Datasheet EFA025A Datasheet (Excelics)

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Page 1

Excelics

EFA025A

DATA SHEET

Low Di stortion GaAs Power FET

• +21.0dBm TYPICAL OUTPUT POWER

• 11.0dB T YPICAL POWER GAIN AT 12GHz

• TYPICAL 1.5 dB NOISE FIGURE AND 10 dB ASSOCIATED

GAIN AT 12GHz

• 0.3 X 250 MICRON RECESSED “MUSH ROOM” GATE

• Si

• ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH PO W ER E FFICIENCY , LINEARITY AND RELIABILITY

• Idss SORTED IN 5mA PER BIN RANG E

PASSIVATION

3N4



Chip Thickness: 75 ± 13 microns All Dimensions In Microns

ELECTRICAL CHARACTERISTICS (Ta = 25 OC)

SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT

PAE

NF GA

Idss

Vp BVgd BVgs

Rth

Output Power at 1dB Compression f=12GHz 21

1dB

Vds=8V, Ids=50% Idss f=18GHz Gain at 1dB Compression f=12GHz 11

1dB

Vds=8V, Ids=50% Idss f=18GHz Power Added e fficiency at 1dB Compression Vds=8V, Ids=50% Idss f=12GHz Noise Figure Vds=3V,Ids=15mA f=12GHz 1.5 dB Associated Gain Vds=3V,Ids=15mA f=12GHz 10 dB Saturat ed Drai n Curre nt Vds=3V, Vgs=0V 35 65 105 mA Transconductance Vds=3V, Vgs=0V 30 40 mS Pinch-off Voltage Vds=3V, Ids=1.0mA -2 -3.5 V Drain Breakdown Voltage Igd=1.0mA -12 -15 V Source Breakdown Voltage Igs=1.0mA -7 -14 V Thermal Resistance ( Au-Sn Eutectic Attac h) 155

MAXIMUM RATINGS AT 25OC

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



 



dBm

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



C/W

SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2

Vds Vgs Ids Igsf Pin Tch Tstg Pt

Note: 1. Exceeding any of th e above ratings may result in permanent damage.

2. E xceedin g any of the above ratin gs may reduce MTTF below design goals.

Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation

12V

-8V Idss 6mA 19dBm 175oC

-65/175oC 880mW

-4V 90mA 1mA @ 3dB Compression 150oC

-65/150oC 730mW

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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EFA025A

P-1dB & PAE vs. Vds

f = 12 GHz Ids =50% Idss

P-1dB (dBm)

45678910

Drain-Source Voltage (V)

DATA SHEET

60 55 50 45 40

PAE (%)

35 30 25 20

Low Distortion GaAs Power FET

f = 12 GHz Vds = 8 V, Ids = 50% Idss

45 40 35 30 25 20 15 10

Pout (dBm) or PAE (%)

5 0

-15 -10 -5 0 5 10 15 20

Pout & PAE vs. Pin

PAE

Pout

Pin (dBm)

S-PARAMETERS

3V, 15mA 8V,Idss

FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --(GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG

