Page 1
NTE268 (NPN) & NTE269 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202
type package designed for amplifier and driver applications where high gain is an essential require‐
ment, low power lamp and relay drivers and power drivers for high-current applications such as volt‐
age regulators.
Features:
D Low Collector-Emitter Saturation Voltage: V
CE(sat)
D TO202 Type Package: 2W Free Air Dissipation @ TA = +25°C
Absolute Maximum Ratings:
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
Emitter-Base Voltage, V
Colllector Current, I
C
CEO
CES
EBO
Continuous 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Base Current, I
Total Power Dissipation (TA = +25°C), P
B
D
Derate Above 25°C (Note 2) 13.3mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), P
D
Derate Above 25°C 80mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction-to-Ambient, R
Thermal Resistance, Junction-to-Case, R
J
thJA
thJC
= 1.5V Max @ IC = 1.5A
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.67W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
75°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Width ≤ 25ms, Duty Cycle ≤ 50%.
Note 2. The actual power dissipation capability of the TO202 type package is 2W @ TA = +25°C.
Page 2
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector-Emitter Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
(BR)CEOIC
CBO
I
CES
EBO
= 10mA, Note 3 50 - - V
VCB = 50V, IE = 0, TJ = +150°C - - 20 μA
VCE = 50V, VBE = 0 - - 0.5 μA
VEB = 13V, IC = 0 - - 100 nA
ON Characteristics (Note 4)
DC Current Gain h
FE
IC = 200mA, VCE = 5V 10000 - -
IC = 1.5A, VCE = 5V 1000 - -
Collector-Emitter Saturation Voltage V
Base-Emitter Saturation Voltage V
CE(sat)IC
BE(sat)IC
= 1.5A, IB = 3mA - - 1.5 V
= 1.5A, IB = 3mA - - 2.5 V
Dynamic Characteristics
Collector Capacitance
NTE268
C
cb
VCB = 10V, IE = 0, f = 1MHz - - 10 pF
NTE269 - - 25 pF
High Frequency Current Gain |hfe| IC = 20mA, VCE = 5V, f = 100MHz 1.0 - -
Note 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
NTE268
C
B
C
E
1.200
(30.48)
.500
(12.7)
(9.52)
Ref
.300
(7.62)
NTE269
C
B
.400
(10.16)
Min
EBC
.100 (2.54) .100 (2.54)
.180 (4.57).380 (9.56)
.132 (3.35) Dia
.325
.070 (1.78) x 45°
Chamf
.050 (1.27)
E
Loading...