Datasheet ECG273, NTE272, NTE273 Specification

NTE272 (NPN) & NTE273 (PNP)

Silicon Darlington Complementary

Power Amplifiers

Description:

The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type
case designed for use in complementary amplifiers and driver applications.

Features:

D High DC Current Gain:

hFE= 25,000 (Min) @ IC = 200mA

= 15,000 (Min) @ IC = 500mA

D Collector−Emitter Breakdown Voltage:

V

(BR)CES

D Low Collector−Emitter Saturation Voltage:

V

CE(sat)

D Monolithic Construction for High Reliability

Absolute Maximum Ratings:

Collector−Emitter Voltage (Note 2), V
Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V
Collector Current, I
Total Power Dissipation (TA = +25°C), P

Derate above 25°C 8mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (TC = +25°C), P

Derate above 25°C 80mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Ambient, R
Thermal Resistance, Junction−to−Case, R

= 40V @ IC = 500mA

= 1.5V @ IC = 1A

CES

CB

EB

C

−55 to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

stg

CEO

40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

D

D

J

thJA

thJC

−55 to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

125°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

12.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. NTE273 is a discontinued device and no longer available.
Note 2. Due to the monolithic construction of this device, breakdown voltages of both transistor ele-

ments are identical. V

(BR)CES

by noise pickup. The voltage measured during the V

is tested in lieu of V

(BR)CEO

(BR)CES

in order to avoid errors caused
test is the V

(BR)CEO

of the output

transistor.

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector−Emitter Breakdown Voltage V

Collector−Base Breakdown Voltage V

Emitter−Base Breakdown Voltage V

Collector Cutoff Current I

Emitter Cutoff Current I

(BR)CESIC

(BR)CBOIC

(BR)EBOIE

CBO

EBO

= 100µA, VBE = 0 40 − − V

= 100µA, IE = 0 50 − − V

= 10µA, IC = 0 12 − − V

VCB = 30V, IE = 0 − − 100 nA

VEB = 10V, IC = 0 − − 100 nA

ON Characteristics (Note 3)

DC Current Gain |hfe| IC = 200mA, VCE = 5V 25,000 65,000 150,000

IC = 500mA, VCE = 5V 15,000 35,000 −

IC = 1A, VCE = 5V 4,000 12,000 −

Collector−Emitter Saturation Voltage V

Base−Emitter Saturation Voltage V

Base−Emitter ON Voltage V

CE(sat)IC

BE(sat)IC

BE(ON)IC

= 1A, IB = 2mA − 1.2 1.5 V

= 1A, IB = 2mA − 1.85 2.0 V

= 1A, VCE = 5V − 1.7 2.0 V

Dynamic Characteristics

Small−Signal Current Gain h

FE

IC = 200mA, VCE = 5V,

1.0 3.2 −

f = 100MHz, Note 2

Collector−Base Capacitance C

VCB = 10V, IE = 0, f = 1MHz − 2.5 6.0 pF

cb

Note 3. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%.

NTE272 Schematic

C

B

E

NTE273 Schematic

C

B

E

Uniwatt darlington transistors can be used in any
number of low power applications, such as relay
drivers, motor control and as general purpose
amplifiers. As an audio amplifier these devices,
when used as a complementary pair, can drive

3.5 watts into a 3.2ohm speaker using a 14 volt
supply with less than one per cent distortion. Be­cause of the high gain the base drive requirement
is as low as 1mA in this application. They are also
useful as power drivers for high current applica­tion such as voltage regulators.

.218

(5.55)

.160

(4.06)

.218

(5.55)

.475

(12.0)

Min

.100 (2.54)

EBC

Collector Connected to Tab

TO202N

.380 (9.65) Max

.050 (1.27)

.280 (7.25) Max

.128 (3.28) Dia

.995

(25.3)

.200 (5.08)