Page 1
EMF33
Transistors
Power management,
Dual-chip Bipolar Transistor
EMF33
zApplications zDimensions (Unit : mm)
Power management circ uit
zFeatures
1) DTB513Z (digital transistor) and 2SK3019 (MOS FET) are
housed independently in the EMT6 packa ge.
2) Power switching circuit in a single package.
3) Mounting cost and area can be cut in half.
zStructure
Epitaxial Plannar Silicon T ransistor
zPackaging specifications
zEquivalent circuit
EMT6
0.5
(6)
(2)
(1)
1pin mark
0.22
Abbreviated symbol : F33
1.6
1.0
0.5
(5)
(3)
0.5
(4)
1.2
1.6
0.13
Each lead has same dimensions
Type
Package
Code
Basic ordering unit (pieces)
Taping
T2R
8000
EMF33
zAbsolute maximum ratings (Ta=25°C)
<Tr1>
Parameter
Supply voltage
Input voltage
Collector current
∗ Characteristics of built-in transistor.
Symbol
CC
IN
I
C(max)
<Tr2>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Reverse drain current
∗ PW≤10ms DUTY CYCLE≤50%
Continous
Pulsed
Continous
Pulsed
Symbol
DSS
GSS
I
D
I
DP
I
DR
I
DRP
<Tr1, Tr2 in common>
Parameter
Power dissipation
Junction temperature
Range of storage temperature
∗ Each terminal mounted on a recommended land.
Symbol
P
D
Tj
Tstg
Limits Unit
−12
−10 to +5
∗
−500
Limits Unit
30
±20
100
∗
∗
Limits Unit
150
∗
120
150
VV
VV
mA
VV
VV
mA
mA200
mA100
mA200
mW / TOTAL
mW / ELEMENT
°C
°C−55 to +150
Tr1
∗1 ESD protection diode
∗2 Body diode
1/R2
=1kΩ/10kΩ
Tr1 : R
Tr2 : MOS FET
(4)(5)(6)
∗1
Tr2
∗2
R
2
R
1
(3)(2)(1)
(1) Emitter
(2) Base
(3) Drain
(4) Source
(5) Gate
(6) Collector
Rev.A 1/4
Page 2
Transistors
zElectrical characteristics (T a=25°C)
<Tr1>
Parameter Symbol
V
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
∗ Characteristics of built-in transistor.
<Tr2>
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-threshold voltage
Static drain-source on-resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
I
∗
f
T
R1
R2/R1 8 10 12 −
I
GSS
V
(BR)DSS
I
DSS
V
GS(th)
R
DS(on)
Y
fs
C
iss
C
oss
C
rss
d(on)
t
r
t
d(off)
t
f
t
Min.
Typ. Max.
Unit
−−−0.3 V V
CC
Conditions
= −5V, IO= −100µA
−2.5 −−VVO= −0.3V, IO= −20mA
−−60 −300 mV VO= −100mA, II= −5mA
−−−6.4 mA VI= −5V
−−−0.5 uA VCC= −12V, VI= 0V
140
−−
− 260 −−V
−
= −5V, IO= −100mAG
V
O
= −10V, IE= 5mA, f=100MHz
CE
0.7 1 1.3 kΩ
Min.
Typ. Max.
−−±1 µAV
Unit
GS
Conditions
= ±20V, VDS=0V
30 −−−ID= 10µA, VGS=0A
−−1.0 µAVDS= 30V, VGS=0V
0.8 − 1.5 V VDS= 3V, ID=100µA
−
58
−
713
20 −−ms V
− 13 − pF
− 9 − pF
− 4 − pF
− 15 − ns
− 35 − ns
− 80 − ns
− 80 − ns
Ω
= 10mA, VGS= 4V
I
D
Ω
= 1mA, VGS= 2.5V
I
D
DS
V
DS
GS
V
f=1MHz
I
= 10mA
D
V
DD
V
GS
R
= 500Ω
L
R
GS
= 3V, ID= 10mA
= 5V
= 0V
= 5V
= 5V
= 10Ω
EMF33
Rev.A 2/4
Page 3
Transistors
-
-
zElectrical characteristic curves
<Tr1>
500
Ta=25
450
400
350
(mA)
O
300
250
200
150
100
50
OUTPUT CURRENT : I
Fig.1 Output Current vs. Output Voltage
℃
pulsed
0
012
OUTPUT VOLTAGE : VO(V)
1000
VO=5V
I
100
pulsed
Ta=125
10
DC CURRENT GAIN : G
1
0.1 1 10 100 1000
Fig.4 DC Current Gain vs. Output Current
OUTPUT CURRENT : IO (mA)
<Tr2>
0.15
0.1
0.05
DRAIN CURRENT : ID (A)
Fig.1 Typical output characteristics
4V
3.5V
0
012345
DRAIN-SOURCE VOLTAGE : VDS (V)
VGS=1.5V
I
℃
Ta=-40
3V
2.5V
2V
=5mA
I
Ta=25
℃
I
=4.5mA
I
℃
Ta=25°C
Pulsed
=4mA
I
I
I
=3.5mA
I
=3mA
I
I
I
=2.5mA
I
=2mA
I
I
