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NTE267
Silicon NPN Transistor
High Gain Darlington Power Amp, Switch
Features:
D Forward Current Transfer Ratio: hFE = 90,000 min.
D Free−Air Power Dissipation: 1.33W @ T
D Hard Solder Mountdown
Applications:
D Driver
D Regulator
D Audio Output
D Relay Substitute
D Touch Switch
= +50°C
A
D Oscillator
D IC Driver
D Servo Amplifier
D Capacitor Multiplier
Absolute Maximum Ratings
Collector to Emitter, V
Emitter to Base, V
Collector to Emitter, V
Collector Current, I
CEO
EBO
CES
C
: (TA = +25°C, unless otherwise specified)
Continuous 500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
T
Tab at +25°C 6.25W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
w
Free Air at +50°C
Thermal Resistance, Junction to Case (Note 1), R
Thermal Resistance, Junction to Ambient (Note 1), R
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec max), T
/Tab 1.33W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
thJA
J
stg
L
Note 1. Tab temperature is measured on center of tab, 1/16” from plastic body.
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
75°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .
−55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+260°C. . . . . . . . . .
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Electrical Characteristics: (TA = +25°C, unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Forward Current Transfer Ratio h
VCE = 5V, f = 1kHz IC = 200mA 90k − −
FE
IC = 20mA 90k − −
Collector Emitter Saturation Voltage V
Base Emitter Saturation Voltage V
CE(sat)IC
BE(sat)IC
Collector Cutoff Current I
I
Emitter Cutoff Current I
Collector Capacitance C
Gain Bandwidth Product f
CES
CBO
EBO
cbo
T
= 500mA, IB = 0.5mA, Note 2 − − 1.5 V
= 500mA, IB = 0.5mA − − 2.0 V
VCE = Rated V
VCE = Rated V
, TJ = +25°C − − 0.5 μA
CES
, TJ = +150°C − − 20 μA
CES
VEB = 13V − − 0.1 μA
VCB = 10V, f = 1MHz − 5 10 pF
VCE = 5V, IC = 20mA − 75 − MHz
Switching Times
Delay Time and Rise Time td & trIC = 1A, IB1 = 1mA − 100 − ns
Storage Time t
Fall Time t
IC = 1A, IB1 = IB2 = 1mA − 350 − ns
s
IC = 1A, IB1 = IB2 = 1mA − 800 − ns
f
Note 2. Pulsed measurement, 300μsec pulse width, duty cycle ≤ 2%.
.180 (4.57).380 (9.56)
C
.500
(12.7)
1.200
C
(30.48)
Ref
B
.300
(7.62)
.132 (3.35) Dia
.325
(9.52)
.070 (1.78) x 45°
Chamf
.050 (1.27)
E
.400
(10.16)
Min
.100 (2.54) .100 (2.54)
EBC
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