Datasheet DIM800NSM33-A000 Datasheet (DYNEX)

DIM800NSM33-A000

DIM800NSM33-A000

Single Switch IGBT Module

Preliminary Information

Replaces August 2001, version DS5486-1.4 DS5486-2.0 October 2001

FEATURES

■ 10µs Short Circuit Withstand

■ High Thermal Cycling Capability

■ Non Punch Through Silicon

■ Isolated MMC Base with AlN Substrates

APPLICATIONS

■ High Reliability Inverters

■ Motor Controllers

■ Traction Drives

■ Choppers

The Powerline range of high power modules includes half
bridge, chopper, dual and single switch configurations covering
voltages from 600V to 3300V and currents up to 2400A.

The DIM800NSM33-A000 is a single switch 3300V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
This device is optimised for traction drives and other applications
requiring high thermal cycling capability.

The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.

KEY PARAMETERS
V

CES

V
I

C

I

C(PK)

CE(sat)

(typ) 3.2V
(max) 800A
(max) 1600A

Aux C

G
Aux E

Fig. 1 Single switch circuit diagram

1

C

2

E

3300V

External connection

E1 E2

External connection

E1

C1

C2C1

G

ORDERING INFORMATION

E2

C2

Order As:

DIM800NSM33-A000

Note: When ordering, please use the whole part number.

2

E

- Aux Emitter

1

C

- Aux Collector

Outline type code: N

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10

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DIM800NSM33-A000

ABSOLUTE MAXIMUM RATINGS

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

= 25˚C unless stated otherwise

T

case

Symbol

V

CES

V

GES

I

C

I

C(PK)

P

max

I2t

V

isol

Q

PD

Parameter

Collector-emitter voltage

Gate-emitter voltage

Continuous collector current

Peak collector current

Max. transistor power dissipation

2

Diode I

t value (Diode arm)

Isolation voltage - per module

Partial discharge - per module

Test Conditions

VGE = 0V

-

= 80˚C

T

case

1ms, T

T

case

V

R

= 115˚C

case

= 25˚C, Tj = 150˚C

= 0, tp = 10ms, Tvj = 125˚C

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

IEC1287. V

= 2450V, V2 = 1800V, 50Hz RMS

1

Max.

3300

±20

800

1600

9.6

320

6000

10

Units

V

V

A

A

kW

2

kA

V

pC

s

2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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THERMAL AND MECHANICAL RATINGS

Internal insulation material: AlN
Baseplate material: AlSiC
Creepage distance: 33mm
Clearance: 20mm
CTI (Critical Tracking Index): 175

DIM800NSM33-A000

Symbol

R

th(j-c)

R

th(j-c)

R

th(c-h)

T

j

T

stg

-

Parameter

Thermal resistance - transistor (per switch)

Thermal resistance - diode (per switch)

Thermal resistance - case to heatsink

(per module)

Junction temperature

Storage temperature range

Screw torque

Test Conditions

Continuous dissipation -

junction to case

Continuous dissipation -

junction to case

Mounting torque 5Nm

(with mounting grease)

Transistor

Diode

-

Mounting - M6

Electrical connections - M4

Electrical connections - M8

Min.

-

-

-

-

-

–40

-

-

-

Typ.

-

-

-

-

-

-

-

-

-

Max.

13

26

6

150

125

125

5

2

10

Units

˚C/kW

˚C/kW

˚C/kW

˚C/kW

˚C

˚C

˚C

Nm

Nm

Nm

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10

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DIM800NSM33-A000

ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(sat)

I

F

I

FM

V

F

C

ies

C

res

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

Diode forward current

Diode maximum forward current

Diode forward voltage

Input capacitance

Reverse transfer capacitance

Test Conditions

= 0V, VCE = V

V

GE

VGE = 0V, VCE = V

V

= ±20V, VCE = 0V

GE

= 80mA, VGE = V

I

C

CES

CES

, T

CE

VGE = 15V, IC = 800A

= 15V, IC = 800A, , T

V

GE

DC

= 1ms

t

p

= 800A

I

F

= 800A, T

I

F

= 25V, VGE = 0V, f = 1MHz

V

CE

= 25V, VGE = 0V, f = 1MHz

V

CE

= 125˚C

case

= 125˚C

case

case

= 125˚C

Min.

-

-

-

4.5

-

-

-

-

-

-

-

-

Typ.

-

-

-

5.5

3.2

4.0

800

1600

2.5

2.5

180

10

Max.

4

60

8

6.5

-

-

-

-

-

-

-

-

Units

mA

mA

µA

V

V

V

A

A

V

V

nF

nF

R

SC

L

M

INT

Data

Module inductance

Internal transistor resistance

Short circuit. I

SC

Note:

L* is the circuit inductance + L

-

-

Tj = 125˚C, VCC = 2500V,

tp ≤ 10µs, V

CE(max)

= V

– L*. di/dt

CES

-

-

I

1

I

2

-

11

0.135

5200

4400

nH

-

mΩ

-

-

A

A

IEC 60747-9

M

4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise

case

DIM800NSM33-A000

Symbol

t

d(off)

t

f

E

OFF

t

d(on)

t

r

E

ON

Q

Q

I

rr

E

rec

T

= 125˚C unless stated otherwise

case

Turn-off delay time

Fall time

Turn-off energy loss

Turn-on delay time

Rise time

Turn-on energy loss

Gate charge

g

Diode reverse recovery charge

rr

Diode reverse recovery current

Diode reverse recovery energy

Parameter

Test Conditions

= 800A

I

C

= ±15V

V

GE

V

= 1800V

CE

R

G(ON)

= R

C

ge

= 2.2Ω

G(OFF)

= 150nF

L ~ 100nH

IF = 800A, VCE = 1800V,

/dt = 4400A/µs

dI

F

Min.

