Page 1
Excelics
EFA240B/EFA240BV
DATA SHEET
Low Distortion GaAs Power FET
+31.0dBm TYPICAL OUTPUT POWER
•
8.5dB TYPICAL POWER GAIN FOR EFA240B AND
•
10.5dB FOR EFA240BV AT 12GHz
0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE
•
Si3N4 PASSIVATION
•
ADVANCED EPITAXIAL DOPING PROFILE
•
PROVIDES HIGH POWER EFFICIENCY,
40
LINEARITY AND RELIABILITY
EFA240BV WITH VIA HOLE SOURCE GROUNDING
•
Idss SORTED IN 40mA PER BIN RANGE
•
D
G
95
Chip Thickness: 75 ± 20 microns
All Dimensions In Microns
:
No Via Hole For EFA240B
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS
P
1dB
G
1dB
PAE
Idss
Output Power at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
Gain at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
Gain at 1dB Compre s s io n
Vds=8V, Ids=50% Idss f=12GHz
Saturated Drain Current Vds=3V, Vgs=0V 400 680 880 400 680 880 mA
EFA240B
MIN TYP MAX MIN TYP MAX
29.0 31.0
7.0
31.0
8.5
6.0
33
960
156
50
DDD
GG
120
50
Via Hole
EFA240BV
29.0 31.0
9.0
31.0
10.5
8.0
35
48
350
G
100
UNIT
dBm
dB
%
Gm
Vp
BVgd
BVgs
Rth
Transconductance Vds=3V, Vgs=0V 280 360 280 360 mS
Pinch-off Voltage Vds=3V, Ids=6 mA -2.0 -3.5 -2.0 -3.5 V
Drain Breakdown Voltage Igd=2.4mA -12 -15 -12 -15 V
Source Breakdown Voltage Igs=2.4mA -7 -14 -7 -14 V
Thermal Resistance (Au-Sn Eutectic Attach) 20 15
MAXIMUM RATINGS AT 25OC
SYMBOLS
ABSOLUTE1 CONTINUOUS2 ABSOLUTE1 CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage 12V 8V 12V 8V
Gate-Source Voltage -8V -4V -8V -4V
Drain Current Idss 710mA Idss Idss
Forward Gate Current 60mA 10mA 60mA 10mA
Input Power 29dBm @ 3dB
Channel Temperature 175
Storage Temperature -65/175
Total Power Dissipation 6.8W 5.7W 9.1W 7.6W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EFA240B
o
C 150oC 175oC 150oC
o
C -65/150oC -65/175oC -65/150oC
29dBm @ 3dB
Compression
EFA240BV
Compression
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
o
C/W
Page 2
EFA240B/EFA240BV
DATA SHEET
EFA240B
P-1dB & PAE vs Vds
f = 12 GHz
Ids = 50% Idss
35
30
25
20
15
P-1dB (dBm)
10
5
0
45678910
Drain-Source Voltage (V)
S-PARAMETERS
EFA240B 8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.924 -109.6 8.554 117.9 0.035 34.7 0.345 -151.2
2.0 0.910 -140.4 4.879 97.0 0.039 20.8 0.407 -161.6
4.0 0.905 -157.4 2.561 77.8 0.039 14.8 0.447 -166.5
6.0 0.904 -163.9 1.717 64.0 0.037 16.1 0.492 -165.7
8.0 0.907 -168.2 1.295 52.5 0.036 17.7 0.541 -163.7
10.0 0.909 -171.9 1.020 42.7 0.032 22.5 0.594 -162.2
12.0 0.917 -177.5 0.835 32.1 0.031 24.8 0.653 -162.4
14.0 0.924 179.1 0.688 22.4 0.030 25.9 0.706 -165.7
16.0 0.927 174.9 0.569 11.6 0.032 23.2 0.741 -171.9
18.0 0.944 174.3 0.474 2.4 0.033 22.4 0.778 -179.5
20.0 0.953 173.2 0.395 -7.7 0.035 24.0 0.813 171.7
22.0 0.942 175.2 0.326 -13.6 0.040 24.7 0.830 164.7
24.0 0.960 177.3 0.290 -17.6 0.044 30.3 0.848 160.2
26.0 0.951 177.1 0.257 -19.2 0.053 39.2 0.846 160.0
S-PARAMETERS EFA240BV 8V, 1/2 Idss
Note: The data included 0.7 mils diameter Au bonding wires; 4 gate wires, 15 mils each; 4 drain wires, 20 mils each;
10 source wires, 7 mils each; no source wires for EFA240BV.
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.907 -109.0 9.976 119.2 0.033 33.9 0.356 -145.6
2.0 0.905 -142.3 5.784 97.9 0.038 17.7 0.425 -157.1
4.0 0.907 -163.3 2.990 77.1 0.038 5.5 0.471 -161.2
6.0 0.915 -171.5 1.961 63.2 0.035 1.4 0.520 -161.0
8.0 0.923 -175.8 1.431 51.7 0.032 -1.2 0.574 -161.2
10.0 0.933 -178.0 1.106 41.8 0.029 -2.4 0.627 -162.0
12.0 0.940 180.0 0.887 32.4 0.027 -3.0 0.677 -163.9
14.0 0.941 177.8 0.731 23.3 0.025 -5.5 0.721 -166.5
16.0 0.947 175.1 0.616 14.1 0.024 -8.8 0.756 -169.8
18.0 0.949 171.5 0.531 4.7 0.025 -11.9 0.791 -173.7
20.0 0.954 167.9 0.459 -4.5 0.024 -13.0 0.818 -177.9
22.0 0.967 167.2 0.389 -12.4 0.023 -12.5 0.848 175.9
24.0 0.970 165.3 0.335 -19.6 0.024 -11.2 0.873 172.2
26.0 0.971 163.3 0.292 -25.8 0.024 -0.7 0.900 170.7
60
55
50
45
40
35
30
25
20
Low Distortion GaAs Power FET
PAE (%)
Pout & PAE vs. Pin
f = 12 GHz
Vds = 8 V, Ids = 50% Idss
45
40
35
30
25
20
15
10
Pout (dBm) or PAE (%)
5
0
51015202530
Pin (dBm)
PAE
Pout
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