Datasheet DS9503X, DS9503P-T-R, DS9503P Datasheet (Dallas Semiconductor)

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SPECIAL FEATURES

§ Zener characteristic with voltage snap–back

to protect against ESD hits

§ High avalanche voltage, low leakage and low

capacitance avoid signal attenuation

§ Compatible to all 5V logic families

§ Space saving, low inductance TSOC surface

mount package

§ On–chip 5Ω resistors for isolation at both

anode and cathode terminals

§ Industrial temperature range

SYMBOL AND CONVENTIONS

PACKAGE OUTLINE

ORDERING INFORMATION

DS9503P 6-lead TSOC package

DESCRIPTION

This DS9503 is designed as an ESD protection device for 1–Wire MicroLAN interfaces. In contrast to the
DS9502, the DS9503 includes two 5Ω isolation resistors on chip. Although 5Ω are negligible during
communication, they represent a high impedance relative to the conducting diode during an ESD event.
Thus, the diode absorbs the energy while the resistors further isolate and protect the circuit at the other
side of the package. If used with circuits that already have a strong ESD–protection at their I/O port, the
ESD protection level is raised to more that 27 kV (IEC 801–2 Reference model). In case of abnormal
ESD hits beyond its maximum ratings the DS9503 will eventually fail “short” thus preventing further
damage.

During normal operation the DS9503 behaves like a regular 7.5V Zener Diode. When the voltage
exceeds the trigger voltage, the I/V characteristic of the device will “snapback” allowing the same or
higher amount of current to flow, but at a significantly lower voltage. As long as a minimum current or
voltage is maintained, the device will stay in the “snapback mode”. If the voltage or the current falls
below the holding voltage or holding current, the device will abruptly change to its normal mode and
conduct only a small leakage current.

VCA

A

IC

C

TSOC SURFACE MOUNT PACKAGE

3.7 X 4.0 X 1.5 mm

See Mech. Drawings

Section

61

52

43

TOP VIEW

DS9503

ESD Protection Diode with Resistors

www.dalsemi.com

SIDE VIEW

DS9503

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DC CHARACTERISTICS Figure 1

DC CHARACTERISTICS DETAIL DRAWING Figure 2

TEST PULSE WAVEFORM Figure 3

TYPICAL APPLICATION Figure 4

DS9503

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PHYSICAL SPECIFICATIONS

Size See mechanical drawing
Weight 0.5 grams

ABSOLUTE MAXIMUM RATINGS*

Operating Temperature –40°C to +85°C
Storage Temperature –55°C to +125°C
Soldering Temperature 260°C for 10 seconds
Continuous DC Current Through Package 80 mA

∗ This is a stress rating only and functional operation of the device at these or any other conditions

above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability

ELECTRICAL CHARACTERISTICS (-40°C to +85°C)

PARAMETER SYMBOL MIN TYP MAX UNITS NOTES

Leakage Current I

L

30 100 nA 2

Avalanche Voltage V

AV

7.4 7.8 V 1,3

Trigger Voltage V

TRIGGER

9.0 9.5 V 1

Trigger Current I

TRIGGER

600 1000 mA

Holding Voltage V

HOLD

5.5 V 1

Holding Current I

HOLD

30 mA

Forward Voltage (-10 mA) V

F

-0.7 -0.8 V 4

Forward Current (-0.7V) I

F

-10 -100 mA 4

Maximum Peak Current I

PP

2.0 A 5

Continuous Current Through Diode I

CC

±80

mA

Isolation Resistance R

I

5

Ω

CAPACITANCE (tA=25°C)

PARAMETER SYMBOL MIN TYP MAX UNITS NOTES

Junction Capacitance (5V) C

J5

40 pF 1

Junction Capacitance (0V) C

J0

70 pF 1

THERMAL RESISTANCE

PARAMETER SYMBOL MIN TYP MAX UNITS NOTES

Junction To Package

R

ΘJC

75 K/W

Junction To Ambient

R

ΘJA

200 K/W

NOTES:

1. All voltages are referenced from Cathode to Anode.

2. At 7.0V.

3. At 0.3 µA.

4. Typical values at room temperature.

5. See pulse specification.