-

-

-

-

-

-

-

-

-

-

Typ.

1600

200

850

500

300

1000

24

450

650

500

Max.

-

-

-

-

-

-

-

-

-

-

Units

ns

ns

mJ

ns

ns

mJ

µC

µC

A

mJ

Symbol

t

d(off)

t

f

E

OFF

t

d(on)

t

r

E

ON

Q

rr

I

rr

E

rec

Parameter

Turn-off delay time

Fall time

Turn-off energy loss

Turn-on delay time

Rise time

Turn-on energy loss

Diode reverse recovery charge

Diode reverse recovery current

Diode reverse recovery energy

Test Conditions

= 800A

I

C

= ±15V

V

GE

= 1800V

V

CE

R

G(ON)

= R

C

ge

= 2.2Ω

G(OFF)

= 150nF

L ~ 100nH

= 800A, VCE = 1800V,

I

F

/dt = 3000A/µs

dI

F

Min.

-

-

-

-

-

-

-

-

-

Typ.

1800

250

1000

500

300

1300

670

670

850

Max.

-

-

-

-

-

-

-

-

-

Units

ns

ns

mJ

ns

ns

mJ

µC

A

mJ

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/10

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DIM800NSM33-A000

TYPICAL CHARACTERISTICS

1600

Common emitter.

= 25˚C

T

case

1400

1200

1000

- (A)

C

800

600

Collector current, I

400

200

0

0

Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics

Collector-emitter voltage, Vce - (V)

VGE = 20V
V

= 15V

GE

V

= 12V

GE

V

= 10V

GE

1600

Common emitter.
T

= 125˚C

case

1400

1200

1000

- (A)

C

800

600

Collector current, I

400

200

VGE = 20V
VGE = 15V
VGE = 12V

654321

1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8

0

VGE = 10V

Collector-emitter voltage, Vce - (V)

1400

1200

1000

- (mJ)

sw

800

Conditions:
T

= 125˚C

case

= 2.2 Ohms

R

g

= 1800V

V

cc

C

= 150nF

ge

2000

1800

1600

1400

- (mJ)

1200

sw

Conditions:
T

= 125˚C

case

I

= 800A

C

V

= 1800V

cc

C

= 150nF

ge

1000

600

Switching energy, E

400

800

Switching energy, E

600

400

200

0

0 200 400 600 800 1000

Collector current, I

- (A)

c

E

on

E

off

E

rec

200

0

2 2.5 3 3.5 4 4.5 5

Gate resistance, Rg - (Ohms)

Fig. 5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance

E

on

E

off

E

rec

6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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DIM800NSM33-A000

1600

Tj = 25˚C

= 125˚C

T

1400

j

1200

1000

- (A)

F

800

600

Forward current, I

400

200

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Forward voltage, V

- (V)

F

Fig. 7 Diode typical forward characteristics

1800

1600

1400

Chip

1200

- (A)

C

1000

Module

800

600

Collector current, I

400

T

= 125˚C

case

200

V

= ±15V

ge

R

= 2.2Ω

g(min)

0

0 500 1000 1500 2000 2500 3000 3500

Collector emitter voltage, V

ce

- (V)

Fig. 8 Reverse bias safe operating area

1400

10000

1200

1000

1000

- (A)

rr

800

- (A)

C

100

t

p

= 1 ms

600

10

I

C(max)

400

Reverse recovery current, I

Collector Current, I

1

200

0

0 500 1000 1500 2000 2500 3000 3500

Reverse voltage, V

- (V)

R

Tvj = 125˚C, Tc = 80˚C

0

1 10 100 1000 10000

Collector emitter voltage, V

Fig. 9 Diode reverse bias safe operating area Fig. 10 Forward bias safe operating area

t

p

= 100µs

DC

t

p

ce

= 50µs

- (V)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/10

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DIM800NSM33-A000

100

- (°C/kW )

10

th (j-c)

1

Transient thermal impedance, Z

0.1

IGBT Ri (˚C/KW)
τ
Diode R

τ

(ms)

i

(˚C/KW)

i

(ms)

i

0.001 0.01 10.1
Pulse width, t

Fig. 11 Transient thermal impedance Fig. 12 DC current rating vs case temperature

1

0.3747

0.0876

0.7386

0.0843

- (s)

p

2

1.9652

3.7713

3.9115

3.7205

Transistor

3

2.7777

33.5693

5.5628

33.2138

Diode

4

8.4016

236.8023

16.8308

236.5275

10

1400

1200

- (A)

1000

C

800

600

DC collector current, I

400

200

0

0 20 40 60 80 100 120 140 160

Case temperature, T

case

- (˚C)

8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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DIM800NSM33-A000

PACKAGE DETAILS

For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.

48.8

10.35

24.5

2

E

- Aux Emitter

1

C

- Aux Collector

10.65

6x M4

62

20

1

C

20

E1

2

E

62

C1

65

57

G

E2

40

20

C2

43.5 18
57

6x Ø7

65

45.2
4x M8

38

28

31.5

5

140

Main Terminal screw plastic hole depth (M8) = 16.8 ± 0.3

Auxiliary and Gate pin plastic hole depth (M4) = 9± 0.3

Copper terminal thickness, Main Terminal pins = 1.5 ± 0.1

Copper terminal thickness, Auxiliary and Gate pin = 0.9 ± 0.1

Nominal weight: 1050g

Module outline type code: N

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/10

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DIM800NSM33-A000

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.

http://www.dynexsemi.com

e-mail: [e-mail]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

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All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

CUSTOMER SERVICE CENTRES

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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS5486-2 Issue No. 2.0 August 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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