Datasheet DIM400DCM17-A000 Datasheet (DYNEX)

DIM400DCM17-A000

DIM400DCM17-A000

IGBT Chopper Module

Replaces September 2001, version DS5490-1.1 DS5490-2.0 March 2002

FEATURES

■ 10µs Short Circuit Withstand

■ High Thermal Cycling Capability

■ Non Punch Through Silicon

■ Isolated MMC Base with AlN Substrates

APPLICATIONS

■ Power Supplies

■ Motor Controllers

■ Traction Drives

The Powerline range of high power modules includes half
bridge, chopper, dual and single switch configurations covering
voltages from 600V to 3300V and currents up to 2400A.

The DIM400DCM17-A000 is a 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
chopper module. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications. This device is optimised for traction drives and
other applications requiring high thermal cycling capability.

KEY PARAMETERS

1(E1)

3(C1)

1700V

2(C2)

4(E2)

V

CES

* (typ) 2.7V

V
I

C

I

C(PK)

CE(sat)

(max) 400A
(max) 800A

*(measured at the power busbars and not the auxiliary terminals)

5(E1)

6(G1)

1

)

7(C

Fig. 1 Chopper circuit diagram

The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.

ORDERING INFORMATION

Order As:

DIM400DCM17-A000

Note: When ordering, please use the whole part number.

Outline type code: D

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/11

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DIM400DCM17-A000

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

= 25˚C unless stated otherwise

T

case

Symbol

V

CES

V

GES

I

C

I

C(PK)

P

max

I2t

V

isol

Q

PD

Parameter

Collector-emitter voltage

Gate-emitter voltage

Continuous collector current

Peak collector current

Max. transistor power dissipation

2

Diode I

Diode I

t value (IGBT arm)

2

t value (Diode arm)

Isolation voltage - per module

Partial discharge - per module

Test Conditions

VGE = 0V

-

= 75˚C

T

case

1ms, T

T

case

V

R

= 105˚C

case

= 25˚C, Tj = 150˚C

= 0, tp = 10ms, Tvj = 125˚C

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

IEC1287. V1 = 1500V, V2 = 1100V, 50Hz RMS

Max.

1700

±20

400

800

3470

30

120

4000

10

Units

V

V

A

A

W

2

kA

2

kA

V

pC

s

s

2/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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THERMAL AND MECHANICAL RATINGS

Internal insulation material: AlN
Baseplate material: AlSiC
Creepage distance: 20mm
Clearance: 10mm
CTI (Critical Tracking Index): 175

DIM400DCM17-A000

Symbol

R

th(j-c)

R

th(j-c)

R

th(c-h)

T

j

T

stg

-

Parameter

Thermal resistance - transistor (per arm)

Thermal resistance - diode (IGBT arm)

Thermal resistance - diode (Diode arm)

Thermal resistance - case to heatsink

(per module)

Junction temperature

Storage temperature range

Screw torque

Test Conditions

Continuous dissipation -

junction to case

Continuous dissipation -

junction to case

Mounting torque 5Nm

(with mounting grease)

Transistor

Diode

-

Mounting - M6

Electrical connections - M4

Electrical connections - M8

Min.

-

-

-

-

-

-

–40

-

-

-

Typ.

-

-

-

-

-

-

-

-

-

-

Max.

36

80

40

8

150

125

125

5

2

10

Units

˚C/kW

˚C/kW

˚C/kW

˚C/kW

˚C

˚C

˚C

Nm

Nm

Nm

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/11

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DIM400DCM17-A000

ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(sat)

I

F

I

FM

†

V

F

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

†

Collector-emitter saturation voltage

Diode forward current

Diode maximum forward current

Diode forward voltage (IGBT arm)

Diode forward voltage (Diode arm)

Diode forward voltage (IGBT arm)

Diode forward voltage (Diode arm)

Test Conditions

= 0V, VCE = V

V

GE

VGE = 0V, VCE = V

V

= ±20V, VCE = 0V

GE

= 20mA, VGE = V

I

C

CES

CES

VGE = 15V, IC = 400A

= 15V, IC = 400A, , T

V

GE

DC

= 1ms

t

p

= 400A

I

F

I

= 400A, T

F

= 125˚C

case

CE

, T

= 125˚C

case

case

= 125˚C

Min.

