Page 1
Excelics
EFA025AL
DATA SHEET
+20.0dBm TYPICAL OUTPUT POWER
•
11.5dB TYPICAL POWER GAIN AT 12GHz
•
0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
•
PASSIVATION
Si
•
3N4
ADVANCED EPITAXIAL DOPING PROFILE
•
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 5mA PER BIN RANGE
•
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT
P
1dB
G
1dB
PAE
Idss
Output Power at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
Gain at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
Power Added efficiency at 1dB Compression
Vds=8V, Ids=50% Idss f=12GHz
Saturated Drain Current Vds=3V, Vgs=0V 20 45 65 mA
High Gain GaAs Power FET
420
50
104
DD
S
40
17.0 20.0
9.5 11.5
G
59 78
50
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
20.0
9.0
38
S
G
dBm
dB
48
260
90
%
Gm
Vp
BVgd
BVgs
Rth
Transconductance Vds=3V, Vgs=0V 30 50 mS
Pinch-off Voltage Vds=3V, Ids=1.0mA -1.5 -2.5 V
Drain Breakdown Voltage Igd=1.0mA -12 -15 V
Source Breakdown Voltage Igs=1.0mA -7 -14 V
Thermal Resistance (Au-Sn Eutectic Attach) 155
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Drain-Source Vo ltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
12V
-8V
Idss
6mA
19dBm
175oC
-65/175oC
880mW
8V
-4V
Idss
1mA
@ 3dB Compression
150oC
-65/150oC
730mW
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
o
C/W
Page 2
EFA025AL
DATA SHEET
S-PARAMETERS
8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.990 -19.8 5.439 163.7 0.014 78.3 0.787 -7.4
2.0 0.970 -38.4 5.095 150.4 0.027 68.7 0.772 -14.1
3.0 0.927 -55.0 4.719 137.3 0.037 58.7 0.751 -20.6
4.0 0.895 -69.0 4.328 126.3 0.043 52.7 0.727 -26.3
5.0 0.862 -81.3 3.961 116.0 0.049 45.8 0.709 -32.1
6.0 0.838 -91.8 3.630 107.0 0.051 41.8 0.692 -37.1
7.0 0.815 -101.4 3.327 98.8 0.054 37.2 0.681 -42.0
8.0 0.802 -110.2 3.078 90.9 0.055 33.0 0.675 -46.6
9.0 0.779 -118.3 2.822 83.7 0.056 28.4 0.663 -51.0
10.0 0.769 -125.4 2.613 77.3 0.053 25.0 0.655 -54.8
11.0 0.765 -132.3 2.436 71.1 0.052 23.8 0.651 -58.5
12.0 0.764 -139.0 2.285 64.8 0.051 22.4 0.645 -62.0
13.0 0.769 -144.9 2.150 58.9 0.051 20.1 0.636 -65.3
14.0 0.771 -150.5 2.032 53.3 0.050 19.7 0.628 -69.1
15.0 0.779 -155.4 1.945 47.5 0.051 20.2 0.619 -73.7
16.0 0.781 -159.8 1.852 41.3 0.053 20.5 0.614 -79.6
17.0 0.786 -163.1 1.783 35.8 0.056 19.3 0.593 -86.9
18.0 0.793 -166.7 1.732 29.6 0.061 17.0 0.580 -95.4
19.0 0.794 -170.0 1.674 22.7 0.063 16.1 0.577 -105.2
20.0 0.786 -173.1 1.607 15.7 0.067 14.6 0.582 -116.6
21.0 0.773 -175.2 1.505 9.1 0.070 12.7 0.590 -128.3
22.0 0.762 -177.7 1.437 3.0 0.071 13.3 0.604 -138.3
23.0 0.763 -179.9 1.368 -2.4 0.076 16.5 0.637 -146.1
24.0 0.762 176.7 1.305 -8.5 0.083 16.6 0.678 -153.2
25.0 0.759 173.1 1.235 -14.3 0.088 16.8 0.703 -158.7
26.0 0.753 170.5 1.168 -18.0 0.092 17.9 0.721 -161.8
2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 4 source wires, 7 mils each.
Note: The data included 0.7 mils diameter Au bonding wires:
High Gain GaAs Power FET
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