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NTE239
Silicon Controlled Switch (SCS)
Description:
The NTE239 is a silicon controlled switch in a TO72 type package designed for use as a driver for
a numerical indicator tube and switching applications.
Features:
D Selective Breakover Voltage
D Low ON Voltage
Absolute Maximum Ratings:
Collector-Base Voltage (Open Emitter), V
(TA = +25°C unless otherwise specified)
CBO
NPN 70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PNP -70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector-Emitter Voltage (NPN Only, R
= 10kΩ), V
BE
Collector-Emitter Voltage (PNP Only, Open Base), V
Emitter-Base Voltage (Open Collector), V
EBO
NPN 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PNP -70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Collector Current (NPN Only), I
C
Continuous (Note 1) 175mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 2) 175mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Current, I
E
NPN -175mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PNP 175mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Emitter Current (t
≤ 10μs, δ = 0.01), I
p
EM
NPN -2.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PNP 2.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
Operating Junction Temperature, T
Ambient Operating Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction-to-Ambient, R
≤ +25°C), P
A
J
stg
D
A
thJA
CER
CEO
70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
275mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
450K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Provided the IE rating is not exceeded.
Note 2. During switching on, the device can withstand the discharge of a capacitor o a maximum
value of 500pF. This capacitor is charged when the transistor is in cut-off condition, with a
collector supply voltage of 160V an a serise resistance of 100kΩ.
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Inividual NPN Transistor
Collector Cutoff Current I
Emitter Cutoff Current I
(TA = +25°C unless otherwise specified)
CER
EBO
VCE = 70V, RBE = 10kΩ - - 100 nA
VCE = 70V, RBE = 10kΩ, TJ = +150°C - - 10 μA
VEB = 5V, IC = 0, TJ = +150°C - - 10 μA
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Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Inividual NPN Transistor (Cont'd)
Collector-Emitter Saturation Voltage V
Base-Emitter Saturation Voltage V
CE(sat)IC
BE(sat)IC
DC Current Gain h
Transition Frequency f
Collector Capacitance C
Emitter Capacitance C
Individual PNP Transistor
Collector Cutoff Current I
CEO
Emitter Cutoff Current -I
DC Current Gain h
Combined Device
Forward On-State Voltage V
Holding Current I
Switching Times
Turn-On Time t
Turn-Off Time t
FE
T
c
e
EBO
FE
AK
H
on
off
= 10mA, IB = 1mA - - 500 mV
= 10mA, IB = 1mA - - 900 mV
VCE = 2V, IC = 10mA 50 - -
VCE = 2V, IC = 10mA, f = 100MHz 100 - - MHz
VCB = 20V, IE = Ie = 0 - - 5 pF
VEB = 1V, IC = Ic = 0 - - 25 pF
-VCE = 70V, IB = 0, TJ = +150°C - - -10 μA
-VEB = 70V, IC = 0, TJ = +150°C - - -10 μA
-VCB = 5V, IE = 1mA 3 - 15
IA = 50mA, IAG = 0, R
IA = 50mA, IAG = 0, R
= -55°C
T
J
IA = 1mA, IAG = 10mA, R
VBB = -2V, IAG = 0, R
V
= -0.5 to 4.5V, R
KG-K
V
= -0.5 to 0.5V, R
KG-K
R
= 10kΩ - - 15 μs
KG-K
= 10kΩ - - 1.4 V
KG-K
= 10kΩ,
KG-K
= 10kΩ - - 1.2 V
KG-K
= 10kΩ - - 1.0 mA
KG-K
= 1kΩ - - 0.25 μs
KG-K
= 10kΩ - - 1.5 μs
KG-K
- - 1.9 V
.190
(4.82)
.500
(12.7)
Min
.018 (0.45) Dia
1
45°
.040 (1.02)
.220 (5.58) Dia
.185 (4.7) Dia
.030 (.762)
2
3
4
4
Emitter (PNP)
3
Base (PNP)/
Collector (NPN)
2
Collector (PNP)/
Base (NPN)
Emitter (NPN)
1
Transistor Basing
4
Anode
3
Anode/Gate
2
Cathode/Gate
Cathode
1
Thyristor Basing
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