Datasheet FCP7N60N, FCPF7N60NT Datasheet (Fairchild)

SupreMOS

FCP7N60N / FCPF7N60NT

N-Channel MOSFET

600V, 6.8A, 0.52Ω

FCP7N60N / FCPF7N60NT N-Channel MOSFET

December 2009

TM

Features

•R

• Ultra Low Gate Charge ( Typ.Qg = 17.8nC)

• Low Effective Output Capacitance

• 100% Avalanche Tested

• RoHS Compliant

MOSFET Maximum Ratings T

Symbol Parameter FCP7N60N FCPF7N60NT Units

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt

P

D

, T

T

J

T

L

*Drain current limited by maximum junction temperature

= 0.46Ω ( Typ.) @ VGS = 10V, ID = 3.4A

DS(on)

TO-220AB FCP Series

STG

S

G D

Drain to Source Voltage 600 V Gate to Source Voltage ±30 V

Drain Current Drain Current - Pulsed (Note 1) 20.4 20.4 A

Single Pulsed Avalanche Energy (Note 2) 79.4 mJ Avalanche Current 6.8 A Repetitive Avalanche Energy 0.6 mJ MOSFET dv/dt Ruggedness 100 V/ns Peak Diode Recovery dv/dt (Note 3) 4.9 V/ns

Power Dissipation Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds

G S D

o

= 25

C unless otherwise noted

C

-Continuous (T

(T

= 25oC) 64.1 30.5 W

C

- Derate above 25

Description

The SupreMOS MOSFET , Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, A TX power, and industrial power applications.

D

TO-220F FCPF Series

= 25oC) 6.8 6.8*

C

= 100oC) 4.3 4.3*

C

o

C 0.51 0.24 W/oC

G

S

300

Thermal Characteristics

Symbol Parameter FCP7N60N FCPF7N60NT Units

R

θJC θCS

R

θJA

Thermal Resistance, Junction to Case 1.95 4.1 Thermal Resistance, Case to Heak Sink ( Typical) 0.5 0.5 Thermal Resistance, Junction to Ambient 62.5 62.5

A

o

C

o

C

o

C/WR

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FCP7N60N FCP7N60N TO-220AB - - 50

FCPF7N60NT FCPF7N60NT TO-220F - - 50

FCP7N60N / FCPF7N60NT N-Channel MOSFET

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV ∆BV

∆T I

DSS

I

GSS

DSS

J

Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V, TC = 25oC 600 - - V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current VGS = ±30V, V

I

= 1mA, Referenced to 25oC-0.6-V/

D

V

= 480V, V

DS

= 480V, V

V

DS

= 0V - - 10

GS

= 0V, TC = 125oC - - 100

GS

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250µA2.0-4.0V Static Drain to Source On Resistance VGS = 10V, ID = 3.4A - 0.46 0.52 Ω Forward Transconductance VDS = 20V, ID = 3.4A - 8.5 - S

Dynamic Characteristics

C

iss

C

oss

C

rss

C

oss

eff Effective Output Capacitance VDS = 0V to 380V, VGS = 0V - 91 - pF

C

oss

Q

g(tot)

Q

gs

Q

gd

Input Capacitance Output Capacitance - 30 40 pF Reverse Transfer Capacitance - 2.1 3.2 pF

= 100V, VGS = 0V

V

DS

f = 1MHz

Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 17 - pF

Total Gate Charge at 10V Gate to Source Gate Charge - 3.2 6.3 nC Gate to Drain “Miller” Charge - 6.0 11.9 nC

V

= 380V,ID = 3.4A

DS

V

= 10V

GS

(Note 4)

ESR Equivalent Series Resistance (G-S) Drain Open - 2.5 - Ω

- 719 960 pF

- 17.8 35.6 nC

µA

o

C

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time Turn-On Rise Time - 6 22 ns Turn-Off Delay Time - 35 80 ns Turn-Off Fall Time - 12 24 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. I

= 2.3A, RG = 25Ω, Starting TJ = 25°C

AS

3. ISD ≤ 6.8A, di/dt ≤ 200A/µs, VDD ≤ 380V, Starting TJ = 25°C

4. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 6.8 A Maximum Pulsed Drain to Source Diode Forward Current - - 20.4 A Drain to Source Diode Forward Voltage V Reverse Recovery Time Reverse Recovery Charge - 1.8 - µC

= 380V, ID = 3.4A

V

DD

R

= 4.7Ω

G

(Note 4)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/µs

F

=3.4A - - 1.2 V

SD

= 3.4A

SD

-1224ns

-211-ns

FCP7N60N / FCPF7N60NT Rev. A

2

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

30

10

V

= 15.0 V

GS

10.0 V

6.0 V

4.5 V

4.0 V

60

10

150oC

FCP7N60N / FCPF7N60NT N-Channel MOSFET

, Drain Current[A]

D

I

1

0.5

0.1 1 10 30

*Notes:

1. 250

2. T

µs Pulse Test

= 25oC

C

VDS, Drain-Source Voltage[V]

, Drain Current[A]

D

1

I

0.2 2468

VGS, Gate-Source Voltage[V]

25oC

-55oC

*Notes:

1. V

2. 250

= 20V

DS

µs Pulse Test

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

1.0

0.8

[Ω],

0.6

DS(ON)

R

0.4

Drain-Source On-Resistance

0.2 0 4 8 12 16 20

ID, Drain Current [A]

VGS = 10V

VGS = 20V

*Note: TC = 25oC

100

10

150oC

25oC

1

, Reverse Drain Current [A]

S

I

0.1

0.4 0.6 0.8 1.0 1.2

*Notes:

