oC) 94.0 32.1 W
C
- Derate above 25
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
D
G
TO-220F
FCPF Series
S
= 25oC) 10.8 10.8*
C
= 100oC) 6.8 6.8*
C
o
C0.750.26W/
300
Thermal Characteristics
Symbol Parameter FCP11N60N FCPF11N60NT Units
R
θJC
θCS
R
θJA
Thermal Resistance, Junction to Case 1.33 3.9
Thermal Resistance, Case to Heat Sink (Typical) 0.5 0.5
Thermal Resistance, Junction to Ambient 62.5 62.5
A
o
C
o
C
o
C
o
C/WR
©2009 Fairchild Semiconductor Corporation
FCP11N60N / FCPF11N60NT Rev. A
www.fairchildsemi.com1
Page 2
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FCP11N60N FCP11N60N TO-220 - - 50
FCPF11N60NT FCPF11N60NT TO-220F - - 50
FCP11N60N / FCPF11N60NT N-Channel MOSFET
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V, TC = 25oC 600 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
I
= 1mA, Referenced to 25oC - 0.73 - V/oC
D
V
= 480V, V
DS
= 480V, V
V
DS
= 0V - - 10
GS
= 0V, TC = 125oC - - 100
GS
= 0V - - ±100 nA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250μA2.0-4.0V
Static Drain to Source On Resistance VGS = 10V, ID = 5.4A - 0.255 0.299 Ω
Forward Transconductance VDS = 40V, ID = 5.4A - 13.5 - S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
eff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 130 - pF
C
oss
Q
g(tot)
Q
gs
Q
gd
Input Capacitance
Output Capacitance - 45 60 pF
Reverse Transfer Capacitance - 3 5 pF
= 100V, VGS = 0V
V
DS
f = 1MHz
Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 25 - pF
Total Gate Charge at 10V
= 380V, ID = 5.4A,
V
Gate to Source Gate Charge - 4.9 - nC
Gate to Drain “Miller” Charge - 8.8 - nC
DS
V
= 10V
GS
(Note 4 )
ESR Equivalent Series Resistance (G-S) Drain Open 2.0 Ω
- 1130 1505 pF
- 27.4 35.6 nC
μA
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 9.1 28.2 ns
Turn-Off Delay Time - 42.0 94.0 ns
Turn-Off Fall Time - 10.0 30.0 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
= 3.7A, RG = 25Ω, Starting TJ = 25°C
AS
3. ISD ≤ 10.8A, di/dt ≤ 200A/μs, VDD = 380V, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
FCP11N60N / FCPF11N60NT Rev. A
Maximum Continuous Drain to Source Diode Forward Current - - 10.8 A
Maximum Pulsed Drain to Source Diode Forward Current - - 32.4 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 3.1 - μC
= 380V, ID = 5.4A
V
DD
= 4.7Ω
R
G
(Note 4)
= 0V, I
GS
= 0V, I
V
GS
dI
/dt = 100A/μs
F
= 5.4A - - 1.2 V
SD
= 5.4A
SD
2
- 13.6 37.2 ns
- 268 - ns
www.fairchildsemi.com
Page 3
Typical Performance Characteristics
FCP11N60N / FCPF11N60NT N-Channel MOSFET
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
100
V
=
15.0 V
GS
10.0 V
8.0 V
7.0 V
6.5 V
10
6.0 V
5.5 V
5.0 V
1
, Drain Current[A]
D
I
0.1
0.1 1 10 20
VDS, Drain-Source Voltage[V]
*Notes:
1. 250
2. T
μ
s Pulse Test
= 25oC
C
60
10
1
, Drain Current[A]
D
I
0.1
150oC
2468
VGS, Gate-Source Voltage[V]
-55oC
25oC
*Notes:
1. V
2. 250
= 20V
DS
μ
s Pulse Test
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
0.7
0.6
,
0.5
]
Ω
[
0.4
DS(ON)
R
0.3
Drain-Source On-Resistance
0.2
0 8 16 24 32
ID, Drain Current [A]
VGS = 10V
VGS = 20V
*Notes: T
= 25oC
C
100
150oC
10
25oC
, Reverse Drain Current [A]
S
I
1
0.40.60.81.01.21.4
*Notes:
1. VGS = 0V
μ
s Pulse Test
2. 250
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
6000
4000
2000
Capacitances [pF]
C
0
0.1 1 10 100 600
FCP11N60N / FCPF11N60NT Rev. A
VDS, Drain-Source Voltage [V]
C
= Cgs + Cgd (Cds = shorted
iss
C
= Cds + C
oss
C
= C
rss
gd
C
oss
C
iss
rss
gd
*Notes:
1. V
2. f = 1MHz
GS
= 0V
)
10
8
VDS = 120V
V
= 300V
DS
V
= 480V
DS
6
4
, Gate-Source Voltage [V]
GS
V
2
*Notes: I
= 5.4A
0
0 5 10 15 20 25 30
D
Qg, Total Gate Charge [nC]
3
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Page 4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
1.2
1.1
3.0
2.5
2.0
FCP11N60N / FCPF11N60NT N-Channel MOSFET
1.0
, [Normalized]
DSS
BV
0.9
Drain-Source Breakdown Voltage
0.8
-100 -50 0 50 100 150 200
TJ, Junction Temperature
*Notes:
1. V
2. I
D
o
[
C
]
= 0V
GS