1.0 0.995 -13.5 3.600 168.7 0.023 81.5 0.606 -8.1

2.0 0.976 -26.7 3.527 158.2 0.044 72.7 0.595 -15.9

3.0 0.957 -39.7 3.434 148.1 0.064 64.8 0.569 -24.3

4.0 0.931 -53.0 3.313 137.7 0.081 57.1 0.544 -33.3

5.0 0.906 -63.9 3.119 128.8 0.094 50.5 0.536 -41.2

6.0 0.875 -74.0 2.938 120.2 0.106 44.0 0.512 -48.3

7.0 0.846 -84.0 2.796 111.9 0.116 38.1 0.496 -57.0

8.0 0.818 -93.6 2.625 103.9 0.124 32.4 0.484 -64.2

9.0 0.797 -102.4 2.468 96.8 0.129 27.4 0.475 -69.6

10.0 0.781 -110.6 2.330 90.0 0.133 22.2 0.456 -75.0

11.0 0.762 -119.0 2.206 83.1 0.137 17.6 0.448 -81.0

12.0 0.752 -127.5 2.075 76.5 0.139 13.3 0.429 -86.0

13.0 0.749 -134.0 1.940 70.6 0.138 9.3 0.432 -92.2

14.0 0.747 -138.4 1.825 65.8 0.137 6.7 0.444 -93.6

15.0 0.745 -142.8 1.763 61.5 0.140 4.3 0.432 -93.1

16.0 0.738 -150.1 1.728 55.4 0.145 0.7 0.399 -99.1

17.0 0.729 -157.5 1.648 49.0 0.147 -3.4 0.400 -107.7

18.0 0.727 -163.1 1.574 43.9 0.147 -6.1 0.397 -110.9

19.0 0.729 -167.9 1.532 38.6 0.150 -8.7 0.376 -117.7

20.0 0.718 -173.0 1.482 32.5 0.152 -12.3 0.386 -129.5

21.0 0.709 -175.0 1.429 28.1 0.153 -14.5 0.393 -134.4

22.0 0.709 178.6 1.365 22.5 0.153 -17.5 0.386 -142.4

23.0 0.706 173.1 1.295 16.6 0.150 -20.2 0.403 -150.8

24.0 0.714 166.8 1.211 11.0 0.145 -23.3 0.434 -158.6

25.0 0.735 162.8 1.147 6.6 0.141 -24.7 0.455 -160.4

26.0 0.738 161.3 1.056 2.9 0.132 -26.2 0.490 -165.6

Note: The data included 0.7 mils diameter Au bonding wires: 2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 4 source wires, 7 mils each.

S-PARAMETERS

1.0 0.96 -14.6 4.413 167.5 0.017 52.8 0.699 -5.5

2.0 0.954 -29.2 4.255 156.5 0.031 58.8 0.698 -12.1

3.0 0.923 -42.9 4.083 145.2 0.044 56.1 0.684 -18.9

4.0 0.898 -55.1 3.865 135.2 0.054 51.5 0.665 -25.3

5.0 0.871 -66.3 3.651 125.5 0.063 46.3 0.644 -31.6

6.0 0.848 -76.4 3.422 116.7 0.069 42.2 0.625 -37.4

7.0 0.824 -85.7 3.203 108.7 0.074 37.8 0.608 -43.0

8.0 0.811 -94.4 3.021 100.7 0.078 32.7 0.595 -48.7

9.0 0.785 -102.5 2.81 93.5 0.08 27.9 0.577 -54.0

10.0 0.77 -109.7 2.639 87.0 0.079 23.8 0.564 -58.7

11.0 0.762 -116.6 2.49 80.6 0.08 20.3 0.553 -63.4

12.0 0.756 -123.4 2.358 74.1 0.079 17.6 0.541 -67.9

13.0 0.757 -129.6 2.239 68.2 0.081 13.9 0.531 -72.3

14.0 0.756 -135.5 2.136 62.2 0.08 11.7 0.517 -76.9

15.0 0.761 -140.7 2.051 56.3 0.079 8.7 0.506 -82.2

16.0 0.762 -146.0 1.965 50.0 0.082 7.9 0.496 -88.9

17.0 0.763 -150.2 1.891 44.2 0.084 5.2 0.477 -96.8

18.0 0.766 -154.6 1.837 38.0 0.087 3.9 0.465 -106.0

19.0 0.762 -158.5 1.775 31.4 0.089 1.7 0.462 -115.8

20.0 0.751 -162.4 1.7 24.6 0.092 -0.7 0.465 -127.1

21.0 0.73 -165.4 1.594 18.2 0.093 -3.3 0.473 -138.2

22.0 0.71 -167.8 1.52 12.8 0.093 -3.1 0.489 -148.5

23.0 0.707 -169.4 1.457 7.9 0.093 -0.8 0.519 -156.4

24.0 0.71 -171.7 1.41 2.5 0.097 -0.2 0.555 -163.8

25.0 0.72 -175.6 1.351 -3.6 0.101 2.4 0.578 -170.1

26.0 0.712 -178.1 1.29 -7.2 0.103 3.8 0.603 -173.3

Page 3

EFA025A

DATA SHEET

Low Distortion GaAs Power FET

EFA025A Noise Parameters Vds=3V, Ids=15mA

Freq. Popt Nfmin

(GHz) (MAG) (ANG) (dB) Rn/50

2 0.71 17 0.53 0.58 4 0.67 35 0.65 0.52 6 0.81 48 0.85 0.49

8 0.71 63 1.05 0.44 10 0.65 79 1.35 0.38 12 0.70 95 1.55 0.34 14 0.65 105 1.90 0.29 16 0.61 120 2.25 0.25 18 0.70 135 2.60 0.17 20 0.65 145 2.90 0.15 22 0.64 153 3.20 0.12 24 0.69 164 3.50 0.08 26 0.70 175 3.80 0.05