Page 1
Excelics
EFA120A
DATA SHEET
Low Distortion GaAs Power FET
+28.0dBm TYPICAL OUTPUT POWER
•
9.5dB TYPICAL POWER GAIN AT 12GHz
•
0.3 X 1200 MICRON RECESSED
•
“MUSHROOM” GATE
PASSIVATION
Si
•
3N4
ADVANCED EPITAXIAL DOPING PROFILE
•
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 20mA PER BIN RANGE
•
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT
P
1dB
G
1dB
PAE
Output Power at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
Gain at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss f=12GHz
40
S
95
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
26.0 28.0
8.0 9.5
670
116
50
DD
GGG
S
50
80
28.0
7.0
34
D
SS
48
340
100
dBm
dB
%
Idss
Gm
Vp
BVgd
BVgs
Rth
Saturated Drain Current Vds=3V, Vgs=0V 200 340 440 mA
Transconductance Vds=3V, Vgs=0V 140 180 mS
Pinch-off Voltage Vds=3V, Ids=3.0mA -2.0 -3.5 V
Drain Breakdown Voltage Igd=1.2mA -12 -15 V
Source Breakdown Voltage Igs=1.2mA -7 -14 V
Thermal Resistance (Au-Sn Eutectic Attach) 37
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Drain-Source Vo ltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
12V
-8V
Idss
30mA
26dBm
175oC
-65/175oC
3.7 W
8V
-4V
385mA
5mA
@ 3dB Compression
150oC
-65/150oC
3.1 W
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
o
C/W
Page 2
EFA120A
DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.943 -63.6 9.082 141.1 0.034 54.8 0.243 -57.3
2.0 0.912 -102.6 6.636 117.0 0.049 36.0 0.247 -92.6
3.0 0.896 -125.1 4.987 101.3 0.055 24.4 0.259 -111.5
4.0 0.892 -139.2 3.926 89.9 0.057 17.1 0.280 -121.4
5.0 0.889 -149.7 3.190 80.2 0.056 12.6 0.309 -128.0
6.0 0.890 -155.8 2.675 72.6 0.056 9.4 0.337 -131.7
7.0 0.892 -160.3 2.294 65.8 0.055 7.0 0.369 -134.6
8.0 0.895 -163.5 2.003 59.7 0.053 5.4 0.399 -136.9
9.0 0.898 -166.1 1.773 54.1 0.051 3.7 0.430 -139.1
10.0 0.899 -168.3 1.588 48.9 0.048 3.2 0.457 -140.9
11.0 0.903 -170.5 1.442 43.6 0.047 2.4 0.484 -143.3
12.0 0.906 -172.2 1.318 38.6 0.047 2.8 0.508 -145.6
13.0 0.911 -174.5 1.215 33.6 0.045 2.3 0.530 -148.4
14.0 0.912 -177.1 1.128 28.4 0.044 1.8 0.550 -151.3
15.0 0.914 -179.8 1.055 23.0 0.044 1.7 0.570 -154.9
16.0 0.919 176.8 0.986 17.3 0.044 1.3 0.587 -158.8
17.0 0.921 173.2 0.926 11.6 0.044 0.1 0.605 -163.1
18.0 0.924 169.5 0.868 5.7 0.045 -0.2 0.625 -167.3
19.0 0.927 166.1 0.811 -0.2 0.045 -1.6 0.643 -172.3
20.0 0.931 162.8 0.757 -5.8 0.045 -1.7 0.666 -176.9
21.0 0.947 162.4 0.655 -10.0 0.041 -1.6 0.705 178.4
22.0 0.952 160.7 0.608 -14.5 0.042 -0.3 0.726 174.7
23.0 0.957 158.9 0.564 -18.9 0.043 1.2 0.749 172.0
24.0 0.959 158.2 0.527 -22.6 0.043 4.5 0.769 169.7
25.0 0.965 157.5 0.499 -25.5 0.043 7.3 0.785 167.5
26.0 0.968 157.2 0.474 -29.0 0.046 10.0 0.803 166.2
Note: The data included 0.7 mils diameter Au bonding wires:
3 gate wires, 15 mils each; 3 drain wires, 20 mils each; 8 source wires, 7 mils each.
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