Datasheet EFA480BV Datasheet (Excelics)

960

50

120

48

95

40

156

420

45

110

D

G

D

D D

G G G

Excelics EFA480B/EFA480BV

PRELIMINARY DATA SHEET

Low Distortion GaAs Power FET

•• +34.0dBm TYPICAL OUTPUT POWER

•• 6.0dB TYPICAL POWER GAIN FOR EFA480B AND

7.5dB FOR EFA480BV AT 12GHz

•• 0.5X 4800 MICRON RECESSED “MUSHROOM” GATE

•• Si

3N4

PASSIVATION

•• ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY

•• EPA480BV WITH VIA HOLE SOURCE GROUNDING

•• Idss SORTED IN 80mA PER BIN RANGE

ELECTRICAL CHARACTERISTICS (Ta = 25 OC)

SYMBOLS PARAMETERS/TEST CONDITIONS

EFA480B

EFA480BV

UNIT

MIN TYP MAX MIN TYP MAX

P

1dB

Output Power at 1dB Compression f=8GHz
Vds=8V, Ids=50% Idss f=12GHz 32.0

34.0

34.0

32.0

34.0

34.0

dBm

G

1dB

Gain at 1dB Compression f=8GHz
Vds=8V, Ids=50% Idss f=12GHz

4.5

10.0

6.0

5.0

12.0

7.0

dB

PAE

Gain at 1dB Compression
Vds=8V, Ids=50% Idss f=12GHz

32

36

%

Idss

Saturated Drain Current Vds=3V, Vgs=0V 800 1360 1760 800 1360 1760 mA

Gm

Transconductance Vds=3V, Vgs=0V 560 720 560 720 mS

Vp

Pinch-off Voltage Vds=3V, Ids=10mA -2.0 -3.5 -2.0 -3.5 V

BVgd

Drain Breakdown Voltage Igd=4.8mA -12 -15 -12 -15 V

BVgs

Source Breakdown Voltage Igs=4.8mA -7 -14 -7 -14 V

Rth

Thermal Resistance (Au-Sn Eutectic Attach) 10 8

o

C/W

MAXIMUM RATINGS AT 25OC

SYMBOLS PARAMETERS

EFA480B EFA480BV

ABSOLUTE1 CONTINUOUS2 ABSOLUTE1 CONTINUOUS2

Vds

Drain-Source Voltage 12V 8V 12V 8V

Vgs

Gate-Source Voltage -8V -3V -8V -3V

Ids

Drain Current Idss 1.4A Idss 1.75A

Igsf

Forward Gate Current 120mA 20mA 120mA 20mA

Pin

Input Power 32dBm @ 3dB

Compression

32dBm @ 3dB

Compression

Tch

Channel Temperature 175oC 150oC 175oC 150oC

Tstg

Storage Temperature -65/175oC -65/150oC -65/175oC -65/150oC

Pt

Total Power Dissipation 14W 11W 17W 14W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: [phone] Fax: [phone] Web Site: www.excelics.com

Chip Thickness: 60 ± 10 microns
All Dimensions In Microns

: Via Hole No Via Hole For EFA480B

EFA480B/EFA480BV

PRELIMINARY DATA SHEET

Low Distortion GaAs Power FET

S-PARAMETERS
EFA480B 8V, 1/2 Idss

FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --­(GHz) MAG ANG MAG ANG MAG ANG MAG ANG

1.0 0.944 -149.6 6.808 97.1 0.021 20.4 0.444 -166.1

2.0 0.940 -165.7 3.472 80.6 0.022 17.4 0.481 -167.7

3.0 0.946 -172.1 2.290 69.2 0.022 20.0 0.514 -166.7

4.0 0.950 -176.7 1.685 59.5 0.021 24.8 0.554 -165.3

5.0 0.954 179.6 1.281 51.0 0.020 31.0 0.605 -164.3

6.0 0.956 176.5 1.040 43.1 0.020 38.9 0.643 -162.5

7.0 0.959 173.5 0.864 36.1 0.021 44.2 0.682 -161.0

8.0 0.961 170.7 0.728 29.9 0.021 50.4 0.710 -159.0

9.0 0.965 169.0 0.620 24.4 0.023 55.5 0.733 -158.2

10.0 0.968 169.5 0.538 20.0 0.024 63.4 0.753 -158.5

11.0 0.970 171.2 0.480 15.1 0.026 63.9 0.777 -162.5

12.0 0.968 172.1 0.428 10.2 0.029 65.8 0.794 -165.8

14.0 0.966 168.4 0.348 0.2 0.033 63.5 0.835 -170.5

16.0 0.963 165.6 0.290 -11.1 0.035 56.8 0.871 -179.3

18.0 0.960 154.2 0.238 -23.5 0.036 46.7 0.901 176.7

20.0 0.964 146.1 0.194 -34.0 0.039 40.8 0.920 171.6

22.0 0.965 138.6 0.154 -43.1 0.042 35.7 0.931 168.0

24.0 0.971 139.0 0.117 -45.2 0.044 36.9 0.946 165.8

26.0 0.968 148.0 0.089 -41.9 0.050 39.7 0.950 158.4

EFA480BV 8V, 1/2 Idss

FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --­(GHz) MAG ANG MAG ANG MAG ANG MAG ANG

1.0 0.939 -132.8 6.946 105.6 0.024 22.8 0.504 -165.9

2.0 0.943 -157.5 3.642 86.7 0.026 11.2 0.519 -167.8

3.0 0.938 -167.3 2.433 74.8 0.025 6.2 0.555 -167.4

4.0 0.945 -173.1 1.802 65.2 0.024 4.7 0.580 -166.3

5.0 0.944 179.1 1.430 56.0 0.022 2.9 0.608 -161.9

6.0 0.950 175.5 1.170 47.9 0.021 2.8 0.635 -162.0

7.0 0.952 174.3 0.976 41.1 0.020 3.6 0.664 -163.4

8.0 0.955 173.8 0.827 34.2 0.019 4.4 0.691 -167.0

9.0 0.961 173.5 0.707 27.6 0.017 7.2 0.723 -170.3

10.0 0.963 172.8 0.601 23.5 0.016 6.4 0.764 -169.0

11.0 0.971 172.1 0.535 15.9 0.016 10.5 0.767 -174.8

12.0 0.973 171.6 0.468 10.4 0.015 16.2 0.789 -177.6

14.0 0.979 170.1 0.364 1.5 0.014 19.3 0.834 -178.8

16.0 0.975 166.5 0.294 -8.8 0.014 15.6 0.865 178.1

18.0 0.982 163.0 0.248 -17.1 0.015 18.0 0.891 177.3

20.0 0.980 160.4 0.217 -26.0 0.016 18.1 0.906 172.9

22.0 0.972 156.2 0.188 -35.3 0.017 14.6 0.920 168.5

24.0 0.972 155.8 0.159 -42.5 0.019 18.0 0.937 161.4

26.0 0.976 152.7 0.137 -50.4 0.022 22.6 0.945 156.1

Note: The data included 0.7 mils diameter Au bonding wires; 4 gate wires, 15 mils each; 4 drain wires, 20 mils each;

10 source wires, 7 mils each; no source wires for EFA480BV.