Datasheet EFA480B Datasheet (Excelics)

Excelics

EFA480B

DATA SHEET

Low Distortion GaAs Power FET

+34.0dBm TYPICAL OUTPUT POWER

•

10.0dB TYPICAL POWER GAIN AT 8GHz

•

0.5 X 4800 MICRON RECESSED

•

“MUSHROOM” GATE

PASSIVATION AND PLATED HEAT SINK

Si

•

3N4

ADVANCED EPITAXIAL DOPING PROFILE

•

PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY

Idss SORTED IN 80mA PER BIN RANGE

•

40

ELECTRICAL CHARACTERISTICS (Ta = 25 OC)

SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT

P

1dB

G

1dB

PAE

Output Power at 1dB Compression f = 8GHz
Vds=8V, Ids=50% Idss f =12GHz
Gain at 1dB Compression f = 8GHz
Vds=8V, Ids=50% Idss f =12GHz
Gain at 1dB Compression
Vds=8V, Ids=50% Idss f =8GHz

D

G

S

95

Chip Thickness: 50 ± 10 microns
(with > 20 microns Gold Plated Heat Sink (PHS) )
All Dimensions In Microns

120

32.0

4.0

960

156

50

D

GGG

SSS

45

DD

34.0

34.0

10.0

6.0

35

S

dBm

dB

%

48

420

110

Idss
Gm
Vp
BVgd
BVgs
Rth

Saturated Drain Current Vds=3V, Vgs=0V 800 1360 1760 mA
Transconductance Vds=3V, Vgs=0V 560 720 mS
Pinch-off Voltage Vds=3V, Ids=10mA -2.0 -3.5 V
Drain Breakdown Voltage Igd=4.8mA -12 -15 V
Source Breakdown Voltage Igs=4.8mA -7 -14 V
Thermal Resistance (Au-Sn Eutectic Attach) 10

MAXIMUM RATINGS AT 25OC

SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS2

Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Drain-Source Vo ltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation

12V

-8V
Idss
120mA
32dBm
175oC

-65/175oC
14 W

8V

-4V

1.4A
20mA
@3dB Compression
150oC

-65/150oC
11 W

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com

o

C/W

EFA480B

DATA SHEET

Low Distortion GaAs Power FET

S-PARAMETERS

8V, 1/2 Idss

FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --­(GHz) MAG ANG MAG ANG MAG ANG MAG ANG

0.500 0.944 -115.5 11.585 117.1 0.019 33.5 0.384 -159.9

1.000 0.929 -145.4 6.478 98.5 0.021 21.3 0.425 -165.4

1.500 0.926 -157.1 4.413 88.9 0.021 18.2 0.440 -166.5

2.000 0.925 -163.3 3.326 81.9 0.021 17.7 0.453 -166.2

2.500 0.925 -167.2 2.659 76.0 0.021 18.5 0.465 -165.6

3.000 0.925 -169.9 2.208 70.8 0.021 20.0 0.479 -164.8

3.500 0.925 -171.9 1.883 65.9 0.021 22.0 0.494 -164.1

4.000 0.926 -173.6 1.636 61.3 0.021 24.4 0.510 -163.6

4.500 0.927 -174.9 1.443 57.0 0.022 27.0 0.526 -163.2

5.000 0.928 -176.1 1.287 52.7 0.022 29.8 0.543 -162.9

5.500 0.928 -177.1 1.158 48.6 0.022 32.8 0.561 -162.9

6.000 0.929 -178.0 1.050 44.7 0.022 35.9 0.579 -162.9

6.500 0.930 -178.9 0.958 40.8 0.023 39.0 0.596 -163.1

7.000 0.931 -179.7 0.878 37.1 0.023 42.0 0.613 -163.5

7.500 0.932 179.6 0.809 33.5 0.024 45.0 0.630 -163.9

8.000 0.933 178.9 0.747 30.0 0.025 47.8 0.647 -164.5

8.500 0.934 178.3 0.693 26.6 0.026 50.4 0.663 -165.1

9.000 0.935 177.6 0.644 23.4 0.027 52.9 0.679 -165.7

9.500 0.936 177.0 0.600 20.2 0.028 55.1 0.694 -166.5

10.000 0.937 176.4 0.561 17.1 0.030 57.1 0.708 -167.3

Note: The data included 0.7 mils diameter Au bonding wires:

4 gate wires, 20 mils each; 4 drain wires, 12 mils each; 10 source wires, 7 mils each.