= 1mA
1.5
, [Normalized]
1.0
DS(on)
R
Drain-Source On-Resistance
0.5
0.0
-100 -50 0 50 100 150 200
*Notes:
1. V
2. I
TJ, Junction Temperature
= 10V
GS
= 5.4A
D
o
[
C
]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area
50
10
, Drain Current [A]
D
I
0.1
0.01
_ FCP11N60N
_ FCPF11N60NT
20μs
100μs
1ms
10ms
= 25oC
C
= 150oC
J
DC
1
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
2. T
3. Single Pulse
0.1 1 10 100 1000
VDS, Drain-Source Voltage [V]
100
10
1
, Drain Current [A]
D
I
Operation in This Area
is Limited by R
0.1
0.01
0.1 1 10 100 1000
VDS, Drain-Source Voltage [V]
DS(on)
*Notes:
= 25oC
1. T
C
2. T
= 150oC
J
3. Single Pulse
20μs
100μs
1ms
10ms
DC
Figure 11. Maximum Drain Current
vs. Case Temperature
12
9
6
, Drain Current [A]
D
I
3
0
25 50 75 100 125 150
TC, Case Temperature
FCP11N60N / FCPF11N60NT Rev. A
o
[
C
]
4
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Page 5
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve _ FCP11N60N
2
1
]
0.5
JC
θ
Z
[
0.2
P
0.1
0.1
0.05
0.02
0.01
Thermal Response
Single pulse
0.01
-5
10
-4
10
-3
10
Rectangular Pulse Duration [sec]
Figure 13. Transient Thermal Response Curve _ FCPF11N60NT
5
DM
*Notes:
1. Z
2. Duty Factor, D= t
3. TJM - TC = PDM * Z
-2
10
t
1
t
2
(t) = 1.33oC/W Max.
θ
JC
-1
10
1/t2
(t)
θ
JC
1
FCP11N60N / FCPF11N60NT N-Channel MOSFET
]
θJC
1
0.1
Thermal Response [Z
0.01
0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
-5
10
-4
10
-3
10
Rectangular Pulse Duration [sec]
P
DM
t
1
t
*Notes:
1. Z
2. Duty Factor, D= t
3. TJM - TC = PDM * Z
-2
10
-1
10
11010210
2
(t) = 3.3oC/W Max.
θJC
1/t2
θJC
(t)
3
FCP11N60N / FCPF11N60NT Rev. A
5
www.fairchildsemi.com
Page 6
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
FCP11N60N / FCPF11N60NT N-Channel MOSFET
FCP11N60N / FCPF11N60NT Rev. A
Unclamped Inductive Switching Test Circuit & Waveforms
6
www.fairchildsemi.com
Page 7
Peak Diode Recovery dv/dt Test Circuit & Waveforms
g
p
g
p
+
+
V
V
DS
DS
_
_
L
LL
Sam e Type
Sam e Type
as DU T
as DU T
• dv/dt controlled by R
• dv/dt controlled by R
•ISDcontrolled by pulse period
•ISDcontrolled by pulse period
G
G
V
V
GS
GS
R
R
G
G
DUT
DUT
I
I
SD
SD
Driver
Driver
V
V
DD
DD
FCP11N60N / FCPF11N60NT N-Channel MOSFET
V
V
GS
GS
( D riv e r )
( D riv e r )
I
I
SD
SD
( D U T )
( D U T )
V
V
DS
DS
( DUT )
( DUT )
G ate P ulse W idth
G ate P ulse W idth
G ate P ulse W idth
--------------------------
--------------------------
--------------------------
D =
D =
D =
Gate Pulse Period
Gate Pulse Period
Gate Pulse Period
IFM, B ody D iode Forw ard C urrent
IFM, B ody D iode Forw ard C urrent
I
I
RM
RM
Body D iode R everse C urrent
Body D iode R everse C urrent
Body D iode R ecovery dv/dt
Body D iode R ecovery dv/dt
V
V
SD
SD
Body Diode
Body Diode
Forw ard Volta
Forw ard Volta
e D ro
e D ro
di/dt
di/dt
10V
10V
V
V
DD
DD
FCP11N60N / FCPF11N60NT Rev. A
7
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Page 8
Mechanical Dimensions
FCP11N60N / FCPF11N60NT N-Channel MOSFET
TO-220
FCP11N60N / FCPF11N60NT Rev. A
Dimensions in Millimeters
8
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Page 9
Mechanical Dimensions
FCP11N60N / FCPF11N60NT N-Channel MOSFET
TO-220F
FCP11N60N / FCPF11N60NT Rev. A
Dimensions in Millimeters
9
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Page 10
TRADEMARKS
tm
®
tm
tm
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
EfficentMax™
EZSWITCH™*
™*
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
®
®
®
®
®
*
®
FPS™
F-PFS™
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
PDP SPM™
Power-SPM™
PowerTrench
®
®
SM
®
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®
®
™
®
®*
The Power Franchise
®
TinyBoost™
TinyBuck™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FCP11N60N / FCPF11N60NT N-Channel MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FCP11N60N / FCPF11N60NT Rev. A
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I41
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