Datasheet EC10DS1 Datasheet (NIHON)

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DIODE Type : EC10DS1

FEATURES

FEATURES

FEATURESFEATURES
* Miniature Size,Surface Mount Device
* High Surge Capability
* Low Forward Voltage Drop
* Low Reverse Leakage Current
* Packaged in 12mm Tape and Reel
* Not Rolling During Assembly

EC10DS1

EC10DS1EC10DS1

OUTLINE DRAWING

Maximum Ratings Approx Net Weight:0.06g

Rating Symbol EC10DS1 Unit

Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Voltage

Average Rectified Output Current IO
RMS Forward Current
Surge Forward Current I

V

RRM

V

250

RSM

0.74

I

1.57

F(RMS)

25

FSM

Ta=25 °C *1

1.0

Ta=25 °C *2

50Hz Half Sine Wave,1cycle
Non-repetitive

100

Operating JunctionTemperature Range Tjw -40 to +150
Storage Temperature Range T

-40 to +150

stg

Electrical • Thermal Characteristics

Characteristics Symbol Conditions Min. Typ. Max. Unit

Peak Reverse Current
Peak Forward Voltage

Thermal Resistance Rth

*1 Glass Epoxy Substrate Mounted (Soldering Lands=2x2mm,Both Sides)
*2 Alumina Substrate Mounted (Soldering Lands=2x2mm,Both Sides)

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I

V

Tj= 25°C, V

RM

Tj= 25°C, I

FM

Junction to Ambient

(j-a)

= V

RM

= 1.0A

FM

RRM

*1 - - 157
*2 - - 108

V
V

50Hz Half Sine
Wave Resistive Load

A
A

A

°C
°C

- - 10

µA

- - 1.1 V
/W

°C

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EC10DS1 OUTLINE DRAWING (Dimensions in mm)

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