1. VGS = 0V

2. 250

µs Pulse Test

VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10000

1000

100

Capacitances [pF]

10

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

= C

rss

1

0.1 1 10 100 600

FCP7N60N / FCPF7N60NT Rev. A

gd

VDS, Drain-Source Voltage [V]

10

*Note:

1. V

= 0V

GS

2. f = 1MH z

C

iss

C

oss

C

gd

rss

8

6

4

, Gate-Source Voltage [V]

GS

V

2

0

0369121518

VDS = 120V V

= 380V

DS

= 480V

V

DS

*Note: ID = 3.4A

Qg, Total Gate Charg e [nC]

3

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Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature

1.2

1.1

3.0

2.5

2.0

FCP7N60N / FCPF7N60NT N-Channel MOSFET

1.0

, [Normalized]

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-80 -40 0 40 80 120 160 TJ, Junction Temperature [oC]

*Notes:

1. V

2. I

D

= 0V

GS

= 1mA

1.5

, [Normalized]

1.0

DS(on)

R

Drain-Source On-Resistance

0.5

0.0

-80 -40 0 40 80 120 160 TJ, Junction Temperature [oC]

*Notes:

1. V

2. I

GS

= 3.4A

D

= 10V

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area

_ FCP7N60N

100

10

1

, Drain Current [A]

D

I

0.1

0.01

Operation in This Area is Limited by R

DS(on)

*Notes:

1. T

C

2. T

J

3. Single Pulse

0.1 1 10 100 1000

VDS, Drain-Source Voltage [V]

10ms

DC

= 25oC

= 150oC

100µs

1ms

20µs

_ FCPF7N60NT

100

10

1

, Drain Current [A]

D

I

0.1

0.01

Operation in This Area is Limited by R

0.1 1 10 100 1000

VDS, Drain-Source Voltage [V]

10ms

DC

DS(on)

*Notes:

= 25oC

1. T

C

2. T

= 150oC

J

3. Single Pulse

20µs

100µs

1ms

Figure 11. Maximum Drain Current vs. Case Temperature

8

6

4

, Drain Current [A]

D

I

2

0

25 50 75 100 125 150

TC, Case Temperatu re [oC]

FCP7N60N / FCPF7N60NT Rev. A

4

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Typical Performance Characteristics (Continued)

Figure 12. Transient Thermal Response Curve

3

]

0.5

1

θJC

0.2

Thermal Response [Z

0.1

0.01

0.1

0.05

0.02

0.01

Single pulse

-5

10

-4

10

-3

10

Rectangular Pulse Duration [sec]

P

DM

P

DM

*Notes:

1. Z

θJC

2. Duty Factor, D= t

3. TJM - TC = PDM * Z

10

_ FCP7N60N

t

1

t

2

t

1

t

2

(t) = 1.95oC/W Max.

1/t2

θJC

-2

FCP7N60N / FCPF7N60NT N-Channel MOSFET

(t)

-1

10

Figure 13. Transient Thermal Response Curve

5

0.5

]

θJC

1

0.2

Thermal Response [Z

0.1

0.01

0.1

0.05

0.02

0.01

Single pulse

-5

10

-4

10

-3

10

Rectangular Pulse Duration [sec]

-2

10

-1

10

P

DM

*Notes:

1. Z

θJC

2. Duty Factor, D= t

3. TJM - TC = PDM * Z

110

_ FCPF7N60NT

t

1

t

2

(t) = 4.1oC/W Max.

1/t2

θJC

(t)

100

FCP7N60N / FCPF7N60NT Rev. A

5

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Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FCP7N60N / FCPF7N60NT N-Channel MOSFET

FCP7N60N / FCPF7N60NT Rev. A

Unclamped Inductive Switching Test Circuit & Waveforms

6

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

g

+

V

DS

_

L

LL

Same Type

as DUT

• dv/dt controlled by R

•ISDcontrolled by pulse period

G

V

GS

R

G

DUT

I

SD

Driver

V

DD

FCP7N60N / FCPF7N60NT N-Channel MOSFET

V

GS

( D riv er )

I

SD

( DUT )

V

DS

( DUT )

G ate Pulse W idth

--------------------------

D =

G ate Pulse Period

IFM, Body Diode Forw ard Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

SD

Body Diode

Forw ard Volta

e Drop

di/dt

10V

V

DD

FCP7N60N / FCPF7N60NT Rev. A

7

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Mechanical Dimensions

FCP7N60N / FCPF7N60NT N-Channel MOSFET

TO-220AB

FCP7N60N / FCPF7N60NT Rev. A

Dimensions in Millimeters

8

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Mechanical Dimensions

FCP7N60N / FCPF7N60NT N-Channel MOSFET

TO-220F

FCP7N60N / FCPF7N60NT Rev. A

Dimensions in Millimeters

9

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TRADEMARKS

®

tm

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor an d/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™*

™*

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter

®

® ®

®

*

®

FPS™ F-PFS™ FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

®

PDP SPM™ Power-SPM™

PowerTrench

®

SM

PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3

®

SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

®

™

®

The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™

®

TRUECURRENT™*

®

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™

®*

XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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FCP7N60N / FCPF7N60NT N-Channel MOSFET

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As used herein:

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2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

expected to result in a significant injury of the user.

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Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I41

FCP7N60N / FCPF7N60NT Rev. A www.fairchildsemi.com10

Datasheet FCP7N60N, FCPF7N60NT Datasheet (Fairchild)

Specifications and Main Features

Frequently Asked Questions

User Manual

FCP7N60N / FCPF7N60NT

Thermal Characteristics

Package Marking and Ordering Information