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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistors D45VH Series
DESCRIPTION
·Low Saturation Voltage
·Fast Switching Speed
·Complement to Type D44VH Series
APPLICATIONS
·Designed for high-speed switching applications, such as
switching regulators and high frequency inverters. They are
also well-suited for drivers for high power switching circuits.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
=25℃)
a
D45VH 1 -50
V
CEV
V
CEO
V
EBO
I
C
I
CM
P
C
T
T
stg
Collector-Emitter
Voltage
Collector-Emitter
Voltage
Emitter-Base Voltage -5 V
Collector Current-Continuous -15 A
Collector Current-Peak -20 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150 ℃
j
Storage Temperature Range -55~150 ℃
D45VH 4 -70
V
D45VH 7 -80
D45VH 10 -100
D45VH 1 -30
D45VH 4 -45
V
D45VH 7 -60
D45VH 10 -80
83 W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
R
th j-a
isc Website：www.iscsemi.cn
Thermal Resistance, Junction to Case 1.5 ℃/W
Thermal Resistance,Junction to Ambient 62.5 ℃/W
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistors D45VH Series
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
D45VH 1 -30
V
CEO(SUS)
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
I
CEV
I
EBO
h
FE-1
h
FE-2
C
f
(sat)
OB
T
Collector-Emitter
Sustaining Voltage
D45VH 4 -45
= -25mA ;IB= 0 B
I
C
V
D45VH 7 -60
D45VH 10
-80
Collector-Emitter Saturation Voltage IC= -8A ;IB= -0.8A -1.0 V
Collector-Emitter Saturation Voltage IC= -15A ;IB= -3A;TC=100℃ -1.5 V
Base-Emitter Saturation Voltage
Collector Cutoff Current
= -8A ;IB= -0.8A
C
IC= -8A ;IB= -0.8A;TC=100℃
VCE=RatedVCE;V
V
=RatedVCE;V
CE
=-4V
BE(
)
off
=-4V;TC=100℃
BE(
)
off
-1.0
-1.5
-10
-100
V
μA
I
Emitter Cutoff Current VEB= -7V; IC= 0 -10 μA
DC Current Gain IC= -2A ; VCE= -1V 35
DC Current Gain IC= -4A ; VCE= -1V 20
Output Capacitance
Current-Gain—Bandwidth Product
I
= 0;VCB= -10V,f
E
I
= 0.1A;VCE= -10V;f
C
= 1.0MHz
test
test
= 20MHz
275 pF
50 MHz
Switching Times
t
d
t
r
t
s
t
f
Delay Time 50 ns
Rise Time 250 ns
Storage Time 700 ns
Fall Time
isc Website：www.iscsemi.cn
= -8A; IB1= -IB2= -0.8A
I
C
V
= -20V
CC
90 ns
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