Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors D44VH Series
DESCRIPTION
·Low Saturation Voltage
·Fast Switching Speed
·Complement to Type D45VH Series
APPLICATIONS
·Designed for high-speed switching applications, such as
switching regulators and high frequency inverters. They are
also well-suited for drivers for high power switching circuits.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
=25℃)
a
D44VH 1 50
V
CEV
V
CEO
V
EBO
I
C
I
CM
P
C
T
T
stg
Collector-Emitter
Voltage
Collector-Emitter
Voltage
Emitter-Base Voltage 5 V
Collector Current-Continuous 15 A
Collector Current-Peak 20 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150 ℃
j
Storage Temperature Range -55~150 ℃
D44VH 4 70
V
D44VH 7 80
D44VH 10 100
D44VH 1 30
D44VH 4 45
V
D44VH 7 60
D44VH 10 80
83 W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
R
th j-a
isc Website：www.iscsemi.cn
Thermal Resistance, Junction to Case 1.5 ℃/W
Thermal Resistance,Junction to Ambient 62.5 ℃/W
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors D44VH Series
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
D44VH 1 30
V
CEO(SUS)
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
I
CEV
I
EBO
h
FE-1
h
FE-2
C
f
(sat)
OB
T
Collector-Emitter
Sustaining Voltage
D44VH 4 45
= 25mA ;IB= 0 B
I
C
V
D44VH 7 60
D44VH 10
80
Collector-Emitter Saturation Voltage IC= 8A ;IB= 0.4A 0.4 V
Collector-Emitter Saturation Voltage IC= 15A ;IB= 3A;TC=100℃ 0.8 V
Base-Emitter Saturation Voltage
Collector Cutoff Current
= 8A ;IB= 0.4A
C
IC= 8A ;IB= 0.4A;TC=100℃
VCE=RatedVCE;V
V
=RatedVCE;V
CE
=4V
BE(
)
off
=4V;TC=100℃
BE(
)
off
1.2
1.1
10
100
V
μA
I
Emitter Cutoff Current VEB= 7V; IC= 0 10 μA
DC Current Gain IC= 2A ; VCE= 1V 35
DC Current Gain IC= 4A ; VCE= 1V 20
Output Capacitance
Current-Gain—Bandwidth Product
I
= 0;VCB= 10V,f
E
I
= 0.1A;VCE= 10V;f
C
= 1.0MHz
test
test
= 20MHz
120 pF
50 MHz
Switching Times
t
d
t
r
t
s
t
f
Delay Time 50 ns
Rise Time 250 ns
Storage Time 700 ns
Fall Time
isc Website：www.iscsemi.cn
= 8A; IB1= -IB2= 0.8A
I
C
V
= 20V
CC
90 ns
Loading...