=1.5mA
I
I
=1mA
I
I
I
=0.5mA
I
I
=0
I
10
Vo=0.3V
pulsed
(on) (V)
I
1
INPUT VOLTAGE : V
0.1
0.1 1 10 100 1000
OUTPUT CURRENT : IO (mA)
Fig.2 Input Voltage vs. Output Current
1
IO/II=20/1
pulsed
(on) (V)
O
0.1
OUTPUT VOLTAGE : V
0.01
-
1 10 100 1000
OUTPUT CURRENT : IO (mA)
Fig.5 Output Voltage vs. Output Current
200m
VDS=3V
100m
Pulsed
50m
20m
10m
5m
2m
1m
0.5m
DRAIN CURRENT : ID (A)
0.2m
0.1m
04
1
GATE-SOURCE VOLTAGE : VGS (V)
Fig.2 Typical transfer characteristics
Ta=125
Ta=-40
Ta=125°C
75°C
25°C
−25°C
2
EMF33
100
VCC=5V
pulsed
10
(mA)
O
Ta=-40
Ta=25
Ta=125
℃
℃
1
0.1
OUTPUT CURRENT : I
0.01
00.511.52
INTPUT VOLTAGE : VI (off) (V)
Fig.3 Output Current vs. Input Voltage
℃
Ta=25
℃
℃
-
2
1.5
1
0.5
GATE THRESHOLD VOLTAGE : VGS(th) (V)
0
−25 25 50 75 100 125 150
3
−50 0
CHANNEL TEMPERATURE : Tch (°C)
Fig.3 Gate threshold voltage vs.
channel temperature
Ta=125
Ta=25
Ta=-40
VDS=3V
D=0.1mA
I
Pulsed
℃
℃
℃
Rev.A 3/4
Page 4
Transistors
50
(Ω)
DS(on)
Ta=125°C
20
10
5
−25°C
75°C
25°C
V
GS
Pulsed
=4V
EMF33
50
Ta=125°C
(Ω)
DS(on)
20
10
5
75°C
25°C
−25°C
V
GS
Pulsed
=2.5V
15
DS(on) (Ω)
10
Ta=25°C
Pulsed
2
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.5
0.001
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
Fig.4 Static drain-source on-state
resistance vs. drain current (Ι)
9
8
(Ω)
7
DS(on)
6
5
4
3
2
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0
Fig.7 Static drain-source on-state
ID=100mA
ID=50mA
−50 0 25 150
−25 50 75 100 125
CHANNEL TEMPERATURE : Tch (°C)
resistance vs. channel
temperature
200m
(A)
100m
DR
50m
20m
10m
V
GS
=4V
5m
2m
1m
0.5m
REVERSE DRAIN CURRENT : I
0.2m
0.1m
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.10 Reverse drain current vs.
source-drain voltage (ΙΙ)
0V
VGS=4V
Pulsed
Ta=25°C
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.5
Fig.5 Static drain-source on-state
0.005
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
0.002
0.001
50
20
10
5
2
CAPACITANCE : C (pF)
1
0.5
1.510.50
0.1
2
1
0.001
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
resistance vs. drain current (ΙΙ)
0.5
0.2
Ta=−25°C
0.1
0.05
0.02
0.01
Fig.11 Typical capacitance vs.
25°C
75°C
125°C
0.0001
0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05
DRAIN CURRENT : ID (A)
Fig.8 Forward transfer
admittance vs. drain current
0.2 0.5 1 2 5 10 20 50
DRAIN-SOURCE VOLTAGE : VDS (V)
drain-source voltage
V
Pulsed
0.1 0.2 0.5
Ta=25°C
f=1MH
VGS=0V
C
iss
C
oss
C
rss
STATIC DRAIN-SOURCE
DS
=3V
Z
5
ON-STATE RESISTANCE : R
0
0 5 10 15 20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
200m
(A)
100m
DR
50m
20m
10m
5m
2m
1m
0.5m
REVERSE DRAIN CURRENT : I
0.2m
0.1m
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.9 Reverse drain current vs.
source-drain voltage (Ι)
1000
500
200
100
50
20
10
SWITHING TIME : t (ns)
5
2
0.1
t
f
t
d(off)
t
r
t
d(on)
0.2 0.5 1 2 5 10 20 50
DRAIN CURRENT : ID (mA)
ID=0.1A
ID=0.05A
Ta=125°C
−25°C
Fig.12 Switching characteristics
75°C
25°C
V
GS
=0V
Pulsed
Ta=25°C
DD
=5V
V
GS
=5V
V
G
=10Ω
R
Pulsed
1.510.50
100
Rev.A 4/4
Page 5
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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Appendix1-Rev2.0
Page 6
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