-

-

-

4.5

-

-

-

-

-

-

-

-

Typ.

-

-

-

5.5

2.7

3.4

-

-

2.2

1.8

2.3

1.8

Max.

1

12

2

6.5

3.2

4.0

400

800

2.5

2.1

2.6

2.1

Units

mA

mA

µA

V

V

V

A

A

V

V

V

V

V

= 25V, VGE = 0V, f = 1MHz

CE

V

= 25V, VGE = 0V, f = 1MHz

CE

Tj = 125˚C, VCC = 1000V,

C

R

SC

C

ies

res

L

M

INT

Data

Input capacitance

Reverse transfer capacitance

Module inductance - per arm

Internal transistor resistance - per arm

Short circuit. I

SC

tp ≤ 10µs, V

IEC 60747-9

Note:

†

Measured at the power busbars and not the auxiliary terminals)

* L is the circuit inductance + L

M

CE(max)

= V

-

-

– L*. di/dt

CES

-

-

-

-

I

1

I

2

-

-

30

2.5

20

0.27

1850

1600

nF

-

nF

-

nH

-

mΩ

-

-

-

A

A

4/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise

case

DIM400DCM17-A000

Symbol

t

d(off)

t

f

E

OFF

t

d(on)

t

r

E

ON

Q

g

Q

rr

I

rr

E

rec

Parameter

Turn-off delay time

Fall time

Turn-off energy loss

Turn-on delay time

Rise time

Turn-on energy loss

Gate charge

Diode reverse recovery charge Diode arm

IGBT arm

Diode reverse recovery current Diode arm

IGBT arm

Diode reverse recovery energy Diode arm

Test Conditions

= 400A

I

C

= ±15V

V

GE

= 900V

V

CE

= R

R

G(ON)

G(OFF)

L ~ 100nH

= 400A,

I

F

= 50% V

V

R

/dt = 2000A/µs

dI

F

= 4.7Ω

,

CES

Min.

-

-

-

-

-

-

-

-

-

-

-

-

Typ.

1150

100

120

250

250

150

4.5

250

100

530

230

160

Max.

-

-

-

-

-

-

-

-

-

-

-

-

Units

ns

ns

mJ

ns

ns

mJ

µC

µC

µC

A

A

mJ

IGBT arm

-

70

mJ

-

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/11

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DIM400DCM17-A000

ELECTRICAL CHARACTERISTICS

T

= 125˚C unless stated otherwise

case

Symbol

t

d(off)

t

f

E

OFF

t

d(on)

t

r

E

ON

Q

rr

I

rr

E

rec

Parameter

Turn-off delay time

Fall time

Turn-off energy loss

Turn-on delay time

Rise time

Turn-on energy loss

Diode reverse recovery charge Diode arm

IGBT arm

Diode reverse recovery current Diode arm

IGBT arm

Diode reverse recovery energy Diode arm

IGBT arm

Test Conditions

= 400A

I

C

= ±15V

V

GE

V

= 900V

CE

= R

R

G(ON)

G(OFF)

L ~ 100nH

IF = 400A,

= 50% V

V

R

/dt = 2000A/µs

dI

F

= 4.7Ω

,

CES

Min.

-

-

-

-

-

-

-

-

-

-

-

-

Typ.

1400

130

180

400

250

170

425

170

600

270

250

100

Max.

-

-

-

-

-

-

-

-

-

-

-

-

Units

ns

ns

mJ

ns

ns

mJ

µC

µC

A

A

mJ

mJ

6/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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TYPICAL CHARACTERISTICS

DIM400DCM17-A000

900

Common emitter.
T

= 25˚C

case

800

Vce is measured at power busbars
and not the auxiliary terminals

700

600

- (A)

c

500

400

300

Collector current, I

200

VGE = 20V

100

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

Collector-emitter voltage, V

ce

- (V)

Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics

15V
12V
10V

900

Common emitter.

