Datasheet EMIF10-COM01F2 Datasheet (ST)

Page 1
10-line IPAD™, EMI filter including ESD protection
Features
■ EMI symmetrical (I/O) low-pass filter
■ Lead free package
■ Very low PCB space consuming: < 6 mm
■
Very thin package: 0.65 mm
■ High efficiency in ESD suppression on both
input & output pins
■ High reliability offered by monolithic integration
EMIF10-COM01F2
Flip Chip
(25 bumps)
Complies with the following standard:
■ IEC 61000-4-2 level 4
– 15 kV (air discharge) – 8 kV (contact discharge)
Applications
EMI filtering and ESD protection for:
■ Computers and printers
■ Communication systems
■ Mobile phones
Description
The EMIF10-COM01F2 is a highly integrated device designed to suppress EMI / RFI noise in all systems subjected to electromagnetic interferences. The EMIF10 Flip-Chip packaging means the package size is equal to the die size.
Additionally, this filter includes an ESD protection circuitry which prevents damage to the application when subjected to ESD surges up to 15 kV.

Figure 1. Pin configuration (bump side)

54
I5
3
21
I3
I9 I8I10
GNDGND
I1
I2I4
I6
I7
GNDGND GND
0609 08010 07
0204 0305
01
A
B
C
D
E

Figure 2. Basic cell configuration

Low-pass Filter
Input
R = 200
I/O
C = 45 pF
line
Ω
Output
TM: IPAD is a trademark of STMicroelectronics.
April 2008 Rev 5 1/7
www.st.com
7
Page 2
Characteristics EMIF10-COM01F2

1 Characteristics

Table 1. Absolute ratings (T
Symbol Parameter and test conditions Value Unit
amb
= 25 °C)
V
T
T
Table 2. Electrical characteristics (T
ESD discharge IEC61000-4-2, air discharge
PP
ESD discharge IEC61000-4-2, contact discharge
Junction temperature 125 °C
T
j
Operating temperature range - 40 to + 85 °C
op
Storage temperature range - 55 to + 150 °C
stg
Symbol Parameter
V
V
V
R
C
Breakdown voltage
BR
I
Leakage current @ V
RM
Stand-off voltage
RM
Clamping voltage
CL
R
Dynamic impedance
d
I
Peak pulse current
PP
Resistance between Input and Output
I/O
Input capacitance per line
line
Symbol Test conditions Min. Typ. Max. Unit
V
BRIR
I
RM
R
R
I/O
C
line
t
LH
= 1 mA 6 8 10 V
VRM = 3 V per line 500 nA
IPP = 10 A, tp = 2.5 µs 1 Ω
d
At 0 V bias 45 50 pF
V
= 2.8 V R
input
Figure 3. S21(db) attenuation
measurement
0.00
0.00
0.00
dB
dB
dB
-10.00
-10.00
-10.00
-20.00
-20.00
-20.00
-30.00
-30.00
-30.00
-40.00
-40.00
-40.00
-50.00
-50.00
-50.00
100.0k 1.0M 10.0M 100.0M 1.0G
100.0k 1.0M 10.0M 100.0M 1.0G
100.0k 1.0M 10.0M 100.0M 1.0G
(1)
f/Hz
f/Hz
f/Hz
amb
15
8
= 25 °C)
kV
I
RM
V
CL
V
V
RM
BR
slope : 1 / R d
I
RM
I
R
I
PP
V
180 200 220 Ω
= 100 kΩ 25 ns
load

Figure 4. Analog crosstalk

0.00
0.00
dB
dB
-10.00
-10.00
-20.00
-20.00
-30.00
-30.00
-40.00
-40.00
-50.00
-50.00
-60.00
-60.00
-70.00
-70.00
-80.00
-80.00
-90.00
-90.00
-100.00
-100.00
100.0k 1.0M 10.0M 100.0M 1.0G
100.0k 1.0M 10.0M 100.0M 1.0G
Xtalk 1/2
f/Hz
f/Hz
1. Spikes at high frequencies are induced by the PCB layout
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Page 3
EMIF10-COM01F2 Characteristics
Figure 5. ESD response to IEC 61000-4-2
(+15 kV air discharge) on one input
) and on one output (V
(V
in
V(out1)
V(in1)
out
)

Figure 7. Rise time measurement

EMIF10-COM01F2
In Out
Square signal Generator Vc = 2.8V
Vin
Figure 6. ESD response to IEC 61000-4-2
(-15 kV air discharge) on one input
100k
(Vin) and on one output (V
Vout
out
V(in1)
V(out1)
)

Figure 8. Capacitance versus reverse applied voltage

C(pF)
50
40
30
20
10
012345
VR(V)
F=1MHz
Vosc=30mV
3/7
Page 4
Application information EMIF10-COM01F2

2 Application information

Figure 9. Aplac model

in
200R
MODEL = demif10 MODEL = demif10
sub

2.1 PCB grounding recommendations

In order to ensure a good efficiency in terms of ESD protection and filtering behavior, we recommend to implement microvias (100 µm dia.) between the GND bumps and the GND layer. GND bumps can be connected together in PCB layer 1, and in addition, if possible, use through hole vias (200 µm dia.) in both sides of filter to improve contact to GND (layer). This layout will minimize the distance to the ground and thus parasitic inductances. In addition, we recommend to have GND plane wherever possible.

3 Ordering information scheme

out
Demif10 model BV = 7 IBV = 1m CJO = 25p M = 0.3333 RS = 1 VJ = 0.6 TT = 100n

Figure 10. Ordering information scheme

EMI Filter
Number of lines
Information
x = resistance value (Ohms) z = capacitance value / 10(pF) or 3 letters = application 2 digits = version
Package
F = Flip Chip x = 2: Lead-free, pitch = 500 µm, bump = 315 µm
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EMIF yy - xxx zz Fx
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EMIF10-COM01F2 Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at
www.st.com.

Figure 11. Flip Chip package dimensions

500 µm ± 50
315 µm ± 50
500 µm ± 50
2.39 mm ± 30 µm
2.39 mm ± 30 µm
650 µm ± 65

Figure 12. Footprint recommendations Figure 13. Marking

Dot, ST logo xx = marking z = manufacturing location
Copper pad Diameter:
250 µm recommended, 300 µm max
Solder stencil opening: 330 µm
Solder mask opening recommendation:
340 µm min for 300 µm copper pad diameter
yww = datecode
(y = year
ww = week)
E
xyxwz
w
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Ordering information EMIF10-COM01F2

Figure 14. Flip Chip tape and reel specification

Dot identifying Pin A1 location
4 ± 0.1
Ø 1.5 ± 0.1
1.75 ± 0.1 3.5 ± 0.1
8 ± 0.3
0.73 ± 0.05
All dimensions in mm
yww
ST
xxz
E
2.6
yww
xxz
User direction of unreeling

5 Ordering information

Table 3. Ordering information

Order code Marking Package Weight Base qty Delivery mode
EMIF10-COM01F2 FE Flip Chip 8.3 mg 5000 Tape and reel
Note: More information is available in the application notes:
AN1235: “Flip Chip: Package description and recommendations for use”
AN1751: "EMI Filters: Recommendations and measurements"
ST
E
4 ± 0.1
ST
yww
xxz
2.6
E

6 Revision history

Table 4. Document revision history

Date Revision Description of changes
14-Dec-2004 1 First issue.
08-Apr-2005 2 Die shrink.
19-Oct-2005 3
03-Apr-2006 4
17-Apr-2008 5
6/7
Replaced Figures 3 and 13. Added ECOPACK statement.
Reformatted to current standard. Pin identification in Figure 1 updated.
Updated ECOPACK statement. Updated Figure 10,
Figure 11 and Figure 14. Reformatted to current
standards.
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EMIF10-COM01F2
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