
Transistors ! DTC143XEB
!!!!!!!!!!!!!!
100mA / 50V Digital transistors
(with built-in resistors)
DTC143XEB
Applications
Inverter, Interface, Driver
Dimensions (Unit : mm)
EMT3F
z
Features
1)Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
2)The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.
3)Only the on/off conditions need to be set for
operation, making the device design easy.
Structure
NPN silicon epitaxial planar transistor type
(Resistor built-in)
Packaging specifications
z
EMT3F
TL
3000
Part No.
DTC143XEB
Package
Packaging type Taping
Code
Basic ordering unit (pieces)
1.6
(1) IN
(2) GND
(3) OUT
Equivalent circuit
R
IN
1
R
2
IN
R1=4.7kΩ, R2=10kΩ
1.6
0.26
(3)
0.37
0.86
(1) (2)
0.37
0.5 0.5
1.0
Abbreviated symbol : 43
OUT
GND
OUT
GND
0.7
0.45
0.13
Each lead has same dimensions
0.45
z
Absolute maximum ratings (T a=25qC)
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of Storage temperature
∗1 Characteristics of built-in transistor
∗2 Each terminal mounted on a recommended land
V
V
Io
P
Tj
Tstg
LimitsParameter Symbol
CC
IN
∗1
∗2
D
50
−7 to +20
100 mAIc(max)
100
150
150
−55 to +150
Unit
V
V
mA
mW
°C
°C
1/2

Transistors ! DTC143XEB
!!!!!!!!!!!!!!
Electrical characteristics (Ta=25qC)
Parameter Symbol
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
∗ Characteristics of built-in transistor
z
Electrical characteristic curves
100
50
20
(V)
I(on)
10
=−40°C
5
2
1
500m
INPUT VOLTAGE : V
200m
100m
100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m
Ta
25°C
100°C
OUTPUT CURRENT : I
O
(A)
Fig.1 Input voltage vs. output current
(ON characteristics)
1
500m
(V)
200m
O(on)
100m
50m
20m
10m
5m
OUTPUT VOLTAGE : V
2m
1m
100μ 200μ 500μ 1m 2m 5m 10m 20m 50m100m
Ta=100°C
25°C
−40°
C
OUTPUT CURRENT : I
O
(A)
Fig.4 Output voltage vs. output
current
V
I(off)
V
I(on)
V
O(on)
I
O(off)
G
f
R
R2/R
V
lO/lI=20
I
I
I
T
1
O
=0.3V
Min.
Typ. Max. Unit Conditions
300
−
−
−
2.5
100
−
−
−
−
−
−
30
250
−
4.7
3.29
2.1
1.7
1
10m
5m
2m
(A)
1m
500μ
200μ
100μ
50μ
20μ
10μ
OUTPUT CURRENT : Io
5μ
2μ
1μ
03.0
mV
−
300
mV
1.8
mA
500
nA
−
−
MHz
6.11
kΩ
2.6
0.5 1.0 1.5 2.0 2.5
INPUT VOLTAGE : V
Fig.2 Output current vs. input voltage
(OFF characteristics)
V
CC
=5V, IO=100μA
V
O
=0.3V, IO=20mA
V
I
O/II
=10mA/0.5mA
V
I
=5V
V
CC
=50V, VI=0V
O
=5V, IO=10mA
V
−
CE
=10V, IE=−5mA, f=100MHz∗
V
−
−−
1k
500
I
200
100
50
20
10
5
DC CURRENT GAIN : G
2
1
100μ 200μ 500μ 1m 2m 5m 10m 20m 50m100m
OUTPUT CURRENT : I
Ta=100°C
25°C
−40°C
VCC=5V
I(off)
(V)
Fig.3 DC current gain vs. output
current
Ta=100°C
25°C
−40°C
VO=5V
O
(A)
2/2

Appendix
Notes
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use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
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Appendix1-Rev2.0