Page 1
Schottky
V
V
V
A
V
j
Ω
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
DSA 20 C 150PN
advanced
=
I
RRM
FAV
F
=
=
2x
150
10
0.74
Part number
(Marking on product)
DSA 20 C 150PN
Features / Advantages:
● Very low Vf
● Extremely low switching losses
● Low Irm-values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Low losses
Symbol Definition
V
RRM
I
R
V
F
I
FAV
V
F0
r
F
R
thJC
T
VJ
P
tot
I
FSM
C
J
E
AS
I
AR
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
threshold voltage
slope resistance
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
unction capacitance
non-repetitive avalanche energy
repetitive av a l an che current
123
Applications:
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
Conditions
150
V
=
R
=
V
R
=A
10
I
F
=A20
I
F
=A10
I
F
=A20
I
F
rectangular, d = 0.5
for power loss calculation only
ms (50 Hz), sine
=10
t
p
VR= V; f = 1 MHz
I
=A;L = µH
AS
1.5·V
=
V
A
V
V150
R
typ.;
100
f = 10 kHz
=
T
VJ
T
VJ
T
VJ
=
T
VJ
T
=
VJ
T
=140°C
C
= 175 °C
T
VJ
T
C
T
=45°C
VJ
=
T
VJ
=
T
VJ
25
25
125
25
125
25
25
25
Package:
TO-220FPAB
● Industry standard outline
● Plastic overmolded tab for
electrical isolation
● Epoxy meets UL 94V-0
● RoHS compliant
R a t i n g s
min.
typ. max.
°C
°C=
°C=
°C
°C
-55
°C=
°C
°C
Unit
0.3
mA
mA
3
0.88
0.99
0.74
10
0.55
11.5
m
4.50 K/W
175
°C
35 W
60
pF
tbd mJ
tbd
V150
V
V
V
V0.86
A
V
A
A
IXYS reserves the right to change limits, conditions and dimensi
© 2005 IXYS all rights reserved
0614
Data according to IEC 60747and per diode unless otherwise specified
Page 2
DSA 20 C 150PN
advanced
Ratings
Symbol Definition
I
R
M
F
T
RMS
thCH
D
C
stg
RMS current
thermal resistance case to heatsink
mounting torque
mounting force with clip
storage temperature
Weight
* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Conditions
per pin*
0.4
20
-55
typ. max.min.
35
0.50
60
150
2
Unit
A
K/W
Nm0.6
N
°C
g
Outlines
Q
L1
TO-220FPAB
b1
ØP
E
A
A1
H
D
A2
L
b
c
e
IXYS reserves the right to change limits, conditions and dimensi
© 2005 IXYS all rights reserved
0614
Data according to IEC 60747and per diode unless otherwise specified
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