Datasheet EFA480C Datasheet (Excelics)

Excelics

EFA480C

DATA SHEET

Low Distortion GaAs Power FET

104

D

G

94

34.0

12.5

680

160

120

40

D

G

72

155

S

+34.0dBm TYPICAL OUTPUT POWER

•

18.0dB TYPICAL POWER GAIN AT 2GHz

•

0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE

•

PASSIVATION AND PLATED HEAT SINK

Si

•

3N4

ADVANCED EPITAXIAL DOPING PROFILE

•

PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY

Idss SORTED IN 80mA PER BIN RANGE

•

ELECTRICAL CHARACTERISTICS (Ta = 25 OC)

SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT

P

1dB

G

1dB

PAE

Output Power at 1dB Compression f= 2GHz
Vds=8V, Ids=50% Idss f= 4GHz
Gain at 1dB Compression f= 2GHz
Vds=8V, Ids=50% Idss f= 4GHz
Gain at 1dB Compression
Vds=8V, Ids=50% Idss f= 2GHz

75

SS

100

Chip Thickness: 75 ± 13 microns
All Dimensions In Microns

32.0 34.0

16.0 18.0

620

dBm

dB

%

Idss
Gm
Vp
BVgd
BVgs
Rth

Saturated Drain Current Vds=3V, Vgs=0V 800 1360 1760 mA
Transconductance Vds=3V, Vgs=0V 560 720 mS
Pinch-off Voltage Vds=3V, Ids=10mA -2.0 -3.5 V
Drain Breakdown Voltage Igd=4.8mA -12 -15 V
Source Breakdown Voltage Igs=4.8mA -7 -14 V
Thermal Resistance (Au-Sn Eutectic Attach) 12

MAXIMUM RATINGS AT 25OC

SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS2

Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Drain-Source Vo ltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation

12V

-8V
Idss
120mA
32dBm
175oC

-65/175oC

11.4 W

8V

-4V

1.2A
20mA
@3dB Compression
150oC

-65/150oC

9.5 W

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com

o

C/W

EFA480C

DATA SHEET

S-PARAMETERS

8V, 1/2 Idss

FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --­(GHz) MAG ANG MAG ANG MAG ANG MAG ANG

0.500 0.944 -119.8 9.669 115.5 0.023 33.8 0.515 -166.9

1.000 0.931 -149.2 5.352 97.6 0.026 24.2 0.553 -172.1

1.500 0.928 -161.0 3.646 88.3 0.027 23.1 0.564 -174.0

2.000 0.927 -167.6 2.756 81.6 0.027 24.4 0.569 -175.0

2.500 0.927 -172.0 2.213 75.9 0.028 26.6 0.574 -175.4

3.000 0.927 -175.4 1.849 70.7 0.029 29.2 0.580 -175.7

3.500 0.928 -178.1 1.587 66.0 0.030 31.9 0.585 -175.9

4.000 0.928 179.6 1.389 61.4 0.031 34.6 0.591 -176.0

4.500 0.929 177.5 1.235 57.0 0.032 37.2 0.597 -176.1

5.000 0.930 175.6 1.112 52.8 0.034 39.6 0.604 -176.3

5.500 0.931 173.9 1.010 48.7 0.035 41.9 0.612 -176.5

6.000 0.932 172.3 0.925 44.7 0.037 44.1 0.620 -176.7

6.500 0.933 170.7 0.853 40.8 0.039 46.0 0.628 -176.9

7.000 0.934 169.2 0.790 37.0 0.040 47.8 0.636 -177.2

7.500 0.935 167.7 0.735 33.3 0.042 49.4 0.645 -177.5

8.000 0.937 166.3 0.687 29.7 0.044 50.8 0.654 -177.9

8.500 0.938 164.9 0.643 26.2 0.047 52.1 0.664 -178.3

9.000 0.939 163.6 0.604 22.8 0.049 53.2 0.673 -178.8

9.500 0.941 162.3 0.569 19.5 0.051 54.1 0.683 -179.4

10.000 0.942 160.9 0.537 16.2 0.054 54.9 0.693 -179.9

Note: The data included 0.7 mils diameter Au bonding wires:
2 gate wires, 20 mils each; 2 drain wires, 12 mils each; 6 source wires, 7 mils each.

Low Distortion GaAs Power FET