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NTE300 (NPN) & NTE307 (PNP)
Silicon Complementary Transistors
Audio Power Amplifier
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector-Base Voltage, V
Collector-Emitter Voltage, V
Emitter-Base Voltage, V
Collector Current, I
C
Collector Power Dissipation (TC = +25°C), P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
CBO
CEO
EBO
C
J
stg
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector-Base Breakdown Voltage V
Collector-Emitter Breakdown Voltage V
Emitter-Base Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Collector-Emitter Saturation Voltage V
Base-Emitter Voltage V
(BR)CBOIC
(BR)EBOIC
(BR)EBOIE
CE(sat)IC
CBO
EBO
FE
BE
= 1mA, IE = 0 50 - - V
= 10mA, RBE = ∞ 40 - - V
= 1mA, IC = 0 5 - - V
VCB = 25V, IE = 0 - - 1 µA
VEB = 5V, IC = 0 - - 1 µA
VCE = 4V, IC = 500mA 55 - 300
= 1A, IB = 50mA - - 1 V
VCE = 4V, IC = 50mA - 0.7 - V
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.180 (4.57).380 (9.56)
1.200
(30.48)
Ref
.500
(12.7)
.300
(7.62)
.400
(10.16)
Min
C
CBE
.132 (3.35) Dia
.325
(9.52)
.070 (1.78) x 45°
Chamf
.050 (1.27)
.100 (2.54) .100 (2.54)
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