= 125˚C

T

case

800

Vce is measured at power busbars
and not the auxiliary terminals

700

600

- (A)

c

500

400

300

Collector current, I

200

VGE = 20V

100

0

15V
12V
10V

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6

Collector-emitter voltage, V

ce

- (V)

200

175

150

125

100

Conditions:

= 900V

V

ce

T

= 125°C

c

= 4.7Ω

R

g

400

300

- (mJ)

sw

200

Conditions:
V

= 900V

ce

= 400A

I

C

= 125°C

T

c

75

Switching energy - (mJ)

50

25

0

0 100 200 300 400 500

Collector current, I

- (A)

C

E

off

E

on

E

rec

Switching energy, E

100

0

0481216

Gate Resistance, R

- (Ohms)

g

Fig. 5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance

E

off

E

on

E

rec

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/11

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DIM400DCM17-A000

800

700

600

500

- (A)

F

400

300

Forward current, I

200

100

Arm 3-1: Tj = 25˚C
Arm 3-1: T
Arm 2-4: T
Arm 2-4: T

VF is measured at power busbars
and not the auxiliary terminals

0

0

0.5 1.0 1.5

= 125˚C

j

= 25˚C

j

= 125˚C

j

Forward voltage, V

Fig. 7 Diode typical forward characteristics

2.0

2.5 3.0 3.5

- (V)

F

900

800

Chip

700

Module

600

- (A)

C

500

400

300

Collector current, I

200

Conditions:

= 125˚C,

T

100

case

= 15V,

V

ge

R

= 4.7ohms

g(off)

0

0 200 400 600 800 1000 1200 1400 1600 1800

Collector emitter voltage, Vce - (V)

Fig. 8 Reverse bias safe operating area

1000

550

Freewheel Diode

500

450

400

- (A)

rr

350

Antiparallel Diode

300

100

- (A)

C

10

I

C(max)

DC

250

200

Collector current, I

150

Reverse recovery current, I

1

100

50

Tj = 125˚C

0

0 400 800

Reverse voltage, VR - (V)

1200

1600

2000

0.1

= 125˚C, T

T

vj

case

= 68˚C

1 10 100 1000 10000

Collector-emitter voltage, V

Fig. 9 Diode reverse bias safe operating area Fig. 10 Forward bias safe operating area

ce

- (V)

t

= 50µs

p

= 100µs

t

p

= 1 ms

t

p

8/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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DIM400DCM17-A000

100

- (°C/kW )

th (j-c)

10

Transient thermal impedance, Z

1

0.001 0.01 10.1
Pulse width, t

IGBT

Antiparallel Diode

Freewheel Diode

(˚C/KW)

R

i

τ

(ms)

i

R

(˚C/KW)

i

τ

(ms)

i

R

(˚C/KW)

i

τ

(ms)

i

Fig. 11 Transient thermal impedance Fig. 12 DC current rating vs case temperature

- (ms)

p

1

0.8782

0.045

3.1224

0.0063516

1.5612

0.0063516

Antiparallel Diode

Freewheel Diode

Transistor

2

6.3874

2.8869

11.4852

1.4746

5.7426

1.4746

3

8.293

21.7141

13.998

13.9664

6.999

13.9664

10

4

20.4712

152.6381

51.2136

111.7517

25.6068

111.7517

1000

Antiparallel Diode

900

800

700

Freewheel Diode

- (A)

F

600

500

400

300

DC forward current, I

200

100

0

0 20 40 60 80 100 120 140 160

Case temperature, T

case

- (˚C)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/11

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DIM400DCM17-A000

PACKAGE DETAILS

For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

Nominal weight: 1050g

Module outine type code: D

10/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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DIM400DCM17-A000

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.

http://www.dynexsemi.com

e-mail: [e-mail]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

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All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

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© Dynex Semiconductor 2002 Publication No. DS5490-2 Issue No. 2.0 March 2002
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 11/11

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