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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors D44TD3/4/5
DESCRIPTION
·Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Designed for switching regulators, high resolution deflection
circuits, inverters and motor drivers.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= 300V(Min)- D44TD3
= 350V(Min)- D44TD4
= 400V(Min)- D44TD5
=25℃)
a
D44TD3 400
V
CEV
V
CEO
V
EBO
I
C
I
CM
P
C
T
J
T
stg
Collector-Emitter
Voltage
Collector-Emitter
Voltage
Emitter-Base Voltage 5 V
Collector Current-Continuous 4 A
Collector Current-Peak 8 A
Collector Power Dissipation
@ TC=25℃
Junction Temperature 150
Storage Temperature Range -65~150
D44TD4 500
D44TD5 600
D44TD3 300
D44TD4 350
D44TD5 400
50 W
V
V
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance, Junction to Case 1.56
℃/W
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors D44TD3/4/5
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
D44TD3 300
V
CEO(SUS)
V
CE(
V
BE(
I
CEV
I
EBO
h
Collector-Emitter
Sustaining Voltage
D44TD4 350
D44TD5
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.0 V
)
sat
Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.5 V
)
sat
D44TD3
Collector
Cutoff Current
D44TD4
D44TD5
I
= 0.1A ;IB= 0 B
C
= 400V;V
V
CE
= 500V;V
V
CE
VCE= 600V;V
BE(
BE(
BE(
= 1.5V
)
off
= 1.5V
)
off
= 1.5V
)
off
400
V
0.1
0.1
0.1
mA
Emitter Cutoff Current VEB= 6V; IC=0 1.0 mA
FE
DC Current Gain IC= 2A ; VCE= 3V 5
isc Website：www.iscsemi.cn
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