Datasheet EFA040A Datasheet (Excelics)

Excelics

EFA040A

DATA SHEET

Low Di stortion GaAs Power FET

• +23.0dBm TYPICAL OUTPUT POWER

• 10.5 dB T YPICAL POWER GAIN AT 12GHz

• 0.3 X 400 MICRON RECESSED “MUSH ROOM” GATE

• Si

• ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH PO W ER E FFICIENCY ,
LINEARITY AND RELIABILITY

• Idss SORTED IN 10mA PER BIN RANGE

ELECTRICAL CHARACTERISTICS (Ta = 25 OC)

SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT

P

G

PAE

Idss

PASSIVATION

3N4

1dB

1dB



Chip Thicknes s: 75 ± 13 microns
All Dimensions In Microns

Output Power at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
Gain at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
Gain at 1dB Compression
Vds=8V, Ids=50% Idss f=12GHz

Saturated Drain Current Vds=3V, Vgs=0V 60 105 160 mA

21.0 23.0

9.0 10.5





'

*

66





23.0

8.0

35







dBm

dB

%

Gm
Vp
BVgd
BVgs
Rth

Transconductance Vds=3V, Vgs=0V 45 60 mS
Pinch-off Voltage Vds=3V, Ids=1.0 mA -2.0 -3.5 V
Drain Breakdown Voltage Igd=1.0mA -12 -15 V
Source Breakdown Voltage Igs=1.0mA -7 -14 V
Thermal Resistance (Au-Sn Eutectic Attach) 105

MAXIMUM RATINGS AT 25OC

SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2

Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt

Note: 1. Exceeding any of th e above ratings may result in permanent damage.

2. E xceedin g any of the above ratin gs may reduce MTTF below design goals.

Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation

12V

-8V
Idss
10mA
22dBm
175oC

-65/175oC

1.3W

8V

-4V
135mA
2mA
@ 3dB Compression
150oC

-65/150oC

1.1W

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com

o

C/W

EFA040A

DATA SHEET

Low Distortion GaAs Power FET

S-PARAMETERS

8V, 1/2 Idss

FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --­(GHz) MAG ANG MAG ANG MAG ANG MAG ANG

1.0 0.989 -21.4 4.677 163.5 0.019 78.1 0.665 -7.4

2.0 0.970 -41.5 4.457 149.3 0.036 67.0 0.646 -15.3

3.0 0.942 -60.3 4.164 135.7 0.049 56.3 0.615 -22.4

4.0 0.915 -77.6 3.845 123.2 0.060 47.3 0.584 -29.1

5.0 0.888 -94.0 3.529 111.1 0.068 38.6 0.550 -36.2

6.0 0.870 -107.0 3.204 100.9 0.072 32.1 0.526 -42.3

7.0 0.856 -118.1 2.914 91.6 0.075 27.0 0.508 -48.4

8.0 0.846 -127.2 2.663 83.2 0.077 21.2 0.496 -54.3

9.0 0.840 -135.1 2.442 75.5 0.078 16.6 0.487 -60.1

10.0 0.834 -142.0 2.258 68.4 0.077 13.1 0.482 -65.4

11.0 0.833 -148.6 2.115 61.5 0.078 10.0 0.478 -70.9

12.0 0.829 -154.2 1.985 54.8 0.078 6.9 0.476 -76.3

13.0 0.828 -160.2 1.880 48.1 0.078 3.7 0.471 -81.7

14.0 0.826 -166.5 1.799 41.4 0.079 1.1 0.465 -86.7

15.0 0.823 -173.0 1.721 34.6 0.079 -1.5 0.457 -92.5

16.0 0.824 180.0 1.652 27.4 0.080 -4.8 0.446 -98.7

17.0 0.823 172.7 1.583 19.9 0.082 -7.8 0.434 -106.0

18.0 0.822 165.6 1.510 12.5 0.082 -10.9 0.422 -114.2

19.0 0.824 159.0 1.436 5.0 0.082 -13.6 0.412 -123.8

20.0 0.827 153.0 1.358 -2.3 0.083 -16.4 0.409 -134.1

21.0 0.845 151.3 1.218 -8.6 0.078 -18.8 0.445 -148.8

22.0 0.853 148.1 1.144 -14.9 0.076 -20.1 0.467 -158.9

23.0 0.859 145.0 1.073 -20.7 0.076 -19.7 0.496 -166.3

24.0 0.862 143.0 1.012 -26.4 0.073 -20.1 0.533 -173.2

25.0 0.870 141.1 0.965 -31.9 0.074 -18.3 0.565 -179.5

26.0 0.866 139.5 0.915 -36.9 0.074 -17.5 0.595 176.0

1 gate wires, 15 mils each; 1 drain wires, 20 mils each; 4 source wires, 7 mils each.

Note: The data included 0.7 mils diameter Au